Gunn oscillation in GaAs optically triggered by 1.06 µm radiation

R. Chin,K. Nakano,J. Coleman,P. Dapkus
DOI: https://doi.org/10.1109/EDL.1981.25420
IF: 4.8157
1981-10-01
IEEE Electron Device Letters
Abstract:Gunn oscillation triggered by 1.06 µm radiation in an MO-CVD grown GaAlAs-GaAs heterostructure is reported. In these devices, oscillations were found to occur in two separate ranges of bias voltage. The frequency of operation as well as the probability of the initiation of oscillation were found to be dependent upon the excitation beam location.
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