Lateral approach to the os calcis.

N. Gould

Foot & Ankle

Abstract:

What problem does this paper attempt to address?

Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions

X. H. Li,M. K. Zhao,R. Zhang,C. H. Wan,Y. Z. Wang,X.M. Luo,S. Q. Liu,J. H. Xia,G. Q. Yu,X. F. Han

2023-06-05

Abstract:Stochastic p-Bit devices play a pivotal role in solving NP-hard problems, neural network computing, and hardware accelerators for algorithms such as the simulated annealing. In this work, we focus on Stochastic p-Bits based on high-barrier magnetic tunnel junctions (HB-MTJs) with identical stack structure and cell geometry, but employing different spin-orbit torque (SOT) switching schemes. We conducted a comparative study of their switching probability as a function of pulse amplitude and width of the applied voltage. Through experimental and theoretical investigations, we have observed that the Y-type SOT-MTJs exhibit the gentlest dependence of the switching probability on the external voltage. This characteristic indicates superior tunability in randomness and enhanced robustness against external disturbances when Y-type SOT-MTJs are employed as stochastic p-Bits. Furthermore, the random numbers generated by these Y-type SOT-MTJs, following XOR pretreatment, have successfully passed the National Institute of Standards and Technology (NIST) SP800-22 test. This comprehensive study demonstrates the high performance and immense potential of Y-type SOT-MTJs for the implementation of stochastic p-Bits.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
p-Bits for Probabilistic Spin Logic

Kerem Y. Camsari,Brian M. Sutton,Supriyo Datta

DOI: https://doi.org/10.1063/1.5055860

2019-03-12

Abstract:We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical representation for p-bits and can be built either from perpendicular magnets (PMA) designed to be close to the in-plane transition or from circular in-plane magnets (IMA). Magnetic tunnel junctions (MTJ) built using LBM's as free layers can be combined with standard NMOS transistors to provide three-terminal building blocks for large scale probabilistic circuits that can be designed to perform useful functions. Interestingly, this three-terminal unit looks just like the 1T/MTJ device used in embedded MRAM technology, with only one difference: the use of an LBM for the MTJ free layer. We hope that the concept of p-bits and p-circuits will help open up new application spaces for this emerging technology. However, a p-bit need not involve an MTJ, any fluctuating resistor could be combined with a transistor to implement it, while completely digital implementations using conventional CMOS technology are also possible. The p-bit also provides a conceptual bridge between two active but disjoint fields of research, namely stochastic machine learning and quantum computing. First, there are the applications that are based on the similarity of a p-bit to the binary stochastic neuron (BSN), a well-known concept in machine learning. Three-terminal p-bits could provide an efficient hardware accelerator for the BSN. Second, there are the applications that are based on the p-bit being like a poor man's q-bit. Initial demonstrations based on full SPICE simulations show that several optimization problems including quantum annealing are amenable to p-bit implementations which can be scaled up at room temperature using existing technology.

Emerging Technologies,Disordered Systems and Neural Networks
L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Kequn Chi,Yinuo Shi,Zhou Li,Wenbiao Zhang,Yun Xing,Xiang Feng,Yungui Ma,Hao Meng,Bo Liu

DOI: https://doi.org/10.1088/1361-6463/abf61d

2021-01-01

Abstract:Magnetic tunneling junctions with strong perpendicular shape anisotropy attract attention due to their high-density magnetic random access memory. As thermal stability increases, the power consumption also increases. To solve this problem, devices are made to be driven by spin-orbit torque (SOT) instead of spin-transfer torque. However, the assisting field needed for deterministic switching is a major obstacle for SOT devices. In this work, we demonstrate an L-shaped electrode structure attached to the magnetic recording layer to induce a composite SOT, achieving high-speed and field-free magnetization switching. Meanwhile, a comparative study between L-shaped and sidewall electrode structure demonstrates that the L-shaped structure leads to fast and low-power switching. Finally, the switching characteristic at various current densities and spin Hall angles is studied and it turns out that to achieve high-speed reversal, the current density and the spin Hall angle need to be optimized, which might be attributed to strong in-plane effective field component disturbance. The novel L-shaped structure is feasible for high-speed, low-power and deterministic switching and has great potential in spintronic applications.
Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

