Abstract:Despite the conspicuous achievements in perovskite solar cells (PSCs), further improvement of the power conversion efficiency (PCE) is hindered by substantially detrimental carrier recombination resulting from the high interfacial charge defect density and inferior charge transport kinetics. Herein, an interface engineering strategy is developed to introduce a Lewis base thiophene or thiazole–modified C3N4 layer at the electron transfer layer (ETL)/perovskite interface to constitute a stepwise energy band alignment and passivate defects at interfaces of the perovskite film. Attributed to its well‐matched energy level with TiO2 and perovskite, the charge extraction efficiency and charge transfer dynamics can be promoted remarkably, greatly inhibiting charge recombination at the interface. Furthermore, thiophene and thiazole can donate the lone pair electrons in S or N atoms to undercoordinated Pb2+, which effectively passivates the electronic trap states caused by halogen vacancies, thereby greatly minimizing trap‐assisted nonradiative recombination in the PSCs. Eventually, the thiazole–C3N4/perovskite‐based devices acquire an outstanding efficiency of 19.23%, supported by an enhanced open‐circuit voltage (VOC) of 1.11 V with improved moisture stability. This work provides an avenue for interfacial energy level modulation and defect passivation strategies for a rational interface microstructure design for meliorating the performance of PSCs. A C3N4 layer functionalized with thiazole is introduced to the electron transfer layer/perovskite interface, which serves as an intermediate energy level to constitute a stepwise energy band alignment and donates the lone pair electrons to undercoordinated Pb2+. Resultantly, it effectively passivates the interfacial defects and promotes carrier transport, thereby further boosting the efficiency of the device.

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Control of Interface Defects for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes Using Nickel Oxide Hole Injection Layer.

Efficient Light-Emitting Diodes Based on Nanocrystalline Perovskite in A Dielectric Polymer Matrix

Additive and Interfacial Control for Efficient Perovskite Light-Emitting Diodes with Reduced Trap Densities

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Halides‐enhanced buried interfaces for stable and extremely low‐voltage‐deficit perovskite solar cells

Polydentate Ligand Reinforced Chelating to Stabilize Buried Interface toward High‐Performance Perovskite Solar Cells

Buried Interfaces in Halide Perovskite Photovoltaics

Engineering the buried interface in perovskite solar cells via lattice-matched electron transport layer

Suppressing Formation of Buried Defects during Annealing Enables Bright Perovskite Light-Emitting Diodes

Improving Green Perovskite Nanoplate Light-Emitting Diode Performance via Precision Passivation and Phase Distribution Management

Target Therapy for Buried Interface Enables Stable Perovskite Solar Cells with 25.05% Efficiency

Thiazole‐Modified C3N4 Interfacial Layer for Defect Passivation and Charge Transport Promotion in Perovskite Solar Cells

Stabilizing perovskite-substrate interfaces for high-performance perovskite modules

Interfacial Passivation Strategy Enabled Efficient Perovskite Quantum Dot Light-Emitting Diodes

Thiazole‐Modified C 3 N 4 Interfacial Layer for Defect Passivation and Charge Transport Promotion in Perovskite Solar Cells

Performance Enhancement of Perovskite Quantum Dot Light-Emitting Diodes via Management of Hole Injection

Surface Modulation of Halide Perovskite Films for Efficient and Stable Solar Cells

High‐Efficiency and Stable Perovskite Solar Cells via Buried Interface Modification with Multi‐Functional Phosphorylcholine Chloride

Phosphine Oxide Derivative as a Passivating Agent to Enhance the Performance of Perovskite Solar Cells

Electronically Manipulated Molecular Strategy Enabling Highly Efficient Tin Perovskite Photovoltaics