Science will never be the same again

R. Horton

DOI: https://doi.org/10.1016/S0140-6736(10)61091-4

IF: 202.731

2010-07-17

The Lancet

Abstract:

What problem does this paper attempt to address?

High Performance Hall Sensors Built on Chemical Vapor Deposition-Grown Bilayer Graphene.

Tongyu Dai,Hua Xu,Shanshan Chen,Zhiyong Zhang

DOI: https://doi.org/10.1021/acsomega.2c02864

IF: 4.1

2022-08-02

ACS Omega

Abstract:Graphene has been considered as an excellent channel material for constructing magnetic sensors or Hall elements with high sensitivity and linearity. Compared to intensively reported graphene Hall elements (GHEs) fabricated on monolayer graphene, the exploration on bilayer graphene-based Hall elements is very rare. Here, we first investigate the performance and potential of Hall elements built on chemical vapor deposition-grown bilayer graphene. Without applying any gate voltage, the bilayer GHEs exhibit a typical voltage sensitivity of 119 mV/VT and current sensitivity of 397 V/AT, which are higher than those in the monolayer GHEs, indicating the better performance in practical applications. Moreover, the bilayer GHEs present obviously lower noise and then the minimum detection magnetic field compared to the monolayer ones. Hall elements built on bilayer graphene show certain unique advantages and can be used as an important supplement to mainstreaming monolayer GHEs.

chemistry, multidisciplinary
Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

Bogdan Karpiak,André Dankert,Saroj P. Dash

DOI: https://doi.org/10.1063/1.4997463

2018-04-25

Abstract:Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance in different environmental conditions. Here we present magnetic Hall sensors fabricated on large area commercially available CVD graphene protected by exfoliated hexagonal boron nitride (h-BN). To connect the graphene active regions of Hall samples to the outputs the 1D edge contacts were utilized which show reliable and stable electrical properties. The operation of the Hall sensors shows the current-related sensitivity up to 345 V/(AT). By changing the carrier concentration and type in graphene by the application of gate voltage we are able to tune the Hall sensitivity.

Applied Physics
Flexible Hall Sensors Based on Graphene

Zhenxing Wang,Mehrdad Shaygan,Martin Otto,Daniel Schall,Daniel Neumaier

DOI: https://doi.org/10.1039/c5nr08729e

2017-07-27

Abstract:The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible electronic and sensor devices. Here, we present the fabrication and characterization of flexible graphene based Hall sensors. The Hall sensors are fabricated on 50 um thick flexible Kapton foil using large scale graphene grown by chemical vapor deposition technique on copper foil. Voltage and current normalized sensitivities of up to 0.096 V/VT and 79 V/AT were measured, respectively. These values are comparable to the sensitivity of rigid silicon based Hall sensors and are the highest values reported so far for any flexible Hall sensor devices. The sensitivity of the Hall sensor shows no degradation after being bent to a minimum radius of 4 mm, which corresponds to a tensile strain of 0.6%, and after 1,000 bending cycles to a radius of 5 mm.

Applied Physics,Mesoscale and Nanoscale Physics
High Performance Graphene Hall Sensors

Huang Le,Zhang Zhi-Yong,Peng Lian-Mao

DOI: https://doi.org/10.7498/aps.66.218501

IF: 0.906

2017-01-01

Acta Physica Sinica

Abstract:The state-of-the-art graphene Hall elements and integrated circuits are reviewed.By optimizing the growth and transfer of graphene and the micro-fabrication process of Hall sensor,graphene Hall elements and integrated circuits outperform conventional Hall sensors in many aspects.Graphene Hall elements exhibit better sensitivities,resolutions,linearities and temperature stabilities than commercialized Hall elements.Through developing a set of passivation processes,the stabilities of graphene Hall elements are improved.Besides,the flexible magnetic sensing and multifunctional detection applications based on graphene are demonstrated.In addition,graphene/silicon hybrid Hall integrated circuits are realized.By developing a set of low temperature processes (below 180 ℃),graphene Hall elements are monolithically integrated onto the passivation layer of silicon complementary metal oxide semiconductor chip.This work demonstrates that graphene possesses significant performance advantages in Hall magnetic sensing and potentially practical applications.
Ultra-Sensitive Graphene Hall Elements

le huang,zhiyong zhang,bingyan chen,xiaomeng ma,hua zhong,lianmao peng

DOI: https://doi.org/10.1063/1.4875597

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Hall elements were fabricated based on high quality chemical vapor deposition grown graphene, and their performance limit was explored. The as-fabricated graphene Hall element exhibits current-related sensitivity of up to 2093 V/AT under 200 mu A, and magnetic resolution of around 1 mG/Hz(0.5) at 3 kHz. This ultrahigh sensitivity and resolution stem from high carrier mobility, small Dirac point voltage of 3 V, and low carrier density of about 3 x 10(11) cm(-2) in graphene device. The current sensitivity is found to decrease with increasing current bias at large bias, and this phenomenon is attributed to the drain induced Dirac point shift effect in graphene channel. (C) 2014 AIP Publishing LLC.
Encapsulated graphene based Hall sensors on foil with increased sensitivity