Vaibhav Ostwal,Punyashloka Debashis,Rafatul Faria,Zhihong Chen,Joerg Appenzeller

DOI: https://doi.org/10.1038/s41598-018-34996-2

2018-11-12

Abstract:Employing the probabilistic nature of unstable nano-magnet switching has recently emerged as a path towards unconventional computational systems such as neuromorphic or Bayesian networks. In this letter, we demonstrate proof-of-concept stochastic binary operation using hard axis initialization of nano-magnets and control of their output state probability (activation function) by means of input currents. Our method provides a natural path towards addition of weighted inputs from various sources, mimicking the integration function of neurons. In our experiment, spin orbit torque (SOT) is employed to "drive" nano-magnets with perpendicular magnetic anisotropy (PMA) -to their metastable state, i.e. in-plane hard axis. Next, the probability of relaxing into one magnetization state (+mi) or the other (-mi) is controlled using an Oersted field generated by an electrically isolated current loop, which acts as a "charge" input to the device. The final state of the magnet is read out by the anomalous Hall effect (AHE), demonstrating that the magnetization can be probabilistically manipulated and output through charge currents, closing the loop from charge-to-spin and spin-to-charge conversion. Based on these building blocks, a two-node directed network is successfully demonstrated where the status of the second node is determined by the probabilistic output of the previous node and a weighted connection between them. We have also studied the effects of various magnetic properties, such as magnet size and anisotropic field on the stochastic operation of individual devices through Monte Carlo simulations of Landau Lifshitz Gilbert (LLG) equation. The three-terminal stochastic devices demonstrated here are a critical step towards building energy efficient spin based neural networks and show the potential for a new application space.
[Epidemiology and its use in assessing the practice of diabetology].

P. Lombrail,P. Vexiau,G. Cathelineau,M. Brodin

Abstract:
Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Min Wang,Zhaohao Wang,Chao Wang,Weisheng Zhao

DOI: https://doi.org/10.1021/acsami.0c23127

2021-04-22

Abstract:Spin–orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii–Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c23127?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c23127</a>.Numerical calculation and verification on <a class="ref internalNav" href="#eq6">eqs 6</a> and <a class="ref internalNav" href="#eq8">8</a>; statement of the fluctuating thermal field; phase diagram of the first current and switching probability; results of timing analysis; micromagnetic simulation method; and snapshots of magnetization (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c23127/suppl_file/am0c23127_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Lanthanide molecular nanomagnets as probabilistic bits

Gerliz M. Gutiérrez-Finol,Silvia Giménez-Santamarina,Ziqi Hu,Lorena E. Rosaleny,Salvador Cardona-Serra,Alejandro Gaita-Ariño

DOI: https://doi.org/10.1038/s41524-023-01149-7

2023-07-07

Abstract:Over the decades, the spin dynamics of a large set of lanthanide complexes have been explored. Lanthanide-based molecular nanomagnets are bistable spin systems, generally conceptualized as classical bits, but many lanthanide complexes have also been presented as candidate quantum bits (qubits). Here we offer a third alternative and model them as probabilistic bits (p-bits), where their stochastic behavior constitutes a computational resource instead of a limitation. We present a modelling tool for molecular spin p-bits, we demonstrate its capability to simulate bulk magnetic relaxation data and ac experiments and to simulate a minimal p-bit network under realistic conditions. Finally, we go back to a recent systematic data gathering and screen the best lanthanide complexes for p-bit behavior, lay out the performance of the different lanthanide ions and chemical families and offer some chemical design considerations.

Mesoscale and Nanoscale Physics
Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs

John Daniel,Zheng Sun,Xuejian Zhang,Yuanqiu Tan,Neil Dilley,Zhihong Chen,Joerg Appenzeller

DOI: https://doi.org/10.1038/s41467-024-48152-0

2023-10-17

Abstract:Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic-bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic Magnetic Tunnel Junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, through integrating stochastic MTJs with 2D-MoS$_{2}$ FETs, the first on-chip realization of a key p-bit building block displaying voltage-controllable stochasticity is demonstrated. In addition, supported by circuit simulations, this work provides a careful analysis of the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. This understanding of the interplay between the characteristics of the transistors and the MTJ is vital for the construction of a fully functioning p-bit, making the design rules presented in this article key for future experimental implementations of scaled on-chip p-bit networks.

Mesoscale and Nanoscale Physics,Emerging Technologies
Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets

