Systems of care, featherless bipeds, and the measure of all things.

S. Hodges,Kathleen Ferreira,Nathaniel Israel,Jessica Mazza

DOI: https://doi.org/10.1016/j.evalprogplan.2007.11.002

IF: 1.886

2010-02-01

Evaluation and Program Planning

Abstract:

What problem does this paper attempt to address?

A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He,Yiming Pan,Haiyan Nan,Shuai Gu,Ziyi Yang,Bing Wu,Xiaoguang Luo,Bingchen Xu,Yuhan Zhang,Yun Li,Zhenhua Ni,Baigeng Wang,Jia Zhu,Yang Chai,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1511.02361

2015-11-07

Abstract:van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

Mesoscale and Nanoscale Physics,Materials Science
Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Wenchao Chen,Jean-Pierre Leburton,Wen-Yan Yin,Erping Li

DOI: https://doi.org/10.1109/ted.2018.2866505

2018-01-01

Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.
Efficient Carrier Separation in Graphitic Zinc Oxide and Blue Phosphorus van der Waals Heterostructure

Xianghong Niu,Yunhai Li,Huabing Shu,Xiaojing Yao,Jinlan Wang

DOI: https://doi.org/10.1021/acs.jpcc.6b12613

2017-01-01

Abstract:Efficient carrier separation is the key to the application of photoelectric device. However, photogenerated electron hole pairs in simplex semiconductors generally occupy the same regions spatially and are easy to recombine. Here we design a graphitic zinc-oxide-based (g-ZnO) intrinsic type-II heterostructure, g-ZnO/blue phosphorus (BP), based on first-principles calculations. The type-II band offsets and large built-in electric field ensure the photogenerated electrons easily migrating from g-ZnO to BP, which significantly enhances the separation of electron-hole pairs. Improved optical absorption is also observed in the heterostructure. Furthermore, the perpendicular external electric field can greatly modulate band edges and achieve a direct band gap at Gamma point, which provides further promotion in the separation of carriers.
Enzyme mimics based upon supramolecular coordination chemistry.

Michael J. Wiester,Pirmin A. Ulmann,C. Mirkin

DOI: https://doi.org/10.1002/anie.201000380

2011-01-03

Angewandte Chemie

Abstract:Recent advances in supramolecular coordination chemistry have allowed chemists to synthesize macromolecular complexes that exhibit various properties intrinsic to enzymes. This Review focuses on structures inspired by properties and functions observed in enzymes rather than precise models of enzyme active sites. These structures are synthesized using convergent, modular, and high-yielding coordination-chemistry-based methods, which allow one to tailor the size, shape, and properties of the resulting complexes. Many of the structures discussed exhibit reactivity and specificity reminiscent of natural systems, and some of them have functions that exceed the natural systems which provided the inspiration for initially making them.
Insights into Photoinduced Carrier Dynamics and Hydrogen Evolution Reaction of Organic PM6/PCBM Heterojunctions

Xiao-Ying Xie,Xiang-Yang Liu,Ganglong Cui,Wei-hai Fang

DOI: https://doi.org/10.1039/d2ta07170c

IF: 11.9

2022-11-10

Journal of Materials Chemistry A

Abstract:Efficient spatial separation of photogenerated charge carriers across donor/acceptor interfaces has stimulated intense research efforts in photocatalysis fields ascribed to distinctive electronic structure properties of related constituents. Leveraging electronic structure calculations in combination with ab initio-based non-adiabatic carrier dynamics simulations, this study reports ultrafast electron transfer and suppressed nonradiative electron-hole recombination at the interface of PM6/PCBM organic semiconductor heterojunctions, which leads to long-lived charges taking part in hydrogen evolution. The photoinduced dynamical processes are dominantly influenced by energy gaps and non-adiabatic couplings between frontier donor and acceptor states. In addition, hydrogen evolution sites at PM6/PCBM heterojunctions are unveiled by means of first-principles calculations, which suggest that the reaction activity heavily depends on H-adsorbed sites. The activity on the C atoms at the junction of three benzene rings (C666) is much lower than that on the C atoms connected with one pentagon ring and two benzene rings (C665). Nevertheless, the former can be significantly improved via pre-hydrogenating the adjacent C665 atom. This work reveals new photophysical and photochemical properties of PM6/PCBM heterojunctions in detail and provides useful perspectives for performance improvements of photocatalytic materials based on organic donor-acceptor heterojunctions.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Efficient Exciton Dissociation in Heterojunction Interfaces Realizing Enhanced Photoresponsive Performance

