Terahertz Sensing of Å‐scale Thin Dielectric Film Via Electron Tunnelling

Matej Sebek,Tobias Olaf Buchmann,Peter Uhd Jepsen,Simon Jappe Lange
DOI: https://doi.org/10.1002/adom.202302841
IF: 9
2024-03-29
Advanced Optical Materials
Abstract:Sebek et al. tackled challenges in detecting ultrathin dielectric films within the terahertz (THz) frequency range. Their approach, utilizing double‐barrier Fowler‐Nordheim tunnelling, significantly enhances sensitivity to minute changes in thickness. This advancement not only outperforms traditional THz‐based methods, but also promises enhanced sensing capabilities in THz technology for applications in material development and microelectronics quality control. Precise sensing of ultrathin dielectric films is paramount in various fields including nanoscale dielectric characterization, advanced material development, and quality control in microelectronics manufacturing. However, achieving this with conventional detection techniques within the terahertz (THz) frequency range has remained challenging due to their limited sensitivity and resolution. In this study, a novel approach is reported that utilizes Fowler‐Nordheim (FN) tunnelling at a metal‐dielectric junction, which drastically improves the sensitivity to changes in dielectric film thickness down to the Angstrom scale. Through a detailed analysis of both experimental and simulated data, it is demonstrated that the FN tunnelling‐based THz sensing technique exhibits exceptional sensitivity. This finding not only overcomes the limitations of traditional detection techniques, but also paves the way for novel ultrathin film sensing capabilities in the rapidly advancing field of THz technology.
materials science, multidisciplinary,optics
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