Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites.

Yinglu Tang,Yinglu Tang,Z. M. Gibbs,Luis A. Agapito,Luis A. Agapito,Guodong Li,Guodong Li,Guodong Li,Hyun-Sik Kim,Hyun-Sik Kim,Hyun-Sik Kim,M. Nardelli,S. Curtarolo,G. J. Snyder,G. J. Snyder

DOI: https://doi.org/10.1038/nmat4430

IF: 41.2

2015-12-01

Nature Materials

Abstract:

What problem does this paper attempt to address?

Temperature-Dependent Band Renormalization in CoSb 3 Skutterudites Due to Sb-Ring-Related Vibrations

Ziyu Wang,Jinyang Xi,Jinyan Ning,Kai Guo,Bo Duan,Jun Luo,G. Jeffrey Snyder,Jiong Yang,Wenqing Zhang

DOI: https://doi.org/10.1021/acs.chemmater.0c04517

IF: 10.508

2021-01-25

Chemistry of Materials

Abstract:The temperature-dependent electronic structures in the thermoelectric semiconductor CoSb3 and its Yb-filled counterpart are studied by using the electron–phonon renormalization (EPR) method, considering both lattice expansion and phonon-induced atomic vibrations. The primary direct band gaps at the Γ-point for skutterudites decrease with increasing temperature, largely due to the increase in the energy level at the valance band maximum (VBM). The energy difference between the conduction band minimum (CBM) and second CB also decreases with temperature, inducing band convergence at high temperatures. The phonon vibrations of the Sb rings are responsible for these temperature-dependent electronic structures. Specifically, the four Sb-ring-related Ag phonon mode in CoSb3 plays a decisive role in causing the increase in the VBM with temperature and decrease in the primary band gap. The band convergence at high temperatures is due to the different responses to lattice vibrations of the second CB and the CBM for both systems. Our work sheds light on the relation between chemical bonds and phonon-assisted electronic structures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c04517?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c04517</a>.EBSs and band gaps of CoSb3 and Yb0.25Co4Sb12 at different temperatures, primary band gaps of CoSb3 from AIMD simulations and hybrid HSE functional calculations; phonon spectra and phonon DOSs of CoSb3 and Yb0.25Co4Sb12 at different temperatures, volume and volumetric expansion coefficient as functions of the temperature for CoSb3 and Yb0.25Co4Sb12, absolute energy levels for VBM and CBM as functions of the phonon Tu (7.72 THz) mode amplitude in the CoSb3 primitive cell, absolute energy levels for VBM and CBM as functions of the temperature for Yb0.25Co4Sb12, and contour picture of the charge density difference near the Sb triangle along the (111) direction in the CoSb3 conventional cell (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04517/suppl_file/cm0c04517_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Zhuang-Hao Zheng,Xiao-Lei Shi,Dong-Wei Ao,Wei-Di Liu,Yue-Xing Chen,Fu Li,Shuo Chen,Xiao-Qing Tian,Xin-Ru Li,Jing-Yi Duan,Hong-Li Ma,Xiang-Hua Zhang,Guang-Xing Liang,Ping Fan,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.nanoen.2020.105683

IF: 17.6

2021-03-01

Nano Energy

Abstract:Owing to the earth-abundancy, eco-friendliness and high thermoelectric performance, CoSb3 skutterudites have been employed in thermoelectric devices with a high energy conversion efficiency. However, the thermoelectric performance of CoSb3-based thin films is still relatively low within the medium temperature range. In this work, we report a record high ZT of ~0.65 at 623 K in the n-type Ag/In co-doped CoSb3 thin films, fabricated by a facile magnetron sputtering technique. Extensive characterizations and computational results indicate both Ag and In as fillers prefer to occupy the interstitial sites in the CoSb3 lattice. A 0.2% Ag doping induces impurity states in the band structure of CoSb3, boosts the density-of-states near the Fermi level and enhances the absolute Seebeck coefficient up to ~198 μV K-1. Simultaneously, a 4.2% In doping further tunes the bandgap, increases the electrical conductivity up to ~75 S cm-1, and contributes to an optimized power factor of ~2.94 μW cm-1 K-2 at 623 K. In addition, these interstitial dopants accompanying with dense grain boundaries contribute an ultra-low thermal conductivity of ~0.28 W m-1 K-1 at 623 K, leading to a high ZT in the film system. This work demonstrates that rational band engineering and structural manipulations can achieve high performance in n-type CoSb3-based thin films, which possess full potential for applying to miniature thermoelectric devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Solubility design leading to high figure of merit in low-cost Ce-CoSb3 skutterudites

