Power dissipation in deep submicron CMOS digital circuits

R. Gu,M. Elmasry
DOI: https://doi.org/10.1109/ISCAS.1995.521444
1995-04-28
Abstract:In this paper, a simple analytical model for estimating standby and switching power dissipation in deep submicron CMOS digital circuits is introduced. The model is based on Berkeley Short-Channel (BSIM) model and fits HSPICE simulation results well. A design methodology to minimize the power-delay product by selecting the lower and upper bounds of the supply and threshold voltages is presented.
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