Zhenxing Wang,Luca Banszerus,Martin Otto,Kenji Watanabe,Takashi Taniguchi,Christoph Stampfer,Daniel Neumaier

DOI: https://doi.org/10.1002/pssb.201600224

2017-07-27

Abstract:The encapsulation of graphene based Hall sensors on foil is shown to be an effective method for improving the performance in terms of higher sensitivity for magnetic field detection. Two types of encapsulation were investigated: a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN). The Hall sensor with PMMA encapsulation already shows higher sensitivity compared to the one without encapsulation. However, the Hall sensor with graphene encapsulated between two stacks of hBN shows a current and a voltage normalized sensitivity of up to 2270 V/AT and 0.68 V/VT respectively, which are the highest reported sensitivity values for Hall sensors on foil so far.

Applied Physics,Mesoscale and Nanoscale Physics
Flexible Graphene Hall Sensors with High Sensitivity

Le Huang,Zhiyong Zhang,Bingyan Chen,Lian-Mao Peng

DOI: https://doi.org/10.1109/iedm.2015.7409822

2015-01-01

Abstract:High sensitivity and flexible Graphene Hall elements (GHEs) were demonstrated. The average and maximum current-related sensitivity of our GHEs are respectively 2030 V/AT and 2364 V/AT, outperforming almost all reported Hall sensors. In addition, the GHEs fabricated on flexible substrate show high sensitivity, linearity and stability against bending. Our work shows that graphene Hall sensors are promising in accurate detection of magnetic field and flexible sensing systems.
Exploration of Sensitivity Limit for Graphene Magnetic Sensors

Bingyan Chen,Le Huang,Xiaomeng Ma,Lijun Dong,Zhiyong Zhang,Lian-Mao Peng

DOI: https://doi.org/10.1016/j.carbon.2015.07.040

IF: 10.9

2015-01-01

Carbon

Abstract:Graphene Hall elements (GHEs) with ultra-high sensitivity are fabricated based on chemical vapor deposition (CVD)-grown graphene, and then the sensitivity limit and the relative mechanism are explored. Through tuning the 2-D carrier concentration by applying back-gate voltage, GHE can reach its maximum current related sensitivity up to 2745V/AT. A model considering both of electron and hole is developed to describe the sensitivity of GHEs well especially near the Dirac point. The maximum current sensitivity of GHEs is then proved to be inversely proportional to the residual carrier concentration in graphene on substrate, which is helpful to provide strategy for further optimizing GHEs. Compromise between performance and uniformity should be carried out as a GHE is used in practice.
Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

Burkay Uzlu,Zhenxing Wang,Sebastian Lukas,Martin Otto,Max C. Lemme,Daniel Neumaier

DOI: https://doi.org/10.1038/s41598-019-54489-0

IF: 4.6

2019-12-01

Scientific Reports

Abstract:Abstract We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: (1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. (2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. (3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field B min down to $$290\,{\rm{nT}}/\surd {\rm{Hz}}$$ 290 nT / √ Hz and sensitivity up to 0.55 V/VT was found for Hall sensors working on flexible polyimide (PI) substrates. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.

multidisciplinary sciences
Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity

Lionel Petit,Tom Fournier,Géraldine Ballon,Cédric Robert,Delphine Lagarde,Pascal Puech,Thomas Blon,Benjamin Lassagne