Yinglu Tang,Riley Hanus,Sinn-wen Chen,G. Jeffrey Snyder

DOI: https://doi.org/10.1038/ncomms8584

IF: 16.6

2015-07-20

Nature Communications

Abstract:CoSb3-based filled skutterudite has emerged as one of the most viable candidates for thermoelectric applications in automotive industry. However, the scale-up commercialization of such materials is still a challenge due to the scarcity and cost of constituent elements. Here we study Ce, the most earth abundant and low-cost rare earth element as a single-filling element and demonstrate that, by solubility design using a phase diagram approach, the filling fraction limit (FFL) x in CexCo4Sb12 can be increased more than twice the amount reported previously (x=0.09). This ultra-high FFL (x=0.20) enables the optimization of carrier concentration such that no additional filling elements are needed to produce a state of the art n-type skutterudite material with a zT value of 1.3 at 850 K before nano-structuring. The earth abundance and low cost of Ce would potentially facilitate a widespread application of skutterudites.

multidisciplinary sciences
A review of CoSb3-based skutterudite thermoelectric materials

Zhi-Yuan Liu,Jiang-Long Zhu,Xin Tong,Shuo Niu,Wen-Yu Zhao

DOI: https://doi.org/10.1007/s40145-020-0407-4

IF: 11.534

2020-08-15

Journal of Advanced Ceramics

Abstract:Abstract The binary skutterudite CoSb 3 is a narrow bandgap semiconductor thermoelectric (TE) material with a relatively flat band structure and excellent electrical performance. However, thermal conductivity is very high because of the covalent bond between Co and Sb, resulting in a very low ZT value. Therefore, researchers have been trying to reduce its thermal conductivity by the different optimization methods. In addition, the synergistic optimization of the electrical and thermal transport parameters is also a key to improve the ZT value of CoSb 3 material because the electrical and thermal transport parameters of TE materials are closely related to each other by the band structure and scattering mechanism. This review summarizes the main research progress in recent years to reduce the thermal conductivity of CoSb 3 -based materials at atomic-molecular scale and nano-mesoscopic scale. We also provide a simple summary of achievements made in recent studies on the non-equilibrium preparation technologies of CoSb 3 -based materials and synergistic optimization of the electrical and thermal transport parameters. In addition, the research progress of CoSb 3 -based TE devices in recent years is also briefly discussed.

materials science, ceramics
Valence bands convergence in p -type CoSb 3 through electronegative fluorine filling

Xiege Huang,Jialiang Li,Haoqin Ma,Changlong Li,Tianle Liu,Bo Duan,Pengcheng Zhai,Guodong Li

DOI: https://doi.org/10.1088/0256-307x/41/7/077102

2024-06-21

Chinese Physics Letters

Abstract:Band convergence is considered to be a strategy with clear benefits for thermoelectric performance, generally favoring the co-optimization of conductivity and Seebeck coefficients, and the conventional means include elemental filling to regulate the band. However, the influence of the most electronegative fluorine on the CoSb 3 band remains unclear. In this paper, DFT calculations show that the valence band maximum gradually shifts downward with the increase of fluorine filling, lastly the valence band maximum converges to the highly degenerated secondary valence bands in F-filled skutterudites. The effective degeneracy near the secondary valence band promotes more valleys to participate in electric transport, leading to a more than threefold carrier mobility and nearly twofold effective mass for F 0.1 Co 4 Sb 12 compared to Co 4 Sb 12 . This work provides a new and promising route to boost the thermoelectric properties of p-type skutterudites.

physics, multidisciplinary
Enhanced High-Temperature Thermoelectric Performance in Te-Doped Electronegative Element-Filled Skutterudites via Suppressing Bipolar Effects and Enhanced Phonon Scattering