Wei Shao,Li Wang,Hui Wang,Zhi Zhao,Xiaodong Zhang,Shenlong Jiang,Shichuan Chen,Xianshun Sun,Qun Zhang,Yi Xie

DOI: https://doi.org/10.1021/acs.jpclett.9b01020

2019-01-01

Abstract:Excitonic effects, originating from the interactions between charge carriers, influence and even dominate the photoresponsive properties of low-dimensional materials. For efficient carrier-related photoresponse, it is imperative to develop appropriate strategies to promote exciton dissociation in these systems. Herein, by taking black phosphorus nanosheets/poly(3-hexylthiophene) (BP/P3HT) as a prototype, we propose that the construction of a heterojunction with a certain band alignment and transport property can facilitate exciton dissociation into free carriers. Analyses on band structures and carrier kinetics confirmed the directional injection of holes from BP to P3HT and the excellent transport property associated with the injected holes in P3HT. Benefiting from these features, the BP/P3HT heterojunction yielded a high photocurrent on-off ratio of ∼18.3, contrasting with the much lower values in pristine BP nanosheets and P3HT. This work provides a feasible scenario for exciton regulation via constructing a heterojunction and establishes an in-depth understanding of exciton dissociation in photoresponsive properties.
The dean's letter of recommendation and resident performance.

B. Stanton,A. Burstein,J. Kobos,S. Loucks

DOI: https://doi.org/10.1097/00001888-197910000-00009

1979-10-01

Journal of Medical Education

Abstract:
Disparity of carriers in polarized heterostructures: A first-principles study

Zhusen Zhang,Dawei Deng,Qing-Xia Ge,Zhen-Kun Tang,Nicola Seriani,Wen-Jin Yin,Ralph Gebauer

DOI: https://doi.org/10.1103/physrevapplied.22.034064

IF: 4.6

2024-09-27

Physical Review Applied

Abstract:Long charge-carrier lifetimes are of great importance in designing highly efficient photocatalytic materials. In this work, we investigate the electronic structure and charge-carrier behavior of GaSe/WSSe heterostructures using first-principles calculations. Different types of heterostructures with similar binding energies can be formed based on the polarization directions and stacking patterns. It is found that type-II band alignments, which are advantageous for water-splitting applications, can be found in some of the examined heterostructures. An intrinsic electric field exists at the interface of such double layers, promoting the separation of electron-hole pairs. The heterostructures show extremely high electron carrier mobilities and a large disparity of electron versus hole mobilities, with μn/μp in the range of 39–52, inhibiting the recombination of electron-hole pairs and prolonging the carrier lifetimes. This unique behavior can be attributed to the interplay of intrinsic interface electric field, charge redistribution, effective carrier mass, and deformation potential. Our results reveal the potential of GaSe/WSSe heterostructures as promising photocatalysts for overall water splitting with long carrier lifetimes. https://doi.org/10.1103/PhysRevApplied.22.034064 © 2024 American Physical Society

physics, applied
The effects of intercalated environmental gas molecules on the carrier dynamics in WSe2/WS2 heterostructures

Yanxue Zhang,Hongsheng Liu,Yanyan Zhao,Jiaqi Lin,Yizhen Bai,Jijun Zhao,Junfeng Gao

