Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure

Lei Mu,Qiaoxia Xing,Yanlin Mou,Junwei Ma,Chong Wang,Jiasheng Zhang,Yixuan Ma,Yuchen Lei,Yuangang Xie,Boyang Yu,Chenghao Pan,Shenyang Huang,Hugen Yan

DOI: https://doi.org/10.1021/acs.nanolett.4c02035

2024-09-25

Abstract:The interlayer electronic coupling is responsible for the electronic structure evolution from monolayer graphene to graphite and for the moiré potential in twisted bilayer graphene. Here we demonstrate that the interlayer transfer integral (hopping parameter) increases nearly 40% with a quite moderate pressure of ∼3.5 GPa, manifested by the resonance peak shift in the infrared spectra of all 2-10 L graphene. A simple model based on the Morse potential enabled us to establish the relationship between the transfer integral and pressure. Our work provides fundamental insights into the dependence of the electronic coupling on the interlayer distance.