A chemically amplified fullerene-derivative molecular electron-beam resist.

F. Gibbons,H. M. Zaid,M. Manickam,J. Preece,R. Palmer,A. Robinson
DOI: https://doi.org/10.1002/SMLL.200700324
IF: 13.3
2007-12-03
Small
Abstract:Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
What problem does this paper attempt to address?