Zhixing Chen,Minhui Yuan,Jingyi Lyu,Wenwei Yang,Zijie Ren,Jingfeng Li,Zhanpeng Zhao,Hailong Yang,Jing Shuai,Yanglong Hou

DOI: https://doi.org/10.1021/acsami.4c11635

IF: 9.5

2024-09-14

ACS Applied Materials & Interfaces

Abstract:CoSb(3)-based skutterudites have great potential as midtemperature thermoelectric (TE) materials due to their low cost and excellent electrical and mechanical properties. Their application, however, is limited by the high thermal conductivity and the degradation of TE performance at elevated temperatures, attributed to the adverse effects of bipolar diffusion. Herein, a series of Se(y)Co(4)Sb(12-x)Te(x) compounds were successfully synthesized by combining a solid-state reaction and spark plasma...

materials science, multidisciplinary,nanoscience & nanotechnology
Multiple-Filling-Induced Full-Spectrum Phonon Scattering and Band Convergence Leading to High-Performance n-Type Skutterudites

Jialun Zhang,Lixia Zhang,Wei Ren,Wenqin Gou,Juncheng Zhang,Huiyuan Geng

DOI: https://doi.org/10.1021/acsami.1c06267

2021-06-16

Abstract:Filling guest atoms into the nanovoids of skutterudite compounds provides effective scattering for low-frequency phonons to reduce the lattice thermal conductivity. However, it is still difficult to simultaneously realize the full-spectrum phonon scattering and band engineering in the n-type skutterudites with higher thermoelectric performance. Here, we reveal that the combination of five types of element atoms in the lattice nanovoids brings about dense dislocations, abundant precipitated nanoparticles, and electronic band convergence in the n-type skutterudites. The Seebeck coefficient shows an increase with little deterioration on the carrier mobility due to the enhanced density of states near the Fermi level, leading to a 11% enhancement in the power factor at 823 K. The lattice thermal conductivity is significantly reduced to approach the glass limit due to the full-spectrum phonon scattering. As a result, a peak ZT value of about 1.7 at 823 K and an average ZT value of about 1.2 from 323 to 823 K are obtained. High thermoelectric performance combined with the structural optimization enables the simulated maximum energy conversion efficiency of the skutterudite module to reach up to 15.0%. Our finding opens a new dimension for doping atoms to achieve simultaneous optimization of electrical and thermal properties in polynary thermoelectric materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c06267?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c06267</a>.Materials and Methods; microstructure evolution mechanisms during the synthesis of n-type skutterudites; calculation of the electronic band structures; calculation of the lattice thermal conductivity; calculation of the actual energy conversion efficiency of the skutterudite thermoelectric module; anharmonicity parameters of filling elements; fitting parameters for the multiple-filled skutterudites; TEM images of dislocation loops; TEM images of dislocation walls; microstructure evolution from melt-spinning ribbons to bulk skutterudite materials; scanning TEM–EDS elemental mapping images of the precipitated nanoparticles; electronic band structures of Yb0.25Co4Sb12 and Ca0.25Co4Sb12; electronic band structures of Yb0.25In0.125Co3.75Fe0.25Sb12 and Yb0.25Al0.125In0.125Co3.75Fe0.25Sb12; energy dependence of the total electronic DOS; In-atom-centered maximally localized Wannier functions in the InCo4Sb12 crystal; BSE images of the resynthesized multiple-filled sample after three times of measurements or heat treatment; thermoelectric performance of the resynthesized multiple-filled sample after three times of measurements or heat treatment; thermoelectric performance parameters of n-type and p-type skutterudites used in the thermoelectric module simulation model; maximum output power and maximum energy conversion efficiency as a function of the geometry parameters of the thermoelectric leg; and hot-side temperature dependence of the internal resistance of the unicouple (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c06267/suppl_file/am1c06267_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Enhanced Thermoelectric Performance in Ternary Skutterudite Co(Ge 0.5 Te 0.5 ) 3 via Band Engineering

