Raman scattering from coupled plasmon-LO-phonon modes in n-type AlxGa1-xAs.

Yuasa,Naritsuka,Mannoh,Shinozaki,Yamanaka,Nomura,Mihara,Ishii

DOI: https://doi.org/10.1103/PHYSREVB.33.1222

1986-01-15

Abstract:Raman scattering by coupled plasmon--LO-phonon modes has been studied in direct-band-gap n-type ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As epitaxial layers with various carrier concentrations. Raman spectra from (100) surfaces of the layers exhibit three branches of the coupled modes whose frequencies and dampings depend on both the carrier concentration and the alloy composition. The dispersion relations of the coupled modes have also been investigated with use of different lines of the excitation lasers, and the wave-vector dependence of the frequencies and dampings have been confirmed. The experimental data agree well with the results calculated by the dielectric-constant method, taking into account the ``two-mode'' behavior with two sets of the optical phonons in ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As. In addition, the carrier-concentration dependence of the coupled mode strength has been calculated with use of the phonon content as a measure, and compared with the observed one.