Electronic structure and metallization of MnPS3 under extreme pressure

Yuqiang Li,Yuhong Li,Qiang Zhang,Ningning Su,Jinlu Sun,Ningru Xiao,Yang Liu,Yuyao Liu,Hongwei Liu,Lixia Zhao
DOI: https://doi.org/10.1016/j.apmt.2024.102129
IF: 8.663
2024-04-01
Applied Materials Today
Abstract:The structural and electrical transport properties of MnPS3 are studied under extreme pressure up to 55 GPa using first-principles calculations and in situ high-pressure electrical experiments. The reversible structural phase transitions are observed at around 10 GPa and 28 GPa by enthalpy calculation, both reflected in the lattice constants mutation and cell volume collapse. The layer sliding of atoms is revealed using the P2-P1′ atom pair induced by phase transitions. The discontinuous electrical parameters also display reversible phase transition at approximately 29.2 GPa, where the p-type semiconductor to n-type transition is found due to the positive and negative inversion of Hall coefficient. The metallization transition is determined by the energy-band closure, in good agreement with the enhancing metallic behavior experimentally evidenced above 29.5 GPa. Exploring the pressure-induced mechanism concerning structural and transport behaviors of MnPS3-type sheds light on its application in two-dimensional (2D) spintronic devices under extreme conditions.
materials science, multidisciplinary
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