DOI: https://doi.org/10.1039/d3mh00420a

IF: 13.3

2023-04-06

Materials Horizons

Abstract:Effective tuning the carrier dynamics in two-dimensional (2D) materials is significant for multi-scene device applications. Using first-principles and ab-initio nonadiabatic molecular dynamics calculations, the kinetic of O2, H2O and N2 intercalation into 2D WSe2/WS2 van der Waals heterostructures and its effect on carrier dynamics have been comprehensively explored. It is found that O2 molecule prefers to dissociate into atomic O atoms spontaneously after intercalation of WSe2/WS2 heterostructures, whereas H2O and N2 molecule remains molecular formation. O2 intercalation greatly speeds up the electron separation process, while H2O intercalation largely speeds up the hole separation process. The lifetime of excited carriers can be prolonged by O2 or H2O or N2 intercalations. These intriguing phenomena can be attributed to the effect of interlayer coupling, and the underlying physical mechanism for tuning the carrier dynamics has been fully discussed. Our results provide useful guidance for experimental design of 2D heterostructures for optoelectronic applications in photocatalysts and solar energy cell.

materials science, multidisciplinary,chemistry
Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction

Liyun Zhao,Xuewen Wang,Zhepeng Zhang,Pengfei Yang,Jie Chen,Yanqi Chen,Hao Wang,Qiuyu Shang,Yuyang Zhang,Yanfeng Zhang,Xinfeng Liu,Jiancai Leng,Zheng Liu,Qing Zhang

DOI: https://doi.org/10.1002/aelm.201700373

IF: 6.2

2017-01-01

Advanced Electronic Materials

Abstract:Van der Waals heterojunctions of 2D layered semiconductors and nonlayered technological important II-V semiconductors provide unprecedented opportunities to engineer exciton and carrier dynamics in 2D optoelectronic devices. However, fabrication of such artificial heterojunctions with type-II band alignment structure and realization of interlayer excitons is challenging. Here, CdS-MoS2 type-II heterojunctions vertically stacked with few layered MoS2 and ultrathin CdS film are reported. Steady-state spectroscopy and time-resolved photoluminescence spectroscopy are used to study exciton and carrier dynamics in these heterojunctions. The surface states of the ultrathin CdS film caused by dangling bonds mediate interlayer exciton emission located at 753 nm in a CdS-bilayer MoS2 heterojunction via charge transition between the MoS2 indirect band and the CdS valence band. As a contrast, the surface states of CdS impede the recombination of interlayer excitons in a CdS-monolayer MoS2 heterojunction. These results are helpful for development of high-performance ultrathin optoelectronic and energy devices including light emission diodes, solar cells, and photodetectors.
Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Junhao Dong,Zhanggui Wu,Changan HuangFu,Yi Su,Xiaoyan Zheng,Wensheng Wu,Baisheng Sa,Jiajie Pei,Liying Jiao,Jingying Zheng,Hongbing Zhan,Qianting Wang

DOI: https://doi.org/10.1021/acsnano.4c11792

IF: 17.1

2024-01-01

ACS Nano

Abstract:Developing alternative two-dimensional (2D) metallic/semiconducting (M/S) van der Waals heterostructures (vdWHs) along with an understanding of interfacial photocarrier behavior is crucial for designing high-performance optoelectronic devices. Here, we comprehensively explored the photophysical model of photocarrier generation and interfacial transfer in as-grown 2D 1T'/2H MoS2 vdWHs using various spectroscopic characterizations. We demonstrated the transitions of activated photocarrier transfer trajectories by tuning the pump photon energies across the 2H MoS2 bandgap. The importance of confined bilayer transfer systems and strong interlayer coupling at vdW interfaces for transfer efficiency was elucidated. Additionally, the fluorophlogopite substrate was found to be an external method for regulating photocarrier generation in individual 2H layers through the p-doping effect at the substrate-2H layer interfaces, and this influence was alleviated after introducing the 2H-1T' vdW interface. Particularly, 1T' MoS2 as a broadband hot carrier absorber enabled the ultrafast (∼133 fs) injection and extraction of energetic hot carriers into the 2H layer via a photothermionic emission mechanism, achieving a high efficiency of ∼41% under 900 nm photoexcitation at room temperature. Our work offers fundamental insights into the complex interfacial carrier photophysics in 2D M/S vdWHs, providing a way of constructing advanced multifunctional devices by using these emerging materials as active components and interface engineering.
Mechanisms of Ultrafast Charge Separation in a PTB7/Monolayer MoS2 van der Waals Heterojunction

