A nitride-isolated molybdenum-polysilicon gate electrode for MOS VLSI circuits

T. Ito,H. Horie,T. Fukano,H. Ishikawa
DOI: https://doi.org/10.1109/T-ED.1986.22513
IF: 3.1
1986-04-01
IEEE Transactions on Electron Devices
Abstract:A new gate electrode structure is demonstrated. The low-resistive gate electrode consists of a triple layer of molybdenum and polysilicon films isolated with an ultrathin silicon-nitride film, namely MTP-metal/tunneling nitride/polysilicon. The tunneling nitride, which is grown by direct thermal nitridation of silicon, avoids silicidation of molybdenum and diffusion of impurities resulting in a thin SiO2film of good quality. Characteristics of discrete FET's can be designed like those of conventional silicon-gate devices. No instability due to the tun, neling nitride has been observed in both dc and high-speed switching operations. The technique is useful for MOS VLSI circuits.
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