Abstract:Herein an innovative approach of in situ growth of a second phase to enhance the thermoelectric (TE) performance of n‐type bismuth telluride is introduced. The materials with a semi‐coherent interface structure significantly boost the TE harvester's output power which quadruples the commercial one of identical geometric structure. It can be applied in self‐powered wearable devices or autonomous sensors, providing a promising solution for sustainable and efficient power supply. Currently, the only thermoelectric (TE) materials commercially available at room temperature are those based on bismuth telluride. However, their widespread application is limited due to their inferior thermoelectric and mechanical properties. In this study, a strategy of growing a rigid second phase of MoSe2 is employed, in situ within the matrix phase to achieve n‐type bismuth telluride‐based materials with exceptional mechanical and thermoelectric properties. The in situ grown second phase contributes to both the electronic and lattice thermal conductivities. This is primarily attributed to the strong energy filtering effect, as the second phase forms a semi‐common lattice interfacial structure with the matrix phase during growth. Furthermore, for composites containing 2 wt% MoSe2, a maximum zT value of 1.24 at 373 K can be achieved. On this basis, 8‐pair TE module is fabricated and 1‐pair TE module is optimized using a homemade p‐type material. The optimized 1‐pair TE module generates a maximum output power of 13.6 μW, which is twice that of the 8‐pair TE module and four times more than the 8‐pair TE module fabricated by commercial material. This work facilitates the development of the TE module by presenting a novel approach to obtaining bismuth telluride‐based thermoelectric materials with superior thermoelectric and mechanical properties.

Thermoelectric bismuth telluride nanostructures fabricated by electrodeposition within flexible templates

Enhanced Thermoelectric Performance of Solution-Derived Bismuth Telluride Based Nanocomposites Via Liquid-Phase Sintering

Surfactant-free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit.

Bi 2 Te 3 -based flexible thermoelectric generator for wearable electronics

High-performance and flexible thermoelectric films by screen printing solution-processed nanoplate crystals

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Amorphous Framework in Electrodeposited CuBiTe Thermoelectric Thin Films with High Room-Temperature Performance

Bismuth Telluride Based Efficient Thermoelectric Power Generator with Electrically Conducive Interfaces for Harvesting Low Temperature Heat

Achieving High Thermoelectric Performance in Bi2(Te, Se)3 Thin Film with (00 l)-Oriented by Incorporating Tellurization and Selenization Processes

Flexible Thermoelectric Films Based on Bi2Te3 Nanosheets and Carbon Nanotube Network with High n-Type Performance

Exploring Material Properties and Device Output Performance of a Miniaturized Flexible Thermoelectric Generator Using Scalable Synthesis of Bi2Se3 Nanoflakes

Bi0.5Sb1.5Te3/PEDOT:PSS-based flexible thermoelectric film and device

Graphitic carbon nitride-bismuth antimony telluride nanocomposites: A potential material for thermoelectric applications

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys

Wet-chemical synthesis and consolidation of stoichiometric bismuth telluride nanoparticles for improving the thermoelectric figure-of-merit

Flexible n-type thermoelectric composite films with enhanced performance through interface engineering and post-treatment

Optimized thermoelectric properties of flexible p-type Sb2Te3 thin film prepared by a facile thermal diffusion method

In Situ Synthesis of High Thermoelectric Performance Bi2Te3 Flexible Thin Films through Thermal Diffusion Engineering

Self-assembled bismuth telluride films with well-aligned zero- to three-dimensional nanoblocks for thermoelectric applications

High Thermoelectric Performance in Bismuth Telluride via Constructing MoSe2‐2D Heterojunction

High-Performance W-Doped Bi0.5Sb1.5Te3 Flexible Thermoelectric Films and Generators