Buried planar and channel waveguides in sapphire and Ti:sapphire by proton implantation

L. Laversenne,P. Hoffmann,M. Pollnau,P. Moretti
DOI: https://doi.org/10.1364/IPR.2004.IFF2
2004-05-16
Abstract:Buried, stacked planar and channel waveguides in sapphire and Ti:sapphire are fabricated by proton implantation. Flexibility of the fabrication technique and good control over the implantation parameters result in variable design and excellent light confinement.
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