Suneesh Meledath Valiyaveettil,Duc-Long Nguyen,Deniz P. Wong,Cheng-Rong Hsing,Laura Paradis-Fortin,Mohammad Qorbani,Amr Sabbah,Ta-Lei Chou,Kuei-Kuan Wu,Vasudevan Rathinam,Ching-Ming Wei,Li-Chyong Chen,Kuei-Hsien Chen

DOI: https://doi.org/10.1021/acs.inorgchem.1c03947

IF: 4.6

2022-03-03

Inorganic Chemistry

Abstract:We report the phase evolution and thermoelectric properties of a series of Co(Ge0.5Te0.5)3-xSbx (x = 0-0.20) compositions synthesized by mechanical alloying. Pristine ternary Co(Ge0.5Te0.5)3 skutterudite crystallizes in the rhombohedral symmetry (R3̅), and Sb doping induces a structural transition to the cubic phase (ideal skutterudite, Im3̅). The Sb substitution increases the carrier concentration while maintaining a high thermopower even at higher doping levels owing to an increased effective mass. The exceptional electronic properties exhibited by Co(Ge0.5Te0.5)3 upon doping are attributed to the carrier transport from both the primary and secondary conduction bands, as shown by theoretical calculations. The enhanced electrical conductivity and high thermopower increase the power factor by more than 20 times. Because the dominant phonon propagation modes in binary skutterudites are associated with the vibrations of pnictogen rings, twisting the latter through the isoelectronic replacement of Sb4 rings with Ge2Te2 ones, as done in this study, can effectively reduce the thermal conductivity. This leads to an increase in the dimensionless figure-of-merit (zT) by a factor of 30, reaching 0.65 at 723 K for Co(Ge0.5Te0.5)2.9Sb0.1.

chemistry, inorganic & nuclear
Impurity Removal Leading to High-Performance CoSb 3 -Based Skutterudites with Synergistic Carrier Concentration Optimization and Thermal Conductivity Reduction

Xu-Guang Li,Wei-Di Liu,Shuang-Ming Li,Dou Li,Hong Zhong,Zhi-Gang Chen

DOI: https://doi.org/10.1021/acsami.1c16622

2021-11-04

Abstract:Thermoelectric properties of CoSb3-based skutterudites are greatly determined by the removal of detrimental impurities, such as (Fe/Co)Sb2, (Fe/Co)Sb, and Sb. In this study, we use a facile temperature gradient zone melting (TGZM) method to synthesize high-performance CoSb3-based skutterudites by impurity removal. After removing metallic or semimetallic impurities (Fe/Co)Sb, (Fe/Co)Sb2, and Sb, the carrier concentration of TGZM-Ce0.75Fe3CoSb12 can be reduced to 1.21 × 1020 cm-3 and the electronic thermal conductivity dramatically reduced to 0.7 W m-1 K-1 at 693 K. Additionally, removing these impurities also effectively reduces the lattice thermal conductivity from 7.2 W m-1 K-1 of cast-Ce0.75Fe3CoSb12 to 1.02 W m-1 K-1 of TGZM-Ce0.75Fe3CoSb12 at 693 K. As a consequence, TGZM-Ce0.75Fe3CoSb12 approaches a high power factor of 11.7 μW cm-1 K-2 and low thermal conductivity of 1.72 W m-1 K-1 at 693 K, leading to a peak zT of 0.48 at 693 K, which is 10 times higher than that of cast-Ce0.75Fe3CoSb12. This study indicates that our facile TGZM method can effectively synthesize high-performance CoSb3-based skutterudites by impurity removal and set up a solid foundation for further development.

materials science, multidisciplinary,nanoscience & nanotechnology
Dual occupations of sulfur induced band flattening and chemical bond softening in p-type S Co4Sb12-2S2 skutterudites

Jialiang Li,Xiaolian Zhang,Haoqin Ma,Bo Duan,Guodong Li,Jiong Yang,Hongtao Wang,Houjiang Yang,Ling Zhou,Pengcheng Zhai

