High aspect ratio TSV copper filling with different seed layers

M. J. Wolf,Thomas Dretschkow,Bernhard Wunderle,N. Jurgensen,Gunter Engelmann,Oswin Ehrmann,Albrecht Uhlig,Bernd Michel,Herbert Reichl
DOI: https://doi.org/10.1109/ECTC.2008.4550029
2008-05-27
Abstract:The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment.
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