Grappling with the androgen receptor: a new approach for treating advanced prostate cancer.

T. Thompson

DOI: https://doi.org/10.1016/j.ccr.2010.05.018

IF: 50.3

2010-06-15

Cancer Cell

Abstract:

What problem does this paper attempt to address?

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Anuva Aishwarya,Zhuozhen Cai,Arjun Raghavan,Marisa Romanelli,Xiaoyu Wang,Xu Li,G. D. Gu,Mark Hirsbrunner,Taylor Hughes,Fei Liu,Lin Jiao,Vidya Madhavan

DOI: https://doi.org/10.1126/science.abj8765

2022-01-01

Abstract:Incorporating relativistic physics into quantum tunneling can lead to exotic behavior such as perfect transmission through Klein tunneling. Here, we probed the tunneling properties of spin-momentum-locked relativistic fermions by designing and implementing a tunneling geometry that uses nanowires of the topological Kondo insulator candidate samarium hexaboride. The nanowires are attached to the end of scanning tunneling microscope tips and used to image the bicollinear stripe spin order in the antiferromagnet Fe1.03Te with a Neel temperature of about 50 kelvin. The antiferromagnetic stripes become invisible above 10 kelvin concomitant with the suppression of the topological surface states in the tip. We further demonstrate that the direction of spin polarization is tied to the tunneling direction. Our technique establishes samarium hexaboride nanowires as ideal conduits for spin-polarized currents.
Distinct Composition-Dependent Topological Hall Effect in Mn2-xZnxSb

Md Rafique Un Nabi,Yue Li,Suzanne G E te Velthuis,Santosh Karki Chhetri,Dinesh Upreti,Rabindra Basnet,Gokul Acharya,Charudatta Phatak,Jin Hu

2024-02-17

Abstract:Spintronics, an evolving interdisciplinary field at the intersection of magnetism and electronics, explores innovative applications of electron charge and spin properties for advanced electronic devices. The topological Hall effect, a key component in spintronics, has gained significance due to emerging theories surrounding noncoplanar chiral spin textures. This study focuses on Mn2-xZnxSb, a material crystalizing in centrosymmetric space group with rich magnetic phases tunable by Zn contents. Through comprehensive magnetic and transport characterizations, we found that the high-Zn (x>0.6) samples display THE which is enhanced with decreasing temperature, while THE in the low-Zn (x<0.6) samples show an opposite trend. The coexistence of those distinct temperature dependences for THE suggests very different magnetic interactions/structure for different compositions and underscores the strong coupling between magnetism and transport in Mn2-xZnxSb. Our findings contribute to understanding topological magnetism in centrosymmetric tetragonal lattices, establishing Mn2-xZnxSb as a unique platform for exploring tunable transport effects and opening avenues for further exploration in the realm of spintronics.

Materials Science
Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

Yongxi Ou,Wilson Yanez-Parreño,Yu-sheng Huang,Supriya Ghosh,Cüneyt Şahin,Max Stanley,Sandra Santhosh,Saurav Islam,Anthony Richardella,K. Andre Mkhoyan,Michael E. Flatté,Nitin Samarth

2023-11-21

Abstract:Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin conversion in a canonical topological insulator, Bi$_{1-x}$Sb$_x$, to address this fundamentally unresolved question. We use spin-torque ferromagnetic resonance measurements to accurately probe the charge-to-spin conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$~thin films of high structural quality spanning the entire range of composition, including both trivial and topological band structures, as verified using {\it in vacuo} angle-resolved photoemission spectroscopy. From these measurements, we deduce the effective spin Hall conductivity (SHC) and find excellent agreement with the values predicted by tight-binding calculations for the intrinsic SHC of the bulk bands. These results provide strong evidence that the strong spin-orbit entanglement of bulk states well below the Fermi energy connects directly to the SHC in epitaxial Bi$_{1-x}$Sb$_x$~films interfaced with a metallic ferromagnet. The excellent agreement between theory and experiment points to the generic value of analyses focused entirely on bulk properties, even for topological systems involving non-conserved spin currents.

