Evaluation of Ballistic Transport in III–V-Based p-Channel MOSFETs

P. Chang,Xiaoyan Liu,S. Di,G. Du

DOI: https://doi.org/10.1109/TED.2017.2655261

IF: 3.1

2017-01-31

IEEE Transactions on Electron Devices

Abstract:Ballistic transport in III–V semiconductors-based p-channel double-gate MOSFETs is theoretically evaluated. The valence band structure is calculated by solving the eight-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Schrödinger and the Poisson equations self-consistently. A semiclassical ballistic model is employed to assess the hole transport properties. Ballistic characteristics are analyzed as a function of channel material, crystal orientation, and strain effect. The results indicate that Sb-based III–V materials can provide comparable drive current with the Ge counterpart. In addition, (110)/[<inline-formula> <tex-math notation="LaTeX">$\overline {1}10$ </tex-math></inline-formula>] oriented devices exhibit better performance than other surface and transport directions whatever considered material. We also demonstrate that compressively strained GaSb devices outperform relaxed Ge in terms of ballistic current. According to our simulations, as effective oxide thickness scales down to 0.5 nm, both the group IV and III–V p-channel devices can be assumed to operate in the classical capacitance limits, where the <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}_{G}$ </tex-math></inline-formula> characteristics are basically governed by the transport effective mass. As a consequence, <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> enhancement is owing to the reduced transport effective mass whether it results from alternative materials, optimized transport directions, and strain effects.