2024-10-05

Abstract:Graphene Hall effect magnetic field sensors hold great promise for the development of ultra-sensitive magnetometers. Their performance is frequently analysed using the two-channel model where electron and hole conductivities are simply added. Unfortunately, this model is unable to capture all the features of the sensor, particularly the bias current dependence of the magnetic field sensitivity. Here we present an advanced model that provides an in-depth understanding of how graphene Hall sensors operate, and demonstrate its ability to quantitatively assess their performance. First, we report the fabrication of sensors with different qualities of graphene, with the best devices achieving magnetic field sensitivities as high as 5000 ohms/T, outperforming the best silicon and narrow-gap semiconductor-based sensors. Then, we examine their performance in detail using the proposed numerical model, which combines Boltzmann formalism, with distinct Fermi levels for electrons and holes, and a new method for the introduction of substrate-induced electron-hole puddles. Importantly, the dependences of magnetic field sensitivity on bias current, disorder, substrate and Hall bar geometry are quantitatively reproduced for the first time. In addition, the model emphasizes that the performance of devices with widths of the order of the charge carrier diffusion length, is significantly affected by the bias current due to the occurrence of large and non-symmetric carrier accumulation and depletion areas near the edges of the Hall bar. The formation of these areas induces a transverse diffusion particle flux capable of counterbalancing the particle flux induced by the Lorentz force when the Hall electric field cancels out in the ambipolar regime. Finally, we discuss how sensor performance can be enhanced by Fermi velocity engineering, paving the way for future ultra-sensitive graphene Hall effect sensors.

Mesoscale and Nanoscale Physics,Applied Physics
Gate-Tunable Graphene Hall Sensors with High Magnetic Field Sensitivity

Brian T. Schaefer,Lei Wang,Alexander Jarjour,Kenji Watanabe,Takashi Taniguchi,Paul L. McEuen,Katja C. Nowack

DOI: https://doi.org/10.1038/s41467-020-18007-5

2019-12-29

Abstract:Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but Hall-effect sensors are in principle able to operate over a broad range of these conditions. Here, we fabricate and characterize micrometer-scale graphene Hall sensors demonstrating high magnetic field sensitivity from liquid-helium to room temperature and in background magnetic field up to several Tesla. By tuning the charge carrier density with an electrostatic gate, we optimize the magnetic field sensitivity for different working conditions. From measurements of the Hall coefficient and the Hall voltage noise at 1 kHz, we estimate an optimum magnetic field sensitivity of 80 nT Hz$^{-1/2}$ at 4.2 K, 700 nT Hz$^{-1/2}$ at room temperature, and 3 $\mu$T Hz$^{-1/2}$ in 3 T background magnetic field at 4.2 K. Our devices perform competitively with the best existing Hall sensor technologies at room temperature, outperform any Hall sensors reported in the literature at 4.2 K, and demonstrate high sensitivity for the first time in a few Tesla applied magnetic field.

Mesoscale and Nanoscale Physics,Applied Physics
Batch-fabricated High-Performance Graphene Hall Elements

Huilong Xu,Zhiyong Zhang,Runbo Shi,Honggang Liu,Zhenxing Wang,Sheng Wang,Lian-Mao Peng

DOI: https://doi.org/10.1038/srep01207

IF: 4.6

2013-01-01

Scientific Reports

Abstract:Hall elements are by far the most widely used magnetic sensor. In general, the higher the mobility and the thinner the active region of the semiconductor used, the better the Hall device. While most common magnetic field sensors are Si-based Hall sensors, devices made from III-V compounds tend to favor over that based on Si. However these devices are more expensive and difficult to manufacture than Si, and hard to be integrated with signal-processing circuits for extending function and enforcing performance. In this article we show that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability.
Graphene based sensors: theoretical study

Karolina Z. Milowska,Jacek A. Majewski

DOI: https://doi.org/10.1021/jp504199r

2014-08-08

Abstract:Graphene, a 2-dimensional monolayer form of sp2 hybridizated carbon atoms, is attracting increasing attention due to its unique and superior physicochemical properties. Covalently functionalized graphene layers, with their modifiable chemical functionality and usefull electrical properties, are excellent candidates for broad range of sensors, suitable for biomedical, optoelectronic and environmental applications. Here, we present extensive study of transport properties of sensors based on covalently functionalized graphene monolayer (GML) with graphene electrodes. The transmissions, density of states and current-voltage characterisctics supported by analysis of charge distribution of GML functionalized by -CH3, -CH2, -NH2, -NH and -OH fragments have been calculated by means of density functional theory (DFT) and non-equilibrium Green's function (NEGF). Further, we demonstrate how to control the device sensitivity by manipulating: (i) concentration, (ii) particular arrangement, and (iii) type of surface groups. We explain the underlying detection physical mechanisms. Comparisons of the theoretical results to available experimental data are provided are made and show good agreement.

Materials Science
Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits.