Mesoscale and Nanoscale Physics
(Invited) Towards Topological Antiferromagnetic Spintronics

Qinglin He,Lei Pan,Koichi Murata,Kang L. Wang

DOI: https://doi.org/10.1149/ma2016-02/31/2058

2016-01-01

ECS Meeting Abstracts

Abstract:Magnetic topological insulators in the tetradymite family, such as Cr/V doped Bi2Se3, Bi2Te3, Sb2Te3, and their ternary compounds, provide a new route for realizing the novel time-reversal symmetry-breaking physics [1, 2]. To effectively manipulate these versatile quantum states, various heterostructures are demonstrated by utilizing the unique Néel order in an antiferromagnet CrSb and the topological order in a magnetic topological insulator Cr-doped (Bi,Sb)2Te3 [3-5] grown by molecular beam epitaxy. It is shown that emergent interfacial magnetic interactions can be tailored through deliberate artificial structural engineering. By investigating bilayers, trilayers, and superlattices made of these two components, interfacial exchange coupling and antiferromagnetic exchange coupling were shown to affect the topological magnetism as mediated by the massive Dirac fermions. The relationship of magnetic spin textures of the antiferromagnet to that of the magnetic topological insulator was further explored through polarized neutron reflectometry/diffraction, magneto-electrical transport measurements as well as the control of the mass of Dirac fermions by using different Cr doping concentrations. From these studies, the antiferromagnet is shown to be an efficient interfacial- and interlayer- exchange coupling layer for the massive Dirac fermions of the magnetic topological insulator, which additionally gives rise to a giant enhancement in magnetic ordering. This work provides a new framework for new topological antiferromagnetic spintronics. *The work was in part supported by the SHINES Center, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award # S000686, National Science Foundation, Army Research Office program under contract 15-1-10561, TANMS, FAME Center, and a Semiconductor Research Corporation program sponsored by MARCO and DARPA. References: [1] Y. L. Chen et al., Science 329, 659 (2010). [2] X.-L. Qi, T. L. Hughes, and S.-C. Zhang, Physical Review B 78, 195424 (2008). [3] X. Kou et al., Nature Communications 6, 8474 (2015). [4] X. Kou et al., Physical Review Letters 113, 137201 (2014). [5] Y. Fan et al., Nature Materials 13, 699 (2014).
Coexistence of Electron and Phonon Topology in Conjunction with Quantum Transport Device Modeling

Anusree C V,Sonali S Pradhan,V Kanchana

DOI: https://doi.org/10.1088/1361-648x/ad1a5b

2024-01-04

Journal of Physics Condensed Matter

Abstract:The escalating research in the field of topology necessitates an understanding of the underlying rich physics behind the materials possessing unique features of non-trivial topology in both electronic and phononic states. Due to the interaction between electronic quasiparticles and spin degrees of freedom, the realization of magnetic topological materials has opened up a new frontier with unusual topological phases, however, these are rarely reported alongside phononic quasiparticle excitations. In this work, by virtue of first principles calculations and symmetry analysis, the intermetallic ferromagnetic compounds MnGaGe and MnZnSb with the coexistence of exceptional topological features in the electronic and phononic states are proposed. These compounds host nodal surface on k y = π plane in bulk Brillouin zone (BZ) in the electronic and phononic spectra protected by the combination of time-reversal symmetry and nonsymmorphic two-fold screw-rotation symmetry. In the former case, spin-polarized nodal surface is present in the majority and minority spin channels and found to be robust to ground-state magnetic polarization. The presence of nodal line features is analyzed in both the quasiparticle spectra, whose non-trivial nature is confirmed by the Berry phase calculation. The incorporation of spin-orbit coupling (SOC) in the electron spectra introduces distinctive characteristics in the transport properties, facilitating the emergence of anomalous Hall conductivity (AHC) by means of Berry curvature (BC) in both bulk and monolayer. Furthermore, the monolayer has been proposed as a two-terminal device model to investigate the quantum transport properties using the non-equilibrium Green's function (NEGF) approach. This superlative combination of observations and modeling sets the path for a greater level of insight into the behavior and aspects of topological materials at the atomic scale.

physics, condensed matter
Engineering Topological Spin Hall Effect in 2D Multiferroic Material