DOI: https://doi.org/10.1016/j.jmat.2021.05.003

IF: 8.589

2022-01-01

Journal of Materiomics

Abstract:The electronegative filling in skutterudites not only broadened the scope of filling atoms, but also facilitated the preparation of p-type skutterudites. However, the introduction of a single sulfur atom in the Co4Sb12 cannot be achieved without charge compensation through the traditional equilibrium method. In the present study, the dual occupations of S-atoms by self-charge compensation were shown as the most stable forms under high pressure, and a series of p-type S y Co4Sb12−2y S2y skutterudites was successfully prepared by high-pressure-high-temperature (HPHT) method. The electronic structures and transport properties of as-obtained materials were investigated, and the related mechanisms were explored. The results suggested that the presence of S-impurities led to flattening of the electronic band that led to a higher Seebeck coefficient. The S-doped Co4Sb12 displayed lower elastic modulus, elastic constant, and Debye temperature, thus indicating the chemical bond softening in skutterudites. The thermal conductivities of S y Co4Sb12−2y S2y compounds reduced monotonously with the increase in S-content. This study provides a new and promising avenue for optimizing the thermoelectric properties of p-type Co4Sb12.

materials science, multidisciplinary,chemistry, physical,physics, applied
Global band convergence design for high-performance thermoelectric power generation in Zintls

Xin Shi,Shaowei Song,Guanhui Gao,Zhifeng Ren

DOI: https://doi.org/10.1126/science.adn7265

IF: 56.9

2024-05-18

Science

Abstract:Electronic band convergence can have a beneficial impact on thermoelectric performance, but finding the right band-converged compositions is still time-consuming. We propose a method for designing a series of compositions with simultaneous band convergence in the high-entropy Yb x Ca 1− x Mg y Zn 2− y Sb 2 material by zeroing the weighted sum of crystal-field splitting energies of the parent compounds. We found that so-designed compositions have both larger power factors and lower thermal conductivities and that one of these compositions exhibits a large thermoelectric figure of merit value in comparison with to other p-type Zintls. Our material shows high stability both thermally and temporally. We then assembled an all-Zintl single-stage module, nontoxic and free of tellurium, that demonstrates an exceptional heat-to-electricity conversion efficiency exceeding 10% at a temperature difference of 475 kelvin.

multidisciplinary sciences
Significant enhancement of electrical conductivity by incorporating carbon fiber into CoSb3 thermoelectric skutterudite fabricated by spark plasma sintering method

Ridwone Hossain,Al Jumlat Ahmed,Frank. F. Yun,Lina Sang,Sheik Md Kazi Nazrul Islam,Guangsai Yang,Michael B. Cortie,Xiaolin Wang

DOI: https://doi.org/10.1007/s10853-021-06588-5

IF: 4.5

2021-10-15

Journal of Materials Science

Abstract:The effects of carbon fiber additions on the electrical and thermoelectric performance in p-type CoSb3-based skutterudite are reported. A threefold enhancement in electrical conductivity is found. Two different explanations for the increased electrical conductivity are considered: Either carbon atoms enter the CoSb3 lattice as a dopant that makes it more and more conductive, or the increase in conductivity is due to electrical percolation of the carbon fibers in the composite. X-ray diffraction data show that the lattice parameter of the CoSb3 is not affected by the presence of the carbon fiber; however, adding carbon is associated with precipitation of 20 wt. % elemental Sb. DFT calculations show that the enthalpy of formation of a solid solution of carbon (interstitial or as a substitution for Sb) is slightly positive. This would be offset by an increased entropy contribution at higher temperatures, so the free energy change overall is likely to be favorable. All of the results support an explanation based on an improved electrical conductivity of a very dilute solid solution of C in CoSb3. The average thermoelectric parameters of the composite material, including heat conductivity, average composite Seebeck coefficient, Hall effect, carrier mobility, and carrier concentration, were influenced by the carbon addition. Unfortunately, the effects largely cancel each other so that the overall zT of the composite was not improved.

materials science, multidisciplinary
High-Entropy Strategy to Achieve Electronic Band Convergence for High-Performance Thermoelectrics