Tongyu Dai,Chengying Chen,Le Huang,Jianhua Jiang,Lian-Mao Peng,Zhiyong Zhang

DOI: https://doi.org/10.1021/acsnano.0c08435

IF: 17.1

2020-01-01

ACS Nano

Abstract:Graphene Hall elements (GHEs) have been demonstrated to be promising magnetic field sensors with excellent sensitivity, linearity, temperature stability, and compatibility with complementary-metal-oxide-semiconductor (CMOS)-integrated circuits (ICs). However, the demonstrated GHEs have still not exhibited a comprehensive advantage in performance over commercial integrated Hall sensors which were implemented in integrated Hall element and CMOS processing ICs. In this work, we develop a technology for the three-dimensional (3D) heterogeneous integration of silicon-based CMOS ICs and GHEs, and the fabricated magnetic field sensors outperform commercial high-end integrated Hall sensors. Specifically, the integrated Hall sensors are implemented in a stacked integration on Si based on a chopper programmable-gain amplifier (CPGA), a chopper-stabilized second-order sigma-delta modulator (CSDM), and graphene-based Hall elements on monochips. GHEs with high sensitivity (up to 1000 A/VT) are fabricated with a compatible process on a smoothened silicon nitride passivation layer of silicon-based CMOS ICs, and the two device layers are connected by an interlayer. The heterogeneous integrated Hall ICs exhibit current and voltage magnetic sensitivities up to 64 000 A/VT and 6.12 V/VT, respectively, which are much higher than those in all other reported nanomaterial-based Hall sensors and even in high-end commercial Hall ICs. Furthermore, the 3D heterogeneous integration technology used here can be extended as a universal technology for integrating nanomaterial-based sensors and Si CMOS ICs.
High mobility graphene field effect transistors on flexible EVA/PET foils

Munis Khan,Jie Ji,Binbin Zhou,Peter U. Jepsen,Peter Boggild,August Yurgens

DOI: https://doi.org/10.1088/2053-1583/ad4b36

IF: 6.861

2024-05-15

2D Materials

Abstract:Monolayer graphene is a promising material for a wide range of applications, including sensors, optoelectronics, antennas, EMR shielding, flexible electronics, and conducting electrodes. Chemical vapor deposition (CVD) of carbon atoms on a metal catalyst is the most scalable and cost-efficient method for synthesizing high-quality, large-area monolayer graphene. The usual method of transferring the CVD graphene from the catalyst to a target substrate involves a polymer carrier which is dissolved after the transfer process is completed. Due to often unavoidable damage to graphene, as well as contamination and residues, carrier mobilities are typically 1 000 − 3 000 cm^2/(V s), unless complex and elaborate measures are taken. Here, we report on a simple scalable fabrication method for flexible graphene field-effect transistors that eliminates the polymer interim carrier, by laminating the graphene directly onto office lamination foils, removing the catalyst, and depositing Parylene N as a gate dielectric and encapsulation layer. The fabricated transistors show field and Hall-effect mobilities of 7 000 − 10 000 cm^2/(V s) with a residual charge-carrier density of 2 × 10^11 1/cm^2 at room temperature. We further validate the material quality by terahertz time domain spectroscopy (THz-TDS) and observation of the quantum Hall effect at low temperatures in a moderate magnetic field of ∼ 5 T. The Parylene encapsulation provides long-term stability and protection against additional lithography steps, enabling vertical device integration in multilayer electronics on a flexible platform.

materials science, multidisciplinary
Flicker Noise and Magnetic Resolution of Graphene Hall Sensors at Low Frequency

Huilong Xu,Le Huang,Zhiyong Zhang,Bingyan Chen,Hua Zhong,Lian-Mao Peng

DOI: https://doi.org/10.1063/1.4821270

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Hall elements fabricated on chemical vapor deposited graphene exhibited high current- and voltage-related sensitivities due to its low intrinsic carrier density and high mobility about 5000 cm2/V s. Electric noise of the Hall elements was measured at room temperature and found to be largely Flicker noise at low frequency which can be well described by Hooge's empirical relation with a low noise parameter of about 1.8 × 10−4. The combination of high sensitivity and low noise in graphene Hall elements leads to a high room temperature magnetic resolution of about 5 × 10−3 G/Hz0.5 at 3 kHz.
Highly sensitive graphene biosensors based on surface plasmon resonance.

