A Time-Domain Large-Signal Analysis of GaAs MESFET Devices Incorporating Frequency-Domain Expression for Termination Voltages (Voltage Substitution Method)

M. Akaike
DOI: https://doi.org/10.1109/EUMA.1988.333968
1988-10-01
Abstract:A nonlinear large-signal analysis is proposed, in which different impedances are connected to the external circuits for different frequencies. Analysis of the performance characteristics of frequency doublers, high-efficiency amplifiers, and degenerate amplifiers using GaAs MESFET's is shown.
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