Kai Li,Liang Sun,Wei Bai,Ni Ma,Chenxi Zhao,Jiyin Zhao,Chong Xiao,Yi Xie

DOI: https://doi.org/10.1021/jacs.4c04048

IF: 15

2024-01-01

Journal of the American Chemical Society

Abstract:Multiband convergence has attracted significant interest due to its positive effects on further improving thermoelectric performance. However, the current research mainly focuses on two- or three-band convergence in lead chalcogenides through doping and alloying. Therefore, exploring a new strategy to facilitate more-band convergence has instructive significance and practical value in thermoelectric research. Herein, we first propose a high-entropy strategy to achieve four-band convergence for optimizing thermoelectric performance. Taking high-entropy AgSbPbSnGeTe5 as an example, we found that the emergence of more-band convergence occurs as the configuration entropy increases; in particular, the four-band convergence occurs in high-entropy AgSbPbSnGeTe5. The overlap of multiatom orbitals in the high-entropy sample contributes to the convergence of four valence bands, promoting the improvement of electrical performance. Meanwhile, due to large lattice distortion and disordered atoms, the phonon mean free path is effectively compressed, resulting in low lattice thermal conductivity of high-entropy AgSbPbSnGeTe5. Consequently, AgSbPbSnGeTe5 achieved an intrinsically high ZT value of 1.22 at 673 K, providing a cornerstone for further optimizing thermoelectric performance. For example, by generally optimizing the carrier concentration, a peak ZT value of ∼1.75 at 723 K is achieved. These insights offer a comprehensive understanding of the band structure affected by unique structures of high-entropy materials and also shed useful light on innovation mechanisms and functionalities for future improvement of thermoelectric performance.
Ultrahigh thermoelectric power factor achieved in Yb filled CoSb 3 skutterudites through additional Al doping

Xiaohui Pang,Mingkai He,Fudong Zhang,Beiquan Jia,Weishuai Wang,Xiaofang Cao,Mingzhen Song,Xiaolian Chao,Zupei Yang,Di Wu

DOI: https://doi.org/10.1016/j.cej.2023.148457

IF: 15.1

2024-01-03

Chemical Engineering Journal

Abstract:Cage-like CoSb 3 skutterudites has received widespread attentions due to its low cost, moderate band gap and nearly independent electron–phonon regulation. Unfortunately, recent researches revealed that external fillers occupying the icosahedral voids of Co-Sb framework might cause localized lattice distortion and strain which put extra difficulty for charge carrier transport. Here, we took use of additional Al atoms with smaller atomic radii to substitute Sb atoms in Yb single filled CoSb 3 for the purpose of alleviating the local strain cause by Yb filling. It was found that trace amount of additional Al doping can significantly improve the carrier mobility from 33.9 cm 2 V 1 s −1 for Yb 0.25 Co 4 Sb 12 to 49.8 cm 2 V -1 s −1 for Al 0.03 Yb 0.25 Co 4 Sb 12 , resulting in an ultrahigh power factor of 72.0 μWcm -1 K −2 at 873 K in the later sample. Our findings might shed light on future studies on optimizing the thermoelectric performance of CoSb 3 -based skutterudites and other material systems.

engineering, chemical, environmental
Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Sen Xie,Xiaolin Wan,Yasong Wu,Chunxia Li,Fan Yan,Yujie Ouyang,Haoran Ge,Xianda Li,Yong Liu,Rui Wang,Michael Y Toriyama,G Jeffrey Snyder,Jiong Yang,Qingjie Zhang,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1002/adma.202400845

Abstract:Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.
CoSb 3 -Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Dongwei Ao,Fu Li,Yuexing Chen,Jingting Luo,Guangxing Liang,Zhuanghao Zheng,Xiang-Hua Zhang,Ping Fan

