Abstract:Good performance in three-terminal devices using am~wphous semiconductor material can hardly be achieved due to low carrier mobility and short life time in the amorphous films. However, the amorphous films are attractive because they offer such fea.:ures as 1) a low-temperature process, 2) easy and inexpensive fabnication, and 3) a wider bandgap than the crystalline material. Recently, a Si bipolar transistor with an amorphous emitter has been t1 ied [l]. A previous study on a solar cell with an amorphous S ic I H/crystalline Si p+-n heterostructure [2] confirmed that good electrical performance can be achieved in such a heterostructure. A s a successive development of this heterostructure, an HBT cons .sting of a-Sic : H emitter and crystalline Si has been realized for the first time and its performance and band structure will be discussed here. Conventional Si process was used for fabrication. A base window was cut into the field oxide formed on a 3-5 fi . cm (111) p s i substrate and 31p+ ions were implanted for base with a dose of 2 X 10” ionskm’. Next, an emitter window (area of 4.18 X em2) was cut into a wet oxide and amorphous S ic : H film was e‘eposited using SiH4, CH,, and BzH6 gases at a substrate tempe:.ature of 450°C in an inductive coupled plasma CVD system. A1 dectrode for emitter was fabricated and using this as a mask the 3-SiC : H film was etched by CF, plasma etching. Finally, the base and collector A1 electrodes were formed. Satisfactory transistor operation was clearly observe1 with a common emitter current gain of 50 at a current density 01’ approximately 2.4 A/Cm2. The hFE-Ic characteristics measured at VcE = 5 V for various temperatures (27OC-97”C) are flat over tEe current range of 10-6-10-4 A without any significant decrease 01’ the gain in the lower current values. The temperature characteris tics show a strong dependence of temperature on the gain, and it increases with increasing temperature. Such a behavior coud be explained by a fairly large activation energy of the emitter material. We could estimate the band structure of a-Sic : H/c-Si heterostruc ture from h,/T-l/Tplots. Considering the electron affinity of a-Si(: : H to be close to that of Si and assuming the bandgap of a-Sic : H t.1 be equal to its optical gap of 1.8 eV [2], it can be deducted from the proposed band structure that the discontinuity of the conduction band AEc = 0.16 eV and that of the valence band A E y = 0.54 eV. A Si p-n-p heterobipolar transistor using an a-Sic : H enlitter has been realized for the first time. We are continuing this study for np-n type as well, in which a higher hFB can be expectec. from the view-point of barrier height difference for holes and e1:ctrons as predicted by the band diagram.

Adult-onset exercise intolerance due to phosphorylase b kinase deficiency

Impact of duration of perioperative antibiotic prophylaxis on development of fracture-related infection in open fractures

Treatment of localized primary gastric lymphoma.

Duration of antibiotic treatment and risk of recurrence after surgical management of orthopaedic device infections: a multicenter case-control study

Antibiotic prophylaxis in surgery for closed fracture of the hand

[Dental implants: cost-effectiveness analysis].

Determination of Apparent K(m) Values for Ribulose 1,5-Bisphosphate Carboxylase/Oxygenase (Rubisco) Activase Using the Spectrophotometric Assay of Rubisco Activity.

Prophylactic Antibiotic Choice and Deep Infection in Lower Extremity Endoprosthetic Reconstruction: Comparison of Cefazolin, Cefazolin-Vancomycin, and Alternative Regimens

Preoperative antibiotics reduce early surgical site infections after orthopaedic implant removal: a propensity-matched cohort study

Incidence and risk factors for surgical site infection following open reduction and internal fixation of adult tibial plateau fractures

Incidence and risks for surgical site infection after closed tibial plateau fractures in adults treated by open reduction and internal fixation: a prospective study

VIB-3 high-performance Si permeable-base transistors

Incidence and risk factors for surgical site infection after open reduction and internal fixation of intra‐articular fractures of distal femur: A multicentre study

Surgical site infection after open reduction and internal fixation of tibial plateau fractures

The prevention of infection in open fractures. An experimental study of the effect of antibiotic therapy.

Duration of surgical antibiotic prophylaxis and surgical site infection in orthopaedic surgery: A prospective cohort study

Wound infection following implant removal of foot, ankle, lower leg or patella; a protocol for a multicenter randomized controlled trial investigating the (cost-)effectiveness of 2 g of prophylactic cefazolin compared to placebo (WIFI-2 trial)

Does prophylactic local tobramycin injection lower open fracture infection rates?

Comparison of Surgical Site Infection After Instrumented Spine Surgery in Patients With High Risk of Infection According to Different Antibiotic Prophylaxis Protocols: A Cohort Study of 132 Patients With a Minimum Follow-Up of 1 year

Risk factors for surgical site infections following open reduction and internal fixation in patients with tibial plateau fractures

Incidence and risk factors for deep surgical site infection after open reduction and internal fixation of closed tibial plateau fractures in adults