Nanosecond-Pulsed, Dual-Wavelength Passively Q-Switched c-Cut Nd:YVO$_{\bf 4}$ Laser Using a Few-Layer Bi$_{\bf 2}$ Se$_{\bf 3}$Saturable Absorber

F. Jia,Hao Chen,Pei Liu,Yizhong Huang,Zhengqian Luo
DOI: https://doi.org/10.1109/JSTQE.2014.2346612
IF: 4.9
IEEE Journal of Selected Topics in Quantum Electronics
Abstract:We demonstrate for the first time, to the best of our knowledge, a dual-wavelength nanosecond-pulsed Nd:YVO4 laser passively Q-switched by a topological-insulator (TI) Bi2Se3 saturable absorber (SA). The few-layer Bi2Se3 nanosheets are fabricated by the liquid-phase exfoliation technique, and are then coated on the output mirror of a diode-pumped c-cut Nd:YVO4 laser. The synchronized Q-switching operation at 1066.6 and 1066.8 nm is successfully achieved. The Q-switched repetition rate is tunable in a wide range of 1-135 kHz, and the maximum pulse energy is obtained to be 0.56 μJ (corresponding to the peak power of 1.87 W). The obtained pulse width can be as narrow as 250 ns, which is the shortest one from the reported TI-based Q-switched lasers.
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