Electron trapping in very thin thermal silicon dioxides

M. Liang,C. Hu
DOI: https://doi.org/10.1109/IEDM.1981.190097
1981-12-01
Abstract:Constant current stress and C-V techniques have been used to study the electron trapping phenomenon in thermally grown thin SiO2films A mathematical model based on trap filling and trap generation is proposed and the capture cross-sections, trap generation rates, the centroids, and the densities of the pre-existing and generated traps are determined as functions of the current density. The generation of interface states is also characterized.
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