Kaiying Dou,Zhonglin He,Jiangyu Zhao,Wenhui Du,Ying Dai,Baibiao Huang,Yandong Ma

DOI: https://doi.org/10.1002/advs.202407982

IF: 15.1

2024-10-02

Advanced Science

Abstract:Antiferromagnetic topological charge, as well as Lorentz forces acting on conduction electrons, can be coupled with Dzyaloshinskii‐Moriya interaction chirality for antiferromagnetic bimerons in multiferroic lattice. Such coupling guarantees the engineer of topological spin Hall effect in a controllable and reversible fashion. Topological spin Hall effect (TSHE), promoted by coupling between noncoplanar spins and real‐space topology, is a significant phenomenon in condensed matter physics. However, the control of TSHE characteristics is missing due to its intrinsic robustness, and such fundamental difficulty prevents it from being used for spintronics up to now. Here, a rational design approach is demonstrated to engineer TSHE in a controllable and reversible fashion. Through symmetry and model analysis, it is unveiled that antiferromagnetic topological charge, as well as Lorentz forces, acted on conduction electrons, can be coupled with Dzyaloshinskii‐Moriya interaction chirality for antiferromagnetic bimerons in 2D multiferroic materials. Such coupling guarantees the ferroelectric control of TSHE. Using first‐principles calculations and atomic spin model simulations, the validity of this mechanism is further demonstrated in multiferroic monolayer CuCr2Se4 with experimental feasibility. The alter‐chirality of the Dzyaloshinskii‐Moriya interaction is found to play a crucial role in realizing this mechanism. This results extend TSHE to be used in spintronics and open a new direction for spintronics research.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies

Hongyang Ma,James H. Cullen,Serajum Monir,Rajib Rahman,Dimitrie Culcer

2024-05-08

Abstract:The spin-Hall effect underpins some of the most active topics in modern physics, including spin torques and the inverse spin-Hall effect, yet it lacks a proper theoretical description. This makes it difficult to differentiate the SHE from other mechanisms, as well as differentiate band structure and disorder contributions. Here, by exploiting recent analytical breakthroughs in the understanding of the intrinsic spin-Hall effect, we devise a density functional theory method for evaluating the conserved (proper) spin current in a generic system. Spin non-conservation makes the conventional spin current physically meaningless, while the conserved spin current has been challenging to evaluate since it involves the position operator between Bloch bands. The novel method we introduce here can handle band structures with arbitrary degeneracies and incorporates all matrix elements of the position operator, including the notoriously challenging diagonal elements, which are associated with Fermi surface, group velocity, and dipolar effects but often diverge if not treated correctly. We apply this method to the most important classes of spin-Hall materials: topological insulators, 2D quantum spin-Hall insulators, non-collinear antiferromagnets, and strongly spin-orbit coupled metals. We demonstrate that the torque dipole systematically suppresses contributions to the conventional spin current such that, the proper spin current is generally smaller in magnitude and often has a different sign. Remarkably, its energy-dependence is relatively flat and featureless, and its magnitude is comparable in all classes of materials studied. These findings will guide the experiment in characterizing charge-to-spin interconversion in spintronic and orbitronic devices. We also discuss briefly a potential generalisation of the method to calculate extrinsic spin currents generated by disorder scattering.

Mesoscale and Nanoscale Physics
Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

L. Andrew Wray,Suyang Xu,Madhab Neupane,Yuqi Xia,David Hsieh,Dong Qian,Alexei V. Fedorov,Hsin Lin,Susmita Basak,Yew San Hor,Robert J. Cava,Arun Bansil,M. Zahid Hasan

DOI: https://doi.org/10.48550/arXiv.1105.4794

2011-05-24

Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons,Superconductivity
Quantum spin Hall effect in antiferromagnetic topological heterobilayers