Chengmei Zhong,Vinod K. Sangwan,Chen Wang,Hadallia Bergeron,Mark C. Hersam,Emily A. Weiss

DOI: https://doi.org/10.48550/arXiv.1805.09504

2018-05-24

Materials Science

Abstract:Mixed-dimensional van der Waals heterojunctions comprising polymer and twodimensional (2D) semiconductors have many characteristics of an ideal charge separation interface for optoelectronic and photonic applications. However, the photoelectron dynamics at polymer- 2D semiconductor heterojunction interfaces are currently not sufficiently understood to guide the optimization of devices for these applications. This manuscript is a report of a systematic exploration of the time-dependent photophysical processes that occur upon photoexcitation of a type-II heterojunction between the polymer PTB7 and monolayer MoS2. In particular, photoinduced electron transfer from PTB7 to electronically hot states of MoS2 occurs in less than 250 fs. This process is followed by a slower (1-5 ps) exciton diffusion-limited electron transfer from PTB7 to MoS2 with a yield of 58%, and a sub-3-ps photoinduced hole transfer from MoS2 to PTB7. The equilibrium between excitons and polaron pairs in PTB7 determines the charge separation yield, whereas the 3-4 ns lifetime of photogenerated carriers is limited by MoS2 defects. Overall, this work elucidates the mechanisms of ultrafast charge carrier dynamics at PTB7-MoS2 interfaces, which will inform ongoing efforts to exploit polymer-2D semiconductor heterojunctions for photovoltaic and photodetector applications.
Long-range Transport and Ultrafast Interfacial Charge Transfer in Perovskite/monolayer Semiconductor Heterostructure for Enhanced Light Absorption and Photocarrier Lifetime

Chi Zhang,Guochao Lu,Yao Zhang,Zhishan Fang,Haiping He,Haiming Zhu

DOI: https://doi.org/10.1063/5.0097617

IF: 4.304

2022-01-01

The Journal of Chemical Physics

Abstract:Atomically thin two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for optoelectronic applications, including photodetectors, phototransistors, and spintronic devices. However, the applications of TMD-based optoelectronic devices are severely restricted by their weak light absorption and short exciton lifetime due to their atomically thin nature and strong excitonic effect. To simultaneously enhance the light absorption and photocarrier lifetime of monolayer semiconductors, here, we report 3D/2D perovskite/TMD type II heterostructures by coupling solution processed highly smooth and ligand free CsPbBr3 film with MoS2 and WS2 monolayers. By time-resolved spectroscopy, we show interfacial hole transfer from MoS2 (WS2) to the perovskite layer occurs in an ultrafast time scale (100 and 350 fs) and interfacial electron transfer from ultrathin CsPbBr3 to MoS2 (WS2) in ∼3 (9) ps, forming a long-lived charge separation with a lifetime of >20 ns. With increasing CsPbBr3 thickness, the electron transfer rate from CsPbBr3 to TMD is slower, but the efficiency remains to be near-unity due to coupled long-range diffusion and ultrafast interfacial electron transfer. This study indicates that coupling solution processed lead halide perovskites with strong light absorption and long carrier diffusion length to monolayer semiconductors to form a type II heterostructure is a promising strategy to simultaneously enhance the light harvesting capability and photocarrier lifetime of monolayer semiconductors.
Ultrafast photocarrier recombination dynamics in black phosphorus-molybdenum disulfide (BP/MoS2) heterostructure

Zhonghui Nie,Yuhan Wang,Ziling Li,Yue Sun,Xiaoping Liu,Edmond Turcu,Yi Shi,Rong Zhang,Yu Ye,Yongbing Xu,Fengqiu Wang

