A 0.7V single-supply SRAM with 0.495um2 cell in 65nm technology utilizing self-write-back sense amplifier and cascaded bit line scheme

K. Kushida,A. Suzuki,G. Fukano,A. Kawasumi,O. Hirabayashi,Y. Takeyama,T. Sasaki,A. Katayama,Y. Fujimura,T. Yabe

DOI: https://doi.org/10.1109/VLSIC.2008.4585946

2008-06-18

Abstract:A novel SRAM architecture with a high density cell in low supply voltage operation is proposed. A self-write-back sense amplifier realizes cell failure rate improvement by more than two orders of magnitude at 0.6 V. A cascaded bit line scheme saves additional process cost for hierarchical bit line layer. A test chip with 256 kb SRAM utilizing 0.495 um2 cell in 65 nm CMOS technology demonstrated 0.7 V single supply operation.