Xiangting Hu,Ning Mao,Hao Wang,Ying Dai,Baibiao Huang,Chengwang Niu

DOI: https://doi.org/10.1103/physrevb.103.085109

IF: 3.7

2021-02-08

Physical Review B

Abstract:The quantum spin Hall (QSH) insulator, ensured by the time-reversal (T) symmetry, has been a conceptual milestone of complex topological phases and well known to realize the quantum anomalous Hall effect when T symmetry is broken by introducing ferromagnetism. Here, based on first-principles calculations and a tight-binding model, we show that, unlike previous T-symmetry breaking, the QSH phase can survive under the antiferromagnetic long-range order in a RbCuSe/CsMnP heterobilayer consisting of a nonmagnetic QSH insulator RbCuSe and an antiferromagnetic insulator CsMnP. The calculated spin Chern number, Z2 invariant, and gapless edge state confirm the topological nontrivial phase clearly. Moreover, the role of effective and Rashba spin-orbit coupling and the magnitude of antiferromagnetism are discussed to reveal the underlying physical mechanism. Our results may lead to further scientific and technological advances in topological magnetism and antiferromagnetic spintronics.

physics, condensed matter, applied,materials science, multidisciplinary
Spinor-dominated magnetoresistance driven by the topological phase transition in $\beta $-Ag$_2$Se

Cheng-Long Zhang,Yilin Zhao,Yiyuan Chen,Ziquan Lin,Sen Shao,Zhen-Hao Gong,Junfeng Wang,Hai-Zhou Lu,Guoqing Chang,Shuang Jia

DOI: https://doi.org/10.48550/arxiv.2309.03568

2023-01-01

Abstract: A topological insulator is a quantum material which possesses conducting surfaces and an insulating bulk. Despite extensive researches on the properties of Dirac surface states, the characteristics of bulk states have remained largely unexplored. Here we report the observation of spinor-dominated magnetoresistance anomalies in the topological insulator $\beta $-Ag$_2$Se, induced by a magnetic-field-driven band topological phase transition. These anomalies are caused by intrinsic orthogonality in the wave-function spinors of the last Landau bands of the bulk states, in which backscattering is strictly forbidden during a band topological phase transition. This new type of longitudinal magnetoresistance, purely controlled by the wave-function spinors of the last Landau bands, highlights a unique signature of electrical transport around the band topological phase transition. With further reducing the quantum limit and gap size in $\beta $-Ag$_2$Se, our results may also suggest possible device applications based on this spinor-dominated mechanism and signify a rare case where topology enters the realm of magnetoresistance control.
Spinor-dominated magnetoresistance driven by the topological phase transition in $β$-Ag$_2$Se

Cheng-Long Zhang,Yilin Zhao,Yiyuan Chen,Ziquan Lin,Sen Shao,Zhen-Hao Gong,Junfeng Wang,Hai-Zhou Lu,Guoqing Chang,Shuang Jia

2023-09-07

Abstract:A topological insulator is a quantum material which possesses conducting surfaces and an insulating bulk. Despite extensive researches on the properties of Dirac surface states, the characteristics of bulk states have remained largely unexplored. Here we report the observation of spinor-dominated magnetoresistance anomalies in the topological insulator $\beta $-Ag$_2$Se, induced by a magnetic-field-driven band topological phase transition. These anomalies are caused by intrinsic orthogonality in the wave-function spinors of the last Landau bands of the bulk states, in which backscattering is strictly forbidden during a band topological phase transition. This new type of longitudinal magnetoresistance, purely controlled by the wave-function spinors of the last Landau bands, highlights a unique signature of electrical transport around the band topological phase transition. With further reducing the quantum limit and gap size in $\beta $-Ag$_2$Se, our results may also suggest possible device applications based on this spinor-dominated mechanism and signify a rare case where topology enters the realm of magnetoresistance control.

Mesoscale and Nanoscale Physics,Materials Science
Two-dimensional kagome lattice Zn 2 N 3 as an intrinsic magnetic topological insulator for quantum anomalous Hall effect