DOI: https://doi.org/10.48550/arXiv.1811.04706

2018-11-12

Abstract:Van der Waals (vdW) heterostructures constructed with two-dimensional (2D) materials have attracted great interests, due to their fascinating properties and potential for novel applications. While earlier efforts have advanced the understanding of the ultrafast cross-layer charge transfer process in 2D heterostructures, mechanisms for the interfacial photocarrier recombination remain, to a large extent, unclear. Here, we investigate a heterostructure comprised of black phosphorus (BP) and molybdenum disulfide (MoS2), with a type-II band alignment. Interestingly, it is found that the photo-generated electrons in MoS2 (transferred from BP) exhibit an ultrafast lifetime of about 5 ps, significantly shorter than those of the constituent materials. By corroborating with the relaxation of photo-excited holes in BP, it is revealed that the ultrafast time constant is as a result of efficient Langevin recombination, where the high hole mobility of BP facilitates a large recombination coefficient (approximately 2x10^-10 m^2/s). In addition, broadband transient absorption spectroscopy confirms that the hot electrons transferred to MoS2 distribute over a broad energy range following an ultrafast thermalization. The rate of the interlayer Langevin recombination is found to exhibit no energy level dependence. Our findings provide essential insights into the fundamental photo-physics in type-II 2D heterostructures, and also provide useful guidelines for customizing photocarrier lifetimes of BP for high-speed photo-sensitive devices.

Mesoscale and Nanoscale Physics
Electrostatic self-assembly of 2D/2D CoWO4/g-C3N4 p—n heterojunction for improved photocatalytic hydrogen evolution: Built-in electric field modulated charge separation and mechanism unveiling

Haiyang Wang,Ranran Niu,Jianhui Liu,Sheng Guo,Yongpeng Yang,Zhongyi Liu,Jun Li

DOI: https://doi.org/10.1007/s12274-022-4329-z

IF: 9.9

2022-05-13

Nano Research

Abstract:Two-dimensional (2D) semiconductor heterojunctions are considered as an effective strategy to achieve fast separation of photoinduced carriers. Herein, a novel CoWO 4 /g-C 3 N 4 (CWO/CN) p—n junction was synthesized using an electrostatic self-assembly method. The constructed 2D/2D p—n heterostructure had a rich hetero-interface, increased charge density, and fast separation efficiency of photoinduced carriers. The in-situ Kelvin probe force microscopy confirmed that the separation pathway of photoinduced carriers through the interface obeyed an II-scheme charge transfer mechanism. Experimental results and density functional theory calculations indicated the differences of work function between CWO and CN induced the generation of built-in electric field, ensuring an efficient separation and transfer process of photoinduced carriers. Under the optimized conditions, the CWO/CN heterojunction displayed enhanced photocatalytic H 2 generation activity under full spectrum and visible lights irradiation, respectively. Our study provides a novel approach to design 2D/2D hetero-structured photocatalysts based on p—n type semiconductor for photocatalytic H 2 generation.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Insights into Photoinduced Carrier Dynamics and Overall Water Splitting of Z-Scheme van der Waals Heterostructures with Intrinsic Electric Polarization

Juan Wang,Xuejin Zhang,Xiaohan Song,Yingcai Fan,Zhihua Zhang,Mingwen Zhao

DOI: https://doi.org/10.1021/acs.jpclett.2c03742

2023-01-26

Abstract:Using first-principles calculations in combination with nonadiabatic molecular dynamics (NAMD), we propose novel heterostructures of carbon nitride (C7N6) and the Janus GaSnPS monolayer as promising direct Z-scheme photocatalysts for solar-driven overall water splitting. The out-of-plane electric field due to the electric polarization which is dependent on the stacking pattern alters the band alignment and catalytic activity of the heterostructures. The relatively strong interfacial nonadiabatic coupling and long quantum coherence time accelerate the interlayer carrier recombination, enabling a direct Z-scheme photocatalytic mechanism. More importantly, the redox ability of the remanent photogenerated carriers in the Z scheme is strong enough to trigger both the hydrogen evolution reaction (HER) and oxygen reduction reaction (OER) simultaneously without the help of sacrificial agents. Our work reveals a fundamental understanding of ultrafast charge carrier dynamics at vdW heterointerfaces as well as new design prospects for highly efficient direct Z-scheme photocatalysts.
Structurally Unraveling the Photocarrier Behavior of Cu 2 O/ZnO Heterojunction Photodetectors

