VIB-3 high-performance Si permeable-base transistors

D. Rathman,R. Mountain

DOI: https://doi.org/10.1109/T-ED.1985.22378

IF: 3.1

1985-11-01

IEEE Transactions on Electron Devices

Abstract:Good performance in three-terminal devices using am~wphous semiconductor material can hardly be achieved due to low carrier mobility and short life time in the amorphous films. However, the amorphous films are attractive because they offer such fea.:ures as 1) a low-temperature process, 2) easy and inexpensive fabnication, and 3) a wider bandgap than the crystalline material. Recently, a Si bipolar transistor with an amorphous emitter has been t1 ied [l]. A previous study on a solar cell with an amorphous S ic I H/crystalline Si p+-n heterostructure [2] confirmed that good electrical performance can be achieved in such a heterostructure. A s a successive development of this heterostructure, an HBT cons .sting of a-Sic : H emitter and crystalline Si has been realized for the first time and its performance and band structure will be discussed here. Conventional Si process was used for fabrication. A base window was cut into the field oxide formed on a 3-5 fi . cm (111) p s i substrate and 31p+ ions were implanted for base with a dose of 2 X 10” ionskm’. Next, an emitter window (area of 4.18 X em2) was cut into a wet oxide and amorphous S ic : H film was e‘eposited using SiH4, CH,, and BzH6 gases at a substrate tempe:.ature of 450°C in an inductive coupled plasma CVD system. A1 dectrode for emitter was fabricated and using this as a mask the 3-SiC : H film was etched by CF, plasma etching. Finally, the base and collector A1 electrodes were formed. Satisfactory transistor operation was clearly observe1 with a common emitter current gain of 50 at a current density 01’ approximately 2.4 A/Cm2. The hFE-Ic characteristics measured at VcE = 5 V for various temperatures (27OC-97”C) are flat over tEe current range of 10-6-10-4 A without any significant decrease 01’ the gain in the lower current values. The temperature characteris tics show a strong dependence of temperature on the gain, and it increases with increasing temperature. Such a behavior coud be explained by a fairly large activation energy of the emitter material. We could estimate the band structure of a-Sic : H/c-Si heterostruc ture from h,/T-l/Tplots. Considering the electron affinity of a-Si(: : H to be close to that of Si and assuming the bandgap of a-Sic : H t.1 be equal to its optical gap of 1.8 eV [2], it can be deducted from the proposed band structure that the discontinuity of the conduction band AEc = 0.16 eV and that of the valence band A E y = 0.54 eV. A Si p-n-p heterobipolar transistor using an a-Sic : H enlitter has been realized for the first time. We are continuing this study for np-n type as well, in which a higher hFB can be expectec. from the view-point of barrier height difference for holes and e1:ctrons as predicted by the band diagram.