Kemal Selcuk,Shun Kanai,Rikuto Ota,Hideo Ohno,Shunsuke Fukami,Kerem Y. Camsari

DOI: https://doi.org/10.1103/physrevapplied.21.054002

IF: 4.6

2024-05-02

Physical Review Applied

Abstract:Stochastic magnetic tunnel junctions (SMTJs) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, SMTJs exhibiting the ideal characteristics necessary for probabilistic bits ( p -bits) are still lacking. Ideally, the SMTJs should have (a) voltage bias independence, preventing read disturbance; (b) uniform randomness in the magnetization angle between the two magnetic layers; and (c) fast fluctuations without requiring external magnetic fields, while being robust to magnetic field perturbations. Here, we propose a design that satisfies all of these requirements, using double-free-layer SMTJs with synthetic antiferromagnets (SAFs). We evaluate the proposed SMTJ design with experimentally benchmarked spin-circuit models, accounting for transport physics, coupled with the stochastic Landau-Lifshitz-Gilbert equation for magnetization dynamics. We find that the use of low-barrier SAF layers reduces dipolar coupling, achieving uncorrelated fluctuations at zero-magnetic field, surviving up to diameters exceeding D≈100nm if the nanomagnets can be made thin enough ( ≈1 – 2nm ). The double-free-layer structure retains bias independence and the circular nature of the nanomagnets provides near-uniform randomness with fast fluctuations. Combining our full SMTJ model with advanced transistor models, we estimate the energy to generate a random bit to be about 3.6fJ , with fluctuation rates of about 3.3GHz per p -bit. Our results will guide the experimental development of superior stochastic magnetic tunnel junctions for large-scale and energy-efficient probabilistic computation for problems relevant to machine learning and artificial intelligence. https://doi.org/10.1103/PhysRevApplied.21.054002 © 2024 American Physical Society

physics, applied
Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields

Raghvendra Posti,Chirag Kalouni,Dhananjay K Tiwari,Debangsu Roy

2024-08-16

Abstract:Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initialization problems such as prolonged writing duration, and limitations on the number of magnetic states. Consequently, a universal method for achieving multistate in PMA-based stacks remains elusive. Here, we propose a general experimental method for achieving multistate without any initialization step in SOT-driven magnetization switching by integrating an external out-of-plane magnetic field. Motivated by macrospin calculations coupled with micromagnetic simulations, which demonstrate the plausibility of magnetization state changes due to out-of-plane field integration, we experimentally verify multistate behavior in Pt/Co/Pt and W/Pt/Co/AlOx stacks. The occurrence of multistate behavior is attributed to intermediate domain states with Néel domain walls. We achieve repeatable 18 multistate configurations with a minimal reduction in retentivity through energy barrier measurements, paving the way for efficient analog computing.

Mesoscale and Nanoscale Physics
Machine Learning Quantum Systems with Magnetic p-bits

Shuvro Chowdhury,Kerem Y. Camsari

DOI: https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228205

2023-10-10

Abstract:The slowing down of Moore's Law has led to a crisis as the computing workloads of Artificial Intelligence (AI) algorithms continue skyrocketing. There is an urgent need for scalable and energy-efficient hardware catering to the unique requirements of AI algorithms and applications. In this environment, probabilistic computing with p-bits emerged as a scalable, domain-specific, and energy-efficient computing paradigm, particularly useful for probabilistic applications and algorithms. In particular, spintronic devices such as stochastic magnetic tunnel junctions (sMTJ) show great promise in designing integrated p-computers. Here, we examine how a scalable probabilistic computer with such magnetic p-bits can be useful for an emerging field combining machine learning and quantum physics.

Emerging Technologies,Machine Learning,Neural and Evolutionary Computing,Quantum Physics
Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit

Hakseung Rhee,Gwangmin Kim,Hanchan Song,Woojoon Park,Do Hoon Kim,Jae Hyun In,Younghyun Lee,Kyung Min Kim

DOI: https://doi.org/10.1038/s41467-023-43085-6

IF: 17.694

2023-11-09

NanoScience and Technology

Abstract:Energy-based computing is a promising approach for addressing the rising demand for solving NP-hard problems across diverse domains, including logistics, artificial intelligence, cryptography, and optimization. Probabilistic computing utilizing pbits, which can be manufactured using the semiconductor process and seamlessly integrated with conventional processing units, stands out as an efficient candidate to meet these demands. Here, we propose a novel pbit unit using an NbO x volatile memristor-based oscillator capable of generating probabilistic bits in a self-clocking manner. The noise-induced metal-insulator transition causes the probabilistic behavior, which can be effectively modeled using a multi-noise-induced stochastic process around the metal-insulator transition temperature. We demonstrate a memristive Boltzmann machine based on our proposed pbit and validate its feasibility by solving NP-hard problems. Furthermore, we propose a streamlined operation methodology that considers the autocorrelation of individual bits, enabling energy-efficient and high-performance probabilistic computing.
Integrated probabilistic computer using voltage-controlled magnetic tunnel junctions as its entropy source

Christian Duffee,Jordan Athas,Yixin Shao,Noraica Davila Melendez,Eleonora Raimondo,Jordan A. Katine,Kerem Y. Camsari,Giovanni Finocchio,Pedram Khalili Amiri