Shen Zhong,Da Xiong,Binbin Zhang,Xiao Yang,Tao Yang,Guo Tian,Hongrui Zhang,Weiqing Yang,Weili Deng

DOI: https://doi.org/10.1021/acsphotonics.1c01490

IF: 7

2022-01-05

ACS Photonics

Abstract:Photoelectric conversion in a semiconductor is the basis of photodetectors (PDs), so unraveling the photocarrier behavior is essential for designing and enhancing the performance of PDs. Herein, we experimentally uncover the generation and transport behavior of the photocarrier in the self-powered Cu2O/ZnO heterojunction PDs. The thickness of the functional layer is proved to be a major factor in determining the photocarrier generation and transport, namely, the increase in the number of photocarriers with the prolongation of the functional layer, while the transport of the carrier is impeded by the increase in the internal defects and becomes the degrading factor. By tuning the length of the ZnO nanorods, the structurally designed PD exhibits high responsivity of 45.74 mA/W under 450 nm light illumination at 0 V bias, which is 5.75 times larger than that of the quasi-planar one. Moreover, the PD presents a fast response speed (rise time of 5.5 ms and decay time of 5.9 ms) and long-term stability, showing only 3% degradation of the photocurrent after 30 days in the air. This work provides a microscopic perspective of photocarrier behavior for understanding the internal photoelectric conversion mechanism of the p–n junction-based PDs, which could further promote the practical applications of high-efficiency self-powered photodetectors.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Defect-regulated charge carrier dynamics in two-dimensional ZnO/MoS 2 heterostructure

Shuhong Ma,Ningxin Liu,Zheng Li,Chaochao Qin,Zhaoyong Jiao

DOI: https://doi.org/10.2139/ssrn.4523951

IF: 4.565

2023-09-09

Results in Physics

Abstract:Van der Waals ZnO/MoS 2 heterostructure has been experimentally demonstrated as one of the potential candidates for photocatalyst, however, the charge carrier dynamics upon photoexcitation still remains unclear. By using nonadiabatic molecular dynamics simulations, we mainly focus on the influences of interfacial point defects on photogenerated charge separation in the ZnO/MoS 2 . The results reveal that oxygen vacancy in ZnO layer can induce a higher hole transfer efficiency compared to the pristine ZnO/MoS 2 , which attributes to the enhanced nonadiabatic coupling, originating from an out-of-plane vibration mode of S atoms, a decreased energy gap for intralayer hole transfer and stronger energy state oscillation. Alternatively, S vacancy in MoS 2 introducing additional energy states in the band gap of ZnO/MoS 2 , serves as charge carrier recombination channels, and significantly reduces charge carrier lifetime, while doping O atom in S vacancy can compensate this effect. This study provides helpful guidance to design functional devices for solar energy photovoltaic conversion, based on two-dimensional ZnO/MoS 2 heterostructures.

physics, multidisciplinary,materials science
New Pathway for Hot Electron Relaxation in Two-Dimensional Heterostructures.

Jin Zhang,Hao Hong,Jia Zhang,Huixia Fu,Peiwei You,Johannes Lischner,Kaihui Liu,Efthimios Kaxiras,Sheng Meng