DOI: https://doi.org/10.1021/acsaem.1c00795

IF: 6.4

2021-04-27

ACS Applied Energy Materials

Abstract:Flexible thin-film thermoelectric devices have been extensively studied for powering wearable electronics, particularly as a power source for self-powered sensors or temperature detection. Skutterudite CoSb3 is emerging as one of the most studied candidate materials for thermoelectric applications. This work is focused on comprehensive optimization in terms of CoSb3-based thin films as well as electrode materials and structures with the objective to fabricate high-performance flexible devices. CoSb3-based thin films with nanoparticles for the enhancement of phonon scattering have been fabricated using the vacuum sputtering method. N-type and P-type thin films can be obtained by appropriate doping with Ti and In, respectively. It has been demonstrated that a multilayer structure of electrodes can greatly enhance the thermoelectric performance of thermoelectric devices by increasing the output power and the thermal stability of the device in the air atmosphere. It has also been demonstrated the possibility of obtaining a relatively high output voltage of above 90 mV and a high-power density of 0.46 mW/cm2 at a current intensity of about 0.35 mA with the device. Therefore, many applications can be considered. The thin-film thermoelectric device has also been tested as a thermal sensor, and it exhibits fast responsivity, with a reaction time of a few hundreds of milliseconds, as well as high stability.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.1c00795?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.1c00795</a>.Detailed experimental section, device measurements, XRD analysis, and SEM morphology (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.1c00795/suppl_file/ae1c00795_si_001.pdf">PDF</a>).This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Spin-Orbit-Coupling-Induced Topological Transition and Anomalously Strong Intervalley Scattering in Two-Dimensional Bismuth Allotropes with Enhanced Thermoelectric Performances

Yujie Xia,Ao Wu,Ben Li,Juan Zhang,Yiming Zhang,Lei Peng,Hezhu Shao,Yan Cen,Zengxu Wang,Shangdong Liu,Yimu Ji,Zhan Sui,Heyuan Zhu,Hao Zhang

DOI: https://doi.org/10.1021/acsami.2c20760

IF: 9.5

2023-04-12

ACS Applied Materials & Interfaces

Abstract:The convergence of multivalley bands is originally believed to be beneficial for thermoelectric performance by enhancing the charge conductivity while preserving the Seebeck coefficients, based on the assumption that electron interband or intervalley scattering effects are totally negligible. In this work, we demonstrate that β-Bi with a buckled honeycomb structure experiences a topological transition from a normal insulator to a Z(2) topological insulator induced by spin-orbit coupling, which...

materials science, multidisciplinary,nanoscience & nanotechnology
Strong intervalley electron-phonon couplings in monolayer antimonene: revisited studies on the band-convergence strategy to enhance thermoelectricity

Yu Wu,Congcong Ma,Jiang Cao,Ke Xu,Ying Chen,Zixuan Lu,Hao Zhang,Hezhu Shao,Heyuan Zhu,Bowen Hou,Zhaoxi Fang,Rongjun Zhang

2020-01-01

Abstract:The strategy of band convergence of multi-valley conduction bands or multi-peak valence bands has been successfully used to understand or help researchers design more efficient thermoelectric materials, or guide the discovery of new thermoelectric materials. However, the phonon-assisted intervalley scatterings due to multiple band degeneracy are generally neglected in the traditional context of band-convergence stategy, owning to computational simplifications or experimental difficulties. However, the electron-phonon coupling may play the key role in determining the electronic part of thermoelectric figure of merits. In this work, by using first-principles method, we investigated in details the (thermo)electric properties of monolayer $\beta$- and $\alpha$-antimonene (Sb) considering full mode-resolved electron-phonon interactions. Our calculations reveal strong intervally-scattering between the nearly degenerate electronic valley states in both $\beta$- and $\alpha$-Sb, and the deformation potential approximation based on the coupling between valley electrons and longitudinal acoustic phonons fails to describe accurately the electron-phonon scattering and thermoelectric transport properties in these multi-valley non-polar systems. As a result, by considering full electron-phonon interactions based on the rigid-band approximation, the maximum value of thermoelectric figure of merit $zT$ at room temperature reduces to 0.37 in $\beta$-Sb, by a factor of 5.7 comparing to what is predicted based on the constant relaxiation-time approximation. Our work shows that the band convergence of multi-valley is less beneficial in materials where the intervalley scattering is strong.
Structure and Chemical Bond of Thermoelectric Ce-Co-Sb Skutterudites

