Hot carrier transfer from plasmon decay in Ag20at H-Si(111) surface: real-time TDDFT simulation in Wannier gauge

John L Bost,Christopher Shepard,Yosuke Kanai
DOI: https://doi.org/10.1088/1361-648X/ad8b8e
2024-11-11
Abstract:Plasmon decay is believed to play an essential role in inducing hot carrier transfer at the interfaces between plasmonic nanoparticles and semiconductor surfaces. In this work, we employ real-time time-dependent density functional theory (RT-TDDFT) simulation in the Wannier gauge to gain quantum-mechanical insights into the nonlinear dynamics of the plasmon decay in the Ag20nanoparticle at a semiconductor surface. The first-principles simulations show that the plasmon decay is more than two times faster when the Ag20nanoparticle is adsorbed on a hydrogen-terminated Si(111) surface, taking place within 100 femtoseconds of the plasmon excitation. Hot carrier transfer across the interface is observed as the plasmon decay takes place, and nearly 30% of holes are generated deep in the valence band of the semiconductor surface. The use of Wannier gauge in RT-TDDFT simulation is particularly convenient for gaining quantum-mechanical insights into non-equilibrium electron dynamics in complex heterogeneous systems.
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