DOI: https://doi.org/10.1021/acs.nanolett.8b03005

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional (2D) heterostructures composed of transition-metal dichalcogenide atomic layers are the new frontier for novel optoelectronic and photovoltaic device applications. Some key properties that make these materials appealing, yet are not well understood, are ultrafast hole/electron dynamics, interlayer energy transfer and the formation of interlayer hot excitons. Here, we study photoexcited electron/hole dynamics in a representative heterostructure, the MoS2/WSe2 interface, which exhibits type II band alignment. Employing time-dependent density functional theory in the time domain, we observe ultrafast charge dynamics with lifetimes of tens to hundreds of femtoseconds. Most importantly, we report the discovery of an interfacial pathway in 2D heterostructures for the relaxation of photoexcited hot electrons through interlayer hopping, which is significantly faster than intralayer relaxation. This finding is of particular importance for understanding many experimentally observed photoinduced processes, including charge and energy transfer at an ultrafast time scale (<1 ps).
Characterization of Type I/II g-C 3 N 4 /MoS 2 van der Waals Heterostructures: A New Theoretical Insight

Xin Wang,Jing Ma,Jianhua Fan,Hui Zhu,Xingman Liu,Hongqiang Xia,Yingtao Liu

DOI: https://doi.org/10.1021/acs.jcim.3c01089

IF: 6.162

2023-08-03

Journal of Chemical Information and Modeling

Abstract:The charge transfer mechanism of the g-C3N4/MoS2 heterojunction is still disputed. Some regard it as a type I pathway, some regard it as a type II pathway, and still some regard it as a Z-scheme pathway. Especially, the results obtained by density functional theory (DFT) calculations are not totally in agreement. Here, we constructed four g-C3N4/MoS2 heterojunctions on the basis of the aperture alignment modes of g-C3N4 and MoS2. Their morphology and photocatalytic activity were investigated via first-principles and excited state dynamics simulations. By systemically comparing the interfacial binding energy and electronic structure (e.g., band structure, electrostatic potential, and band edge positions) of g-C3N4/MoS2 heterojunctions, we found that both type I and type II band alignment structures could be obtained. Moreover, the calculated lifetimes of interlayer photogenerated electrons and holes show that type II g-C3N4/MoS2 tends to favor a general type II pathway rather than a Z-scheme pathway. This study could provide a deep understanding of the photocatalytic mechanism of g-C3N4/MoS2 van der Waals heterostructures, which will be of great use for applications in photocatalysis.

chemistry, multidisciplinary, medicinal,computer science, interdisciplinary applications, information systems

Systems of care, featherless bipeds, and the measure of all things.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Efficient Carrier Separation in Graphitic Zinc Oxide and Blue Phosphorus van der Waals Heterostructure

Enzyme mimics based upon supramolecular coordination chemistry.

Insights into Photoinduced Carrier Dynamics and Hydrogen Evolution Reaction of Organic PM6/PCBM Heterojunctions

Efficient Exciton Dissociation in Heterojunction Interfaces Realizing Enhanced Photoresponsive Performance

The dean's letter of recommendation and resident performance.

Disparity of carriers in polarized heterostructures: A first-principles study

The effects of intercalated environmental gas molecules on the carrier dynamics in WSe2/WS2 heterostructures

Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Mechanisms of Ultrafast Charge Separation in a PTB7/Monolayer MoS2 van der Waals Heterojunction

Long-range Transport and Ultrafast Interfacial Charge Transfer in Perovskite/monolayer Semiconductor Heterostructure for Enhanced Light Absorption and Photocarrier Lifetime

Ultrafast photocarrier recombination dynamics in black phosphorus-molybdenum disulfide (BP/MoS2) heterostructure

Electrostatic self-assembly of 2D/2D CoWO4/g-C3N4 p—n heterojunction for improved photocatalytic hydrogen evolution: Built-in electric field modulated charge separation and mechanism unveiling

Insights into Photoinduced Carrier Dynamics and Overall Water Splitting of Z-Scheme van der Waals Heterostructures with Intrinsic Electric Polarization

Structurally Unraveling the Photocarrier Behavior of Cu 2 O/ZnO Heterojunction Photodetectors

Defect-regulated charge carrier dynamics in two-dimensional ZnO/MoS 2 heterostructure

New Pathway for Hot Electron Relaxation in Two-Dimensional Heterostructures.

Characterization of Type I/II g-C 3 N 4 /MoS 2 van der Waals Heterostructures: A New Theoretical Insight