Mingxing Li,Jiatian Guo,Hongkuang Yuan,Hong Chen

DOI: https://doi.org/10.1016/j.commatsci.2024.112830

IF: 3.572

2024-02-01

Computational Materials Science

Abstract:Magnetic topological insulators (Chern insulators) have been extensively sought since quantum anomalous Hall effect (QAHE) was experimentally verified. Here, we employ first-principles calculations to predict a kagome lattice Zn 2 N 3 monolayer to be an intrinsic magnetic topological insulator which makes QAHE to be realized. The stable Zn 2 N 3 monolayer is shown to exhibit a large band gap of 3.75 eV in a spin channel and a well known Weyl point near the Fermi level with the Fermi velocity of about 4.2 × 10 5 m s−1 in the other spin channel. Further taking into account the spin–orbit coupling (SOC), the system opens a band gap of 4.3 meV at the Fermi level, and the opening of the band gap brings about a surge in the Berry curvature, which transforms the system into a topological non-trivial state. In addition, the Zn 2 N 3 belongs to the ferromagnetic ground state with out of plane magnetization, and the Curie temperature ( T c ) is estimated to be 168 K by Monte Carlo simulation. Moreover, the tight-binding (TB) model is established to verify the topological properties with the calculated Chern number C = 1, anomalous Hall conductance (AHC) σ x y = e 2 / h , and a dissipation-free chiral edge state. Thus, the kagome Zn 2 N 3 monolayer could be a potential candidate for achieving QAHE and low-power consumption spintronic devices.

materials science, multidisciplinary
From topological nodal-line semimetals to quantum spin Hall insulators in tetragonal SnX monolayers (X=F, Cl, Br, I)

Ye Zhu,Bao Zhao,Yang Xue,Wei Xu,Wenting Xu,Zhongqin Yang

DOI: https://doi.org/10.1088/0256-307x/41/6/067301

2024-05-09

Chinese Physics Letters

Abstract:Two-dimensional (2D) topological materials have recently garnered significant interest due to their profound physical properties and promising applications for future quantum nanoelectronics. Achieving various topological states within one type of materials is, however, seldom reported. Based on first-principles calculations and tight-binding models, we investigate topological electronic states in a novel family of 2D halogenated tetragonal stanene (T-SnX, X = F, Cl, Br, I). All the four monolayers are found being unusual topological nodal-line semimetals (NLSs), protected by a glide mirror symmetry. When spin-orbit coupling (SOC) is turned on, T-SnF and TSnCl are still ascertained as topological NLSs due to the remaining band inversion, primarily composed of Sn p xy orbitals, while T-SnBr and T-SnI become quantum spin Hall insulators. The phase transition is ascribed to moving up in energy of Sn s orbitals and increasing of SOC strengths. The topology origin in the materials is uniformly rationalized through elementary band representations. The robust and diverse topological states found in the 2D T-SnX monolayers position them as an excellent material platform for the development of innovative topological electronics.

physics, multidisciplinary
Topological Hall effect in magnetic topological insulator films

Jian-Xiao Zhang,Domenico Andreoli,Jiadong Zang,Chao-Xing Liu

DOI: https://doi.org/10.1016/j.jmmm.2020.167700

IF: 3.097

2021-06-01

Journal of Magnetism and Magnetic Materials

Abstract:<p>Geometric Berry phase can be induced either by spin-orbit coupling, giving rise to the anomalous Hall effect in ferromagnetic materials, or by chiral spin texture, such as skyrmions, leading to the topological Hall effect. Recent experiments have revealed that both phenomena can occur in topological insulator films with magnetic doping, thus providing us with an intriguing platform to study the interplay between these two phenomena. In this work, we report on a numerical simulation of the anomalous Hall and topological Hall effects in a four-band model that can properly describe the quantum well states in the magnetic topological insulator films by combining Landauer-Büttiker formula and the iterative Green's function method. Our numerical results suggest that spin-orbit coupling in this model plays a different role in the quantum transport in the clean and disordered limits. In the clean limit, spin-orbit coupling mainly influences the longitudinal transport but does not have much effect on topological Hall conductance. In the disordered limit, the longitudinal transport is determined by disorder scattering and spin-orbit coupling is found to affect strongly the topological Hall conductance. This sharp contrast unveils a dramatic interplay between spin-orbit coupling and disorder effect in topological Hall effect in magnetic topological insulator systems.</p>

materials science, multidisciplinary,physics, condensed matter
Intrinsic spin Nernst effect in topological Dirac and magnetic Weyl semimetals

Taiki Matsushita,Akihiro Ozawa,Yasufumi Araki,Junji Fujimoto,Masatoshi Sato

2024-09-20

Abstract:We investigate the intrinsic spin Nernst effect (SNE), a transverse spin current induced by temperature gradients, in topological Dirac semimetals (TDSMs) and magnetic Weyl semimetals (MWSMs) with Ising spin-orbit coupling. The intrinsic SNE is described by the spin Berry curvature, which reflects the geometric nature of TDSMs and MWSMs. We clarified that the intrinsic SNE becomes significant when the Fermi energy is near, but slightly deviates from, the energy of the point nodes. In this situation, Bloch electrons with strong spin Berry curvature contribute to the SNE while avoiding carrier compensation between electrons and holes. We found that in TDSMs with small Fermi surfaces, the spin Nernst angle, which measures the efficiency of the SNE, is larger than that observed in heavy metals. This suggests that TDSMs with small Fermi surfaces can achieve efficient heat-to-spin current conversion. In MWSMs, variation in the magnitude of the exchange coupling with magnetic moments significantly changes the SNE, affecting both the direction and magnitude of the spin Nernst current. This implies that ferromagnetic transitions can be used to reverse the spin Nernst current. These results provide the fundamentals for future topological spin caloritronics.

Materials Science
Intrinsic Spin Nernst Effect and Chiral Edge Modes in van der Waals Ferromagnetic Insulators: Dzyaloshinskii-Moriya vs. Kitaev Interactions

Verena Brehm,Pawel Sobieszczyk,Alireza Qaiumzadeh

2024-09-24

Abstract:The thermomagnetic Nernst effect and chiral edge states are key signatures of nontrivial topology and emerging Berry curvature in magnonic systems. Implementing atomistic spin simulations, we theoretically demonstrate the emergence of chiral magnon edge states at the boundaries of a ferromagnetic hexagonal lattice in the presence of Dzyaloshinskii-Moriya and Kitaev interactions, which are robust against nonlinear magnon interactions. In our simulations, we consider the spin parameters of CrI$_3$ as a prototype of van der Waals magnetic layers. We show that the spin accumulation is reduced in the presence of Kitaev spin interactions compared to systems governed by Dzyaloshinskii-Moriya interactions. This reduction stems from the breaking of the $U(1)$ symmetry, which leads to a shorter spin coherence length imposed by the Kitaev interaction. We propose that measuring the angular dependence of the Nernst signal in a magnetic field provides an effective indirect method for identifying the microscopic origin of topological magnons. Our findings hold promising potential for advancing next-generation energy-harvesting Nernst materials and facilitating the integration of topological magnetic materials with spintronic-based quantum technologies.

Mesoscale and Nanoscale Physics,Other Condensed Matter
A Coherent Physics Picture of Topological Insulators at Single-Particle Level

Yi-Dong Wu

DOI: https://doi.org/10.48550/arXiv.1108.4728

2011-11-14

Abstract:The study of topological property of band insulators is an interesting branch of condensed matter physics. Two types of topologically nontrivial insulators have been extensively studied. The first type is characterized by a nonzero TKNN invariant or Chern number[1] which is directly related to the quantization of Hall conductance in the integer quantum Hall effect. Haledane propose a model with this type of band structure even in the absence of a macroscopic magnetic field[2]. We refer to such materials "Chern insulator". The second type called "Z2 topological insulators" is proposed recently[3, 4]. Quantum spin Hall effect has been predicted and observed in such systems.[5, 6]. Despite the recent intensively study there are still some fundamental problems that aren't quite clear about Z2 insulators even at the single-particle level. For example, it's claimed that Z2 insulators will return to its origin state after two cycles, thus coupling to the reservoirs is important for the Z2 insulators to continuously pump spin[7]. Theoretical and experimental results show quantum spin Hall effect is an edge state transport property of the materials and coupling to the reservoir seems not play an important role. So the Z2 picture is not satisfactory in explaining these phenomena. We study the relationship of the ground states of Z2 insulators and that of Chern insulator. Combined with the results of recent researches on polarization of Chern insulators[8] and topology of edge states[9] we propose a coherent physics picture of topological insulators.