2024-12-11

Abstract:Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic energy barrier across large numbers of devices. In addition, non-spintronic components of S-MTJ-PIMs to date have been primarily realized using general-purpose processors or field-programmable gate arrays. Reaching the ultimate performance of spintronic PIMs, however, requires co-designed application-specific integrated circuits (ASICs), combining CMOS with spintronic entropy sources. Here we demonstrate an ASIC in 130 nm foundry CMOS, which implements integer factorization as a representative hard optimization problem, using PIM-based invertible logic gates realized with 1143 probabilistic bits. The ASIC uses stochastic bit sequences read from an adjacent voltage-controlled (V-) MTJ chip. The V-MTJs are designed to be thermally stable in the absence of voltage, and generate random bits on-demand in response to 10 ns pulses using the voltage-controlled magnetic anisotropy effect. We experimentally demonstrate the chip's functionality and provide projections for designs in advanced nodes, illustrating a path to millions of probabilistic bits on a single CMOS+V-MTJ chip.

Applied Physics,Disordered Systems and Neural Networks
Correlated fluctuations in spin orbit torque-coupled perpendicular nanomagnets

Punyashloka Debashis,Rafatul Faria,Kerem Y. Camsari,Supriyo Datta,Zhihong Chen

DOI: https://doi.org/10.1103/PhysRevB.101.094405

2019-10-08

Abstract:Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware platform for unconventional computing paradigms such as probabilistic spin logic. Efficient generation and tunability of high quality random bits is critical for these novel applications. However, current spintronic random number generators are based on superparamagnetic tunnel junctions (SMTJs) with tunability obtained through spin transfer torque (STT), which unavoidably leads to challenges in designing concatenated networks using these two terminal devices. The more recent development of utilizing spin orbit torque (SOT) allows for a three terminal device design, but can only tune in-plane magnetization freely, which is not very energy efficient due to the needs of overcoming a large demagnetization field. In this work, we experimentally demonstrate for the first time, a stochastic device with perpendicular magnetic anisotropy (PMA) that is completely tunable by SOT without the aid of any external magnetic field. Our measurements lead us to hypothesize that a tilted anisotropy might be responsible for the observed tunability. We carry out stochastic Landau-Lifshitz-Gilbert (sLLG) simulations to confirm our experimental observation. Finally, we build an electrically coupled network of two such stochastic nanomagnet based devices and demonstrate that finite correlation or anti-correlation can be established between their output fluctuations by a weak interconnection, despite having a large difference in their natural fluctuation time scale. Simulations based on a newly developed dynamical model for autonomous circuits composed of low barrier nanomagnets show close agreement with the experimental results.

Applied Physics,Mesoscale and Nanoscale Physics
Integer factorization using stochastic magnetic tunnel junctions

William A. Borders,Ahmed Z. Pervaiz,Shunsuke Fukami,Kerem Y. Camsari,Hideo Ohno,Supriyo Datta

DOI: https://doi.org/10.1038/s41586-019-1557-9

IF: 64.8

2019-09-18

Nature

Abstract:Conventional computers operate deterministically using strings of zeros and ones called bits to represent information in binary code. Despite the evolution of conventional computers into sophisticated machines, there are many classes of problems that they cannot efficiently address, including inference, invertible logic, sampling and optimization, leading to considerable interest in alternative computing schemes. Quantum computing, which uses qubits to represent a superposition of 0 and 1, is expected to perform these tasks efficiently<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-019-1557-9#ref-CR3">3</a>. However, decoherence and the current requirement for cryogenic operation<a href="/articles/s41586-019-1557-9#ref-CR4">4</a>, as well as the limited many-body interactions that can be implemented, pose considerable challenges. Probabilistic computing<a href="/articles/s41586-019-1557-9#ref-CR1">1</a>,<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="/articles/s41586-019-1557-9#ref-CR7">7</a> is another unconventional computation scheme that shares similar concepts with quantum computing but is not limited by the above challenges. The key role is played by a probabilistic bit (a p-bit)—a robust, classical entity fluctuating in time between 0 and 1, which interacts with other p-bits in the same system using principles inspired by neural networks<a href="/articles/s41586-019-1557-9#ref-CR8">8</a>. Here we present a proof-of-concept experiment for probabilistic computing using spintronics technology, and demonstrate integer factorization, an illustrative example of the optimization class of problems addressed by adiabatic<a href="/articles/s41586-019-1557-9#ref-CR9">9</a> and gated<a href="/articles/s41586-019-1557-9#ref-CR2">2</a> quantum computing. Nanoscale magnetic tunnel junctions showing stochastic behaviour are developed by modifying market-ready magnetoresistive random-access memory technology<a href="/articles/s41586-019-1557-9#ref-CR10">10</a>,<a href="/articles/s41586-019-1557-9#ref-CR11">11</a> and are used to implement three-terminal p-bits that operate at room temperature. The p-bits are electrically connected to form a functional asynchronous network, to which a modified adiabatic quantum computing algorithm that implements three- and four-body interactions is applied. Factorization of integers up to 945 is demonstrated with this rudimentary asynchronous probabilistic computer using eight correlated p-bits, and the results show good agreement with theoretical predictions, thus providing a potentially scalable hardware approach to the difficult problems of optimization and sampling.

