Nanoscale Erp Islands On Inp [001] Substrate Grown By Organometallic Vapor Phase Epitaxy

L. Bolotov,T. Tsuchiya,T. Ito,Y. Fujiwara,Y. Takeda,A. Nakamura
DOI: https://doi.org/10.1109/ICIPRM.1998.712422
1998-05-11
Abstract:We report an observation of nanoscale ErP islands formed on InP(001) during the Er-exposure in organometallic vapor phase epitaxial growth by means of atomic force (AFM) and scanning tunneling microscopies (STM). Different features of surface morphologies are observed depending on the growth temperature and ErP coverage. The generation of the misfit dislocation array along the [110] direction leads to anisotropic strain relaxation originating from anisotropy of the atomic bonds at the interface. Surface electronic structure of the ErP islands have been investigated by means of scanning tunneling spectroscopy (STS)
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