Characterization and modelling of microwave and millimeter-wave large-signal device-circuit interaction based on electro-thermal physical models

C. Snowden
DOI: https://doi.org/10.1109/MWSYM.1997.604545
1997-06-08
Abstract:This paper describes a comprehensive approach to modelling the large-signal behaviour of microwave and millimeter-wave transistor circuits based on electro-thermal physical device models with harmonic-balance or time-domain simulators. MESFET oscillator and pHEMT MMIC power amplifier designs have been used to validate the method, achieving excellent agreement between simulated and measured data.
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