multidisciplinary sciences
Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Pengwei Dou,Jingyan Zhang,Yaqin Guo,Tao Zhu,Jia Luo,Guoping Zhao,He Huang,Guoqiang Yu,Yunchi Zhao,Jie Qi,Xiao Deng,Yuanbo Wang,Jialiang Li,Jianxin Shen,Xinqi Zheng,Yanfei Wu,Hongxin Yang,Baogen Shen,Shouguo Wang

DOI: https://doi.org/10.1021/acs.nanolett.3c01192

IF: 10.8

2023-06-29

Nano Letters

Abstract:Spin obit torque (SOT) driven magnetization switching has been used widely for encoding consumption-efficient memory and logic. However, symmetry breaking under a magnetic field is required to realize the deterministic switching in synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA), which limits their potential applications. Herein, we report all electric-controlled magnetization switching in the antiferromagnetic Co/Ir/Co trilayers with vertical magnetic imbalance. Besides,...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Fen Xue,Shy-Jay Lin,Mingyuan Song,William Hwang,Christoph Klewe,Chien-Min Lee,Emrah Turgut,Padraic Shafer,Arturas Vailionis,Yen-Lin Huang,Wilman Tsai,Xinyu Bao,Shan X. Wang

DOI: https://doi.org/10.1038/s41467-023-39649-1

IF: 16.6

2023-07-04

Nature Communications

Abstract:Abstract Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co] N , which are either highly textured on single crystalline MgO substrates or randomly textured on SiO 2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x -polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

multidisciplinary sciences
Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing

Jaehyun Kim,Joon‐Kyu Han,Ho‐Young Maeng,Janguk Han,Jeong Woo Jeon,Yoon Ho Jang,Kyung Seok Woo,Yang‐Kyu Choi,Cheol Seong Hwang

DOI: https://doi.org/10.1002/adfm.202307935

IF: 19

2024-02-07

Advanced Functional Materials

Abstract:A probabilistic bit (p‐bit) with an n‐p‐n bistable resistor is demonstrated for probabilistic computing. It is fabricated on an 8‐inch wafer with complementary metal–oxide–semiconductor compatible technologies. Based on the stochastic behavior of a single transistor latch, invertible Boolean logic operations are demonstrated, and weighted maximum Boolean satisfiability problems are solved with high energy efficiency and accuracy. Probabilistic computing can solve complex combinatorial optimization problems more efficiently than conventional deterministic computing. A probabilistic bit (p‐bit) with an n‐p‐n bistable resistor (biristor) is demonstrated for probabilistic computing. It is fabricated on an 8‐inch wafer with complementary metal–oxide–semiconductor (CMOS) compatible technologies. Its stochastic behavior of threshold switching, which is based on the phenomenon of a single transistor latch, provides output with a Boltzmann distribution. The p‐bit is composed of a biristor, a serial resistor, and a comparator. The output probability of the biristor‐based p‐bits shows a sigmoidal relationship with the input voltage, showing typical p‐bit characteristics. Invertible Boolean logic operations with p‐bits are demonstrated, and weighted maximum Boolean satisfiability problems are solved with high energy efficiency and accuracy. The biristor‐based p‐bits with perfect CMOS compatibility show sufficient device stability, demonstrating the possibility of large‐scale integration with a p‐bit array for complex optimization solvers.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Lateral approach to the os calcis.

Stochastic p-Bits Based on Spin-Orbit Torque Magnetic Tunnel Junctions

p-Bits for Probabilistic Spin Logic

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

[Epidemiology and its use in assessing the practice of diabetology].

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Lanthanide molecular nanomagnets as probabilistic bits

Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs

Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets

Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields

Machine Learning Quantum Systems with Magnetic p-bits

Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit

Integrated probabilistic computer using voltage-controlled magnetic tunnel junctions as its entropy source

Correlated fluctuations in spin orbit torque-coupled perpendicular nanomagnets

Integer factorization using stochastic magnetic tunnel junctions

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing