Abstract:As a critical command center in organisms, the brain can execute multiple intelligent interactions through neural networks, including memory, learning and cognition. Recently, memristive-based neuromorphic devices have been widely developed as promising technologies to build artificial synapses and neurons for neural networks. However, multiple information interactions in artificial intelligence devices potentially pose threats to information security. Herein, a transient form of heterogeneous memristor with a stacked structure of Ag/MgO/SiN x /W is proposed, in which both the reconfigurable resistive switching behavior and volatile threshold switching characteristics could be realized by adjusting the thickness of the SiN x layer. The underlying resistive switching mechanism of the device was elucidated in terms of filamentary and interfacial effects. Representative neural functions, including short-term plasticity (STP), the transformation from STP to long-term plasticity, and integrate-and-fire neuron functions, have been successfully emulated in memristive devices. Moreover, the dissolution kinetics associated with underlying transient behaviors were explored, and the water-assisted transfer printing technique was exploited to build transient neuromorphic device arrays on the water-dissolvable poly(vinyl alcohol) substrate, which were able to formless disappear in deionized water after 10-s dissolution at room temperature. This transient form of memristive-based neuromorphic device provides an important step toward information security reinforcement for artificial neural network applications.

Stochastic switching and analog-state programmable memristor and its utilization for homomorphic encryption hardware

TSSM: Three-State Switchable Memristor Model Based on Ag/TiOx Nanobelt/Ti Configuration

Implementing Hardware Primitives Based on Memristive Spatiotemporal Variability into Cryptography Applications

Fully Resistive In‐Memory Cryptographic Engine with Dual‐Polarity Memristive Crossbar Array

Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing

Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors

Electrocatalytic Hydrolysis-Modulated Multistate Resistive Switching Behaviors in Memristors

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches (adv. Electron. Mater. 3/2018)

Reliable Analog Resistive Switching Behaviors Achieved Using Memristive Devices in AlO X /hfo X Bilayer Structure for Neuromorphic Systems

1-HEMT-1-Memristor With Hardware Encryptor for Privacy-Preserving Image Processing

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Leveraging Stochastic Memristor Devices in Neuromorphic Hardware Systems.

Memristive Monte Carlo DropConnect crossbar array enabled by device and algorithm co-design

Multitasking Memristor for High Performance and Ultralow Power Artificial Synaptic Device Application

Tunable ion energy barrier modulation through aliovalent halide doping for reliable and dynamic memristive neuromorphic systems

Threshold switching memristor-based stochastic neurons for probabilistic computing

Switching Dynamics and Computing Applications of Memristors: an Overview

Low-power, High Speed and High Uniform Switching in AIO<inf>x</inf>-based Memristor using Homogeneous Bilayer Structure for Memcomputing

Homo-layer hafnia-based memristor with large analog switching window

Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security