Maos non-volatile memory structures with lower bandgap storage layer

F. Stephany,M. Schumacher,P. Balk
DOI: https://doi.org/10.1051/RPHYSAP:019780013012082900
1978-12-01
Abstract:2014 Introduction of a thin Si3N4 layer in metal-Al2O3-SiO2-Si (MAOS) memory structures leads to increased charge storage capability and reduced writing voltages for these MANOS structures. O2 annealing significantly affects these properties and the charging mechanism. Preliminary results on charge retention are presented. REVUE DE PHYSIQUE APPLIQUEE TOME 13, DECEMBRE 1978,
What problem does this paper attempt to address?