XM Min,HL Hong,JM An,CW Nan

2001-01-01

Abstract:The correlations among composition, structure, chemical bond and thermoelectric property of skutterudites CoSb3 and CeCo5Fe3Sb12 have been studied by using density function and discrete variation (DFT-DVM) method. Three models for this study were proposed and calculated by which the "rattling" pattern was described. Model 1 is with Ce in the center, model 2 is with Ce away the center and near to Sb, and model 3 is also with Ce away the center but near to Fe. The calculated results show that in model 3, the ionic bond is the strongest, but the covalent bond is the weakest. Due to the different changes between ionic and covalent bond, there is less difference in the stability among the models 1, 2 and 3. Therefore, these different models can exist at the same time, or can translate from one to another more easily. In other words, the "rattling" pattern has taken place. Unfilled model of CoSb3, without Ce and Fe, is called model 4. The covalent bond of Co-Sb or Fe-Sb in models 1, 2 and 3 is weaker than that of Co-Sb in model 4, as some electrical cloud of Sb takes part in the covalent bond of Ce-Sb in the filled models. The result is consistent with the experimental result that the thermal conductivity of CeCo5Fe3Sb12 is lower than that of CoSb3, and the thermoelectric property of CeCo5Fe3Sb12 is superior to that of CoSb3.
Low Thermal Conductivity and Enhanced Thermoelectric Performance in in and Lu Double-Filled Cosb3 Skutterudites

G. D. Tang,Z. H. Wang,X. N. Xu,Y. He,L. Qiu,Y. W. Du

DOI: https://doi.org/10.1007/s11664-010-1477-9

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:The thermoelectric properties of indium (In) and lutetium (Lu) double-filled skutterudites In (x) Lu (y) Co4Sb12 prepared by high-pressure synthesis were investigated in detail from 4 K to 365 K. Our results indicate that In and Lu double filling can remarkably reduce the thermal conductivity, and substantially improve the thermoelectric performance. A thermoelectric figure of merit of ZT = 0.27 for In0.13Lu0.05Co4.02Sb12 was achieved at 365 K, being larger by one order of magnitude than that for CoSb3. It is thought that the large difference in resonance frequencies of the In and Lu elements broadens the range of normal phonon scattering in the multifilled skutterudites, helping to achieve an even lower lattice thermal conductivity. This investigation suggests that an effective way to improve the thermoelectric performance of skutterudite materials is to use In and Lu double filling.

Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites.

Temperature-Dependent Band Renormalization in CoSb 3 Skutterudites Due to Sb-Ring-Related Vibrations

Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films

Solubility design leading to high figure of merit in low-cost Ce-CoSb3 skutterudites

A review of CoSb3-based skutterudite thermoelectric materials

Valence bands convergence in p -type CoSb 3 through electronegative fluorine filling

Enhanced High-Temperature Thermoelectric Performance in Te-Doped Electronegative Element-Filled Skutterudites via Suppressing Bipolar Effects and Enhanced Phonon Scattering

Multiple-Filling-Induced Full-Spectrum Phonon Scattering and Band Convergence Leading to High-Performance n-Type Skutterudites

Enhanced Thermoelectric Performance in Ternary Skutterudite Co(Ge 0.5 Te 0.5 ) 3 via Band Engineering

Impurity Removal Leading to High-Performance CoSb 3 -Based Skutterudites with Synergistic Carrier Concentration Optimization and Thermal Conductivity Reduction

Dual occupations of sulfur induced band flattening and chemical bond softening in p-type S Co4Sb12-2S2 skutterudites

Global band convergence design for high-performance thermoelectric power generation in Zintls

Significant enhancement of electrical conductivity by incorporating carbon fiber into CoSb3 thermoelectric skutterudite fabricated by spark plasma sintering method

High-Entropy Strategy to Achieve Electronic Band Convergence for High-Performance Thermoelectrics

Ultrahigh thermoelectric power factor achieved in Yb filled CoSb 3 skutterudites through additional Al doping

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

CoSb 3 -Based Thin-Film Thermoelectric Devices with High Performance Via Electrode Optimization

Spin-Orbit-Coupling-Induced Topological Transition and Anomalously Strong Intervalley Scattering in Two-Dimensional Bismuth Allotropes with Enhanced Thermoelectric Performances

Strong intervalley electron-phonon couplings in monolayer antimonene: revisited studies on the band-convergence strategy to enhance thermoelectricity

Structure and Chemical Bond of Thermoelectric Ce-Co-Sb Skutterudites

Low Thermal Conductivity and Enhanced Thermoelectric Performance in in and Lu Double-Filled Cosb3 Skutterudites