L Wu,H S Chu,W S Koh,E P Li

DOI: https://doi.org/10.1364/OE.18.014395

IF: 3.8

2010-01-01

Optics Express

Abstract:A surface plasmon resonance (SPR) based graphene biosensor is presented. It consists of a graphene sheet coated above a gold thin film, which has been proposed and experimentally fabricated recently [ChemPhysChem 11, 585 (2010)]. The biosensor uses attenuated total reflection (ATR) method to detect the refractive index change near the sensor surface, which is due to the adsorption of biomolecules. Our calculations show that the proposed graphene-on-gold SPR biosensor (with L graphene layers) is (1 + 0.025 L) x gamma (where gamma > 1) times more sensitive than the conventional gold thin film SPR biosensor. The improved sensitivity is due to increased adsorption of biomolecules on graphene (represented by the factor gamma) and the optical property of graphene.
High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Siyu Zhou,Mengjian Zhu,Qiang Liu,Yang Xiao,Ziru Cui,Chucai Guo

DOI: https://doi.org/10.3390/nano12213777

2022-10-26

Abstract:Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d'unités.
High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Tymoteusz Ciuk,Beata Stanczyk,Krystyna Przyborowska,Dariusz Czolak,Artur Dobrowolski,Jakub Jagiello,Wawrzyniec Kaszub,Michal Kozubal,Roman Kozlowski,Pawel Kaminski

DOI: https://doi.org/10.1109/ted.2019.2915632

IF: 3.1

2019-07-01

IEEE Transactions on Electron Devices

Abstract:In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition process. To ensure statistical perspective, characteristics of 23 elements are determined as a function of temperature ranging from 300 to 770 K. Passivated with a 100-nm-thick atomic-layer-deposited aluminum oxide, the sensor offers current-mode sensitivity of 80 V/AT with thermal stability of −0.02%/K within the range between 300 and 573 K, and −0.06%/K between 573 and 770 K. The sensor’s room-temperature output voltage is monitored in the magnetic field from −300 to +300 mT and its offset voltage at 0 T is assessed. Its high-temperature electrical properties are explained through a double-carrier transport involving spontaneous-polarization-induced holes in the graphene layer and thermally activated electrons emitted from a deep acceptor level related to silicon vacancy $text{V}_{textsf {Si}}^{textsf {1-/2-}}$ occupying the ${k}$ site of the 4H-SiC lattice. The sensor is compared with a previously reported one on vanadium-compensated SI on-axis 6H-SiC(0001). The new sensor’s applicability to magnetic field detection at high temperatures is verified.

engineering, electrical & electronic,physics, applied
Molecular detection by liquid gated Hall effect measurement of graphene

Hualin Zhan,Jiri Cervenka,Steven Prawer,David J. Garrett

DOI: https://doi.org/10.1039/C7NR06330J

2017-04-05

Abstract:The Hall resistance obtained in liquid gated Hall effect measurement of graphene demonstrates a higher sensitivity than the sheet resistance and the gate-source current for L-histidine of different concentrations in the pM range. This indicates that the extra information offered by the liquid gated Hall measurement of graphene can improve the sensitivity of the transistor-based potentiometric biosensors, and it could also be a supplementary method to the amperometric techniques for electrochemically inactive molecules. Further analysis of the system suggests that the asymmetry of the electron-hole mobility induced by the ions in the liquid serves as the sensing mechanism. The calculation on the capacitance values shows that the quantum capacitance is only dominant near the "Dirac" point in our system. This conclusion is useful for many applications involving graphene-electrolyte systems, such as bio-sensing, energy storage, neural stimulation, and so on.

Mesoscale and Nanoscale Physics,Other Condensed Matter

Science will never be the same again

High Performance Hall Sensors Built on Chemical Vapor Deposition-Grown Bilayer Graphene.

Gate-tunable Hall sensors on large area CVD graphene protected by h-BN with 1D edge contacts

Flexible Hall Sensors Based on Graphene

High Performance Graphene Hall Sensors

Ultra-Sensitive Graphene Hall Elements

Encapsulated graphene based Hall sensors on foil with increased sensitivity

Flexible Graphene Hall Sensors with High Sensitivity

Exploration of Sensitivity Limit for Graphene Magnetic Sensors

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

Performance of graphene Hall effect sensors: role of bias current, disorder and Fermi velocity

Gate-Tunable Graphene Hall Sensors with High Magnetic Field Sensitivity

Batch-fabricated High-Performance Graphene Hall Elements

Graphene based sensors: theoretical study

Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits.

High mobility graphene field effect transistors on flexible EVA/PET foils

Flicker Noise and Magnetic Resolution of Graphene Hall Sensors at Low Frequency

Highly sensitive graphene biosensors based on surface plasmon resonance.

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Molecular detection by liquid gated Hall effect measurement of graphene