Materials Science
Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films

Madhab Neupane,Anthony Richardella,Jaime Sánchez-Barriga,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Chang Liu,Guang Bian,Duming Zhang,Dmitry Marchenko,Andrei Varykhalov,Oliver Rader,Mats Leandersson,Thiagarajan Balasubramanian,Tay-Rong Chang,Horng-Tay Jeng,Susmita Basak,Hsin Lin,Arun Bansil,Nitin Samarth,M. Zahid Hasan

DOI: https://doi.org/10.48550/arXiv.1404.2830

2014-04-10

Mesoscale and Nanoscale Physics

Abstract:Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We observe strongly binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultra-thin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model which captures this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.
Magnetism-mediated transition between crystalline and higher-order topological phases in NpSb

Ning Mao,Xiangting Hu,Hao Wang,Ying Dai,Baibiao Huang,Yuriy Mokrousov,Chengwang Niu

DOI: https://doi.org/10.1103/physrevb.103.195152

IF: 3.7

2021-05-24

Physical Review B

Abstract:Merging the fields of topology and magnetism expands the scope of fundamental quantum phenomena with novel functionalities for topological spintronics enormously. Here, we theoretically demonstrate that ferromagnetism provides an efficient means to achieve a topological switching between crystalline and higher-order topological insulator phases in two dimensions. Using a tight-binding model and first-principles calculations, we identify layered NpSb as a long-awaited two-dimensional topological crystalline insulator with intrinsic ferromagnetic order with a band gap which is as large as 220 meV. We show that when Mz symmetry is preserved for the out of plane magnetization of this material, it exhibits a pair of gapless edge states along all boundaries and carries a nonzero mirror Chern number CM=1. Remarkably, when rotating the magnetization into the plane a higher-order topological insulator phase with a parity-based invariant ν2D=1 is achieved, and in-gap topological corner states emerge. Our results pave the way to understanding and engineering topological insulating states in two-dimensional ferromagnets.

physics, condensed matter, applied,materials science, multidisciplinary
Spin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers

Nezhat Pournaghavi,Banasree Sadhukhan,Anna Delin

2023-09-08

Abstract:Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect, different phases such as quantum Hall or quantum anomalous Hall(QAH) emerge and display interesting transport properties for spintronic applications. The QAH phase displays sidewall chiral edge states which leads to the QAH effect. In a finite slab, contribution of the surface states depends on both the cross-section and thickness of the system. Having a small cross-section and a thin thickness leads to direct coupling of the surfaces, on the other hand, a thicker slab results in a higher contribution of the non-trivial sidewall states which connect top and bottom surfaces. In this regard, we have considered a heterostructure consisting of a TI, namely Bi2Se3, which is sandwiched between two-dimensional magnetic monolayers of CrI3 to study its topological and transport properties. Combining DFT and tight-binding calculations along with non-equilibrium Green's function formalism, we show that a well-defined exchange gap appears in the band structure in which spin polarised edge states flow. We also study the width and finite-size effect on the transmission and topological properties of this magnetised TI nanoribbon.

Mesoscale and Nanoscale Physics,Materials Science

Grappling with the androgen receptor: a new approach for treating advanced prostate cancer.

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Distinct Composition-Dependent Topological Hall Effect in Mn2-xZnxSb

Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

(Invited) Towards Topological Antiferromagnetic Spintronics

Coexistence of Electron and Phonon Topology in Conjunction with Quantum Transport Device Modeling

Engineering Topological Spin Hall Effect in 2D Multiferroic Material

Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Quantum spin Hall effect in antiferromagnetic topological heterobilayers

Spinor-dominated magnetoresistance driven by the topological phase transition in $\beta $-Ag$_2$Se

Spinor-dominated magnetoresistance driven by the topological phase transition in $β$-Ag$_2$Se

Two-dimensional kagome lattice Zn 2 N 3 as an intrinsic magnetic topological insulator for quantum anomalous Hall effect

From topological nodal-line semimetals to quantum spin Hall insulators in tetragonal SnX monolayers (X=F, Cl, Br, I)

Topological Hall effect in magnetic topological insulator films

Intrinsic spin Nernst effect in topological Dirac and magnetic Weyl semimetals

Intrinsic Spin Nernst Effect and Chiral Edge Modes in van der Waals Ferromagnetic Insulators: Dzyaloshinskii-Moriya vs. Kitaev Interactions

A Coherent Physics Picture of Topological Insulators at Single-Particle Level

Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films

Magnetism-mediated transition between crystalline and higher-order topological phases in NpSb

Spin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers