A new phase of the two-dimensional ReS 2 sheet with tunable magnetism

Zhongti Sun,Haifeng Lv,Zhiwen Zhuo,Abdul Jalil,Wenhua Zhang,Xiaojun Wu,Jinlong Yang

DOI: https://doi.org/10.1039/c7tc05303g

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:A new trimer phase of 2D ReS 2 with tunable magnetism is reported by using first-principles calculations.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

A New Phase of the Two-Dimensional ReS2 Sheet with Tunable Magnetism

Zhongti Sun,Haifeng Lv,Zhiwen Zhuo,Abdul Jalil,Wenhua Zhang,Xiaojun Wu,Jinlong Yang

DOI: https://doi.org/10.1039/c7tc05303g

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:The two-dimensional (2D) rhenium disulfide crystal is well known to have an in-plane motif of parallel diamond-shaped chains (DT phase), leading to its significant anisotropy in terms of electrical and optical properties, and great potential applications in field-effect transistors, digital converters and photodetectors. On the basis of first-principles calculations, here, we report a new distorted phase of the 2D ReS2 sheet with tunable magnetic properties. Distinctly different from the well-known diamond-shaped chain structure in the DT phase, Re atoms form a uniform-distributed trimer in the distorted phase (Tri phase). The transition from the DT to the Tri phase can be induced with either electron doping or lithium atom intercalating. Both phonon spectrum calculations and Born-Oppenheimer molecular dynamic simulation at room temperature confirm the high structural stability of the Tri-phase ReS2 sheet. In particular, the Tri-phase ReS2 sheet is a bipolar magnetic semiconductor with a bandgap of 1.63 eV by using the hybrid HSE06 method, which can be further turned into half metals with ambipolar spin polarization via carrier doping. The estimated Curie temperature of the ReS2 sheet with the Tri phase is about 157 K, which can be further enhanced to 357 K via carrier doping. Much more interesting, it also has a huge magnetic anisotropy energy of 5.716 meV per Re atom due to the direct ferromagnetic coupling between Re atoms. The novel magnetic properties of the distorted phase of the ReS2 sheet present a potential applicability in nanoscale spintronics with the electrical-manipulation of spin-polarization orientation.
Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Wen Wen,Yiming Zhu,Xuelu Liu,Hung-Pin Hsu,Zhen Fei,Yanfeng Chen,Xinsheng Wang,Mei Zhang,Kuan-Hung Lin,Fei-Sheng Huang,Yi-Ping Wang,Ying-Sheng Huang,Ching-Hwa Ho,Ping-Heng Tan,Chuanhong Jin,Liming Xie

DOI: https://doi.org/10.1002/smll.201603788

IF: 13.3

2017-01-01

Small

Abstract:2D black phosphorus (BP) and rhenium dichalcogenides (ReX2, X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor environmental stability, ReX2 has low-symmetry distorted 1T structures with excellent stability. In ReX2, the electronic structure is weakly dependent on layer numbers, which restricts their property tunability and device applications. Here, the properties are tuned, such as optical bandgap, Raman anisotropy, and electrical transport, by alloying 2D ReS2 and ReSe2. Photoluminescence emission energy of ReS2(1-x)Se2x monolayers (x from 0 to 1 with a step of 0.1) can be continuously tuned ranging from 1.62 to 1.31 eV. Polarization behavior of Raman modes, such as ReS2-like peak at 212 cm(-1), shifts as the composition changes. Anisotropic electrical property is maintained in ReS2(1-x)Se2x with high electron mobility along b-axis for all compositions of ReS2(1-x)Se2x.
Tunable ferromagnetic ordering in phosphorus adsorbed ReS 2 nanosheets

Junfu Li,Zhongxin Liao,Baorui Xia,Tongtong Wang,Daqiang Gao

DOI: https://doi.org/10.1088/1361-6528/abb62a

IF: 3.5

2020-11-24

Nanotechnology

Abstract:Abstract Layered transition metal dichalcogenides (TMDs) are considered as promising materials for electronic, optoelectronic and spintronic devices due to their outstanding properties. Herein, based on rhenium disulfide (ReS 2 ) nanosheets, we realized the intrinsic room temperature ferromagnetism with the adsorption of P adatoms (P-ReS 2 ). Experiments indicate that the saturation magnetization ( M s ) can be tuned by the P ratios, where the maximum M s can reach up to 0.0174 emu g −1 . Besides, density functional theory (DFT) calculation results demonstrate that the strong hybridization between Re d and P p orbitals is the main reason of inducing ferromagnetism in P-ReS 2 system. This work provides a novel method to engineer the magnetism of TMDs, endowing them with the possibility of spintronic applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Yalan Yan,Chunlin Jin,Jia Wang,Tianru Qin,Fangfei Li,Kai Wang,Yonghao Han,Chunxiao Gao

DOI: https://doi.org/10.1021/acs.jpclett.7b01031

2017-01-01

Abstract:The transition metal dichalcogenide (TMD) ReS2 is a promising material for optoelectronic devices because of its remarkable quantum yield. Pressure can effectively tune the optoelectronic properties of TMDs through control of the atomic displacement. Here, we systematically investigated the lattice and electronic structural evolutions of compressed multilayer ReS2. Both Raman spectra and first-principles calculations suggest the occurrence of an intralayer phase transition followed by an interlayer transition. A transition from one indirect to another indirect bandgap at 2.7 GPa was revealed by both high-pressure photoluminescence (PL) measurements and first-principles calculations, this behavior was elucidated by considering the fundamental relationship between lattice variation and electronic evolution. Moreover, by comparing the high-pressure behavior of MoS2 and ReS2, we demonstrated interlayer coupling plays a critical role in determining the lattice and electronic structures in compressed TMDs. Our findings suggest the potential application of ReS2 in fabricating various stacking devices with tailored properties.
Distorted Monolayer ReS2 with Low-Magnetic-Field Controlled Magnetoelectricity.

Jinlei Zhang,Shuyi Wu,Yun Shan,JunHong Guo,Shuo Yan,Shuyu Xiao,Chunbing Yang,Jiancang Shen,Jian Chen,Lizhe Liu,Xinglong Wu

DOI: https://doi.org/10.1021/acsnano.8b09058

IF: 17.1

2019-01-01

ACS Nano

Abstract:Two dimensional (2D) materials possessing ferroelectric/ferromagnetic orders and especially low-magnetic-field controlled magnetoelectricity have great promise in spintronics and multistate data storage. However, ferroelectric and magnetoelectric (ME) dipoles in the atom-thick 2D materials are difficult to be realized due to structural inversion symmetry, thermal actuation, and depolarized field. To overcome these difficulties, the monolayer structure must possess an in-plane inversion asymmetry in order to provide out-of-plane ferroelectric polarization. Herein, crystal chemistry is adopted to engineer specific atomic displacement in monolayer ReS2 to change the crystal symmetry to induce out-of-plane ferroelectric polarization at room temperature. The cationic Re vacancy in the atom-displaced ReS2 monolayer causes spin polarization of two immediate neighbor sulfur atoms to generate magnetic ordering, and the ferroelectric distortion near the Re vacancy locally tunes the ferromagnetic order thereby triggering low-magnetic-field controlled ME polarization at about 28 K. As a result, 2D ME coupling multiferroics is achieved. Our results not only reveal a design methodology to attain coexistence of ferroelectric and ferromagnetic orders in 2D materials but also provide insights into magnetoelectricity in 2D materials.
Pressure-induced Metallization and Superconducting Phase in ReS2

Dawei Zhou,Yonghui Zhou,Chunying Pu,Xuliang Chen,Pengchao Lu,Xuefei Wang,Chao An,Ying Zhou,Feng Miao,Ching-Hwa Ho,Jian Sun,Zhaorong Yang,Dingyu Xing

DOI: https://doi.org/10.1038/s41535-017-0023-x

IF: 6.856

2017-01-01

npj Quantum Materials

Abstract:Among the family of TMDs, ReS2 takes a special position, which crystalizes in a unique distorted low-symmetry structure at ambient conditions. The interlayer interaction in ReS2 is rather weak, thus its bulk properties are similar to that of monolayer. However, how does compression change its structure and electronic properties is unknown so far. Here using ab initio crystal structure searching techniques, we explore the high-pressure phase transitions of ReS2 extensively and predict two new high-pressure phases. The ambient pressure phase transforms to a "distorted-1T" structure at very low pressure and then to a tetragonal I41/amd structure at around 90 GPa. The "distorted-1T" structure undergoes a semiconductor-metal transition (SMT) at around 70 GPa with a band overlap mechanism. Electron-phonon calculations suggest that the I41/amd structure is superconducting and has a critical superconducting temperature of about 2 K at 100 GPa. We further perform high-pressure electrical resistance measurements up to 102 GPa. Our experiments confirm the SMT and the superconducting phase transition of ReS2 under high pressure. These experimental results are in good agreement with our theoretical predictions.
Identifying the Ground State Geometry of a MoN2 Sheet Through a Global Structure Search and Its Tunable P-Electron Half-Metallicity

Cunzhi Zhang,Junyi Liu,Haoming Shen,Xin-Zheng Lo,Qiang Sun

DOI: https://doi.org/10.1021/acs.chemmater.7b01606

IF: 10.508

2017-01-01

Chemistry of Materials

Abstract:MoN2 and MoS2 sheets are representatives of two-dimensional transition metal dinitrides and dichalcogenides, respectively. Their similarity in atomic ratios misled people to make an incorrect assumption in previous studies that the former adopts the geometry of the latter. However, compared with S, N is smaller and has fewer valence electrons, and N is more effective in mediating magnetic couplings; therefore, a different geometry and different properties can be expected for the MoN2 sheet. Here using a global structure search, for the first time we have identified the ground state geometry of this sheet named Tetra-MoN2 that is much more stable than the H phase proposed previously. Different from the metallic nature of H-MoN2, Tetra-MoN2 is a semiconductor having an indirect band gap of 1.41 eV with a flexible strain tunability. In particular, Tetra-MoN2 can exhibit rich half-metallic behaviors mediated by the polarized p electron of N and induced by low-concentration hole doping and small strains that a...
Phase-Engineering-Induced Generation and Control of Highly Anisotropic and Robust Excitons in Few-Layer ReS 2 .

Jinlei Zhang

DOI: https://doi.org/10.1021/acs.jpclett.7b01029

2017-01-01

Abstract:The anisotropic exciton behavior in two-dimensional materials induced by spin-a orbit coupling or anisotropic spatial confinement has been exploited in imaging applications. Herein, we propose a new strategy to generate high-energy and robust anisotropic excitons in few-layer ReS2 nanosheets by phase engineering. This approach overcomes the limitation imposed by the layer thickness, enabling production of visible polarized photoluminescence at room temperature. Ultrasonic chemical exfoliation is implemented to introduce the metallic T phase of ReS2 into the few-layer semiconducting Td nanosheets. In this configuration, light excitation can readily produce "hot" electrons to tunnel to the Td phase via the metal-semiconductor interface to enhance the overlap between the wave functions and screened Coulomb interactions. Owing to the strong electron hole interaction, significant increase in the optical band gap is observed. Highly anisotropic and tightly bound excitons with visible light emission (1.5-2.25 eV) are produced and can be controlled by tailoring the T phase concentration. This novel strategy allows manipulation of polarized optical information and has great potential in optoelectronic devices.
Intrinsic 2D-XY Ferromagnetism in a Van Der Waals Monolayer

Amilcar Bedoya-Pinto,Jing-Rong Ji,Avanindra K. Pandeya,Pierluigi Gargiani,Manuel Valvidares,Paolo Sessi,James M. Taylor,Florin Radu,Kai Chang,Stuart S. P. Parkin

DOI: https://doi.org/10.1126/science.abd5146

IF: 56.9

2021-01-01

Science

Abstract:The physics and universality scaling of phase transitions in low-dimensional systems has historically been a topic of great interest. Recently, two-dimensional (2D) materials exhibiting intriguing long-range magnetic order have been in the spotlight. Although an out-of-plane anisotropy has been shown to stabilize 2D magnetic order, the demonstration of a 2D magnet with in-plane rotational symmetry has remained elusive. We constructed a nearly ideal easy-plane system, a single CrCl3 monolayer on graphene/6H-SiC(0001), and observed robust ferromagnetic ordering with critical scaling characteristic of a 2D-XY system. These observations indicate the realization of a finite-size Berezinskii-Kosterlitz-Thouless phase transition in a large-area, quasi-free-standing van der Waals monolayer magnet with an XY universality class. This offers a material platform to host 2D superfluid spin transport and topological magnetic textures.
The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

Texture Lin

2024-05-29

Abstract:Due to the excellent physical properties, two dimensional materials have attracted widespread attention from researchers. In this article, we discuss a transition metal dichalcogenide, ReSeS monolayer with 1T" phase, with extremely low symmetry through the first principles calculation. It belongs to the space group P1 and has Jauns structure. Due to the broken of the central inversion symmetry. Raman and infrared active modes in the vibrational spectrum no longer mutually exclusive, which has become a spectral fingerprint of this material. First principles calculation indicates that the bandgap decreases when the material has geometric deformation, and we propose two models to explain this phenomenon and provide the physical pictures. The first model requires constructing a low symmetry Wannier analytically simplify Hamiltonian to obtain 4 energy levels of mixed orbital, Then the changes of bandgap can be qualitatively described through the difference between these energy levels; The second model analyzes the variations of bandgap through the bonding or antibonding characteristics of the valence and conduction band. We point out that it is a "saturation effect", where the energy of the valence and conduction band has difficulties in further changing under the deformation, resulting in the reduction of the bandgap under both compression and tensile deformation. Meanwhile, we discuss a metallic phase of ReSeS, called 1T' phase, to explain the formation of the bandgap. Compared to the 1T" phase, it has higher symmetry. Semi-filled d-orbital bands in 1T' phases will become unstable and split into bonding and antibonding bands, leading to the opening of bandgap. This process is also known as Peierls phase transition. Finally, we calculated the effective mass of electron and the absorption spectrum. Results point out the potential of ReSeS in the preparation of electrical or optical devices.

Materials Science
Electrically tunable second harmonic generation in atomically thin ReS2

Jing Wang,Nannan Han,Zheng-Dong Luo,Mingwen Zhang,Xiaoqing Chen,Yan Liu,Yue Hao,Jianlin Zhao,Xuetao Gan

DOI: https://doi.org/10.1021/acsnano.2c00514

2022-06-07

Abstract:Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than one order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.

Optics
The Exchange Between Anions and Cations Induced by Coupled Plasma and Thermal Annealing Treatment for Room-Temperature Ferromagnetism

Shuyi Wu,Jinlei Yao,Ju Gao,Yun Shan,Lizhe Liu

DOI: https://doi.org/10.1039/d2cp00379a

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:Two-dimensional (2D) materials, with outstanding magnetic properties at room temperature, are highly desirable for the future spintronic and nanoscale electronic industry. However, most of the 2D systems are not of magnetic nature due to thermal fluctuations. Herein, we propose a novel strategy to induce robust room-temperature ferromagnetism in the originally nonmagnetic 2D ReS2 by the exchange between anions and cations. The vacancies are created by argon plasma treatment, which lowers the formation energy of point defects. The subsequent annealing facilitates the movement of the cations into the anion sites, giving rise to antisite defects, which leads to a significant increase in the magnetization. First-principles calculations demonstrate that the point defect with respect to the antisite substitution from Re to S is responsible for the extraordinary room-temperature ferromagnetism. This work opens a new door to the design of spin electronic structures by controllable antisite defects.
"Extraordinary" Phase Transition Revealed in a van der Waals Antiferromagnet

Xiaoyu Guo,Wenhao Liu,Jonathan Schwartz,Suk Hyun Sung,Dechen Zhang,Makoto Shimizu,Aswin L. N. Kondusamy,Lu Li,Kai Sun,Hui Deng,Harald O. Jeschke,Igor I. Mazin,Robert Hovden,Bing Lv,Liuyan Zhao

2023-09-03

Abstract:While the surface-bulk correspondence has been ubiquitously shown in topological phases, the relationship between surface and bulk in Landau-like phases is much less explored. Theoretical investigations since 1970s for semi-infinite systems have predicted the possibility of the surface order emerging at a higher temperature than the bulk, clearly illustrating a counterintuitive situation and greatly enriching phase transitions. But experimental realizations of this prediction remain missing. Here, we demonstrate the higher-temperature surface and lower-temperature bulk phase transitions in CrSBr, a van der Waals (vdW) layered antiferromagnet. We leverage the surface sensitivity of electric dipole second harmonic generation (SHG) to resolve surface magnetism, the bulk nature of electric quadrupole SHG to probe bulk spin correlations, and their interference to capture the two magnetic domain states. Our density functional theory calculations show the suppression of ferromagnetic-antiferromagnetic competition at the surface responsible for this enhanced surface magnetism. Our results not only show unexpected, richer phase transitions in vdW magnets, but also provide viable ways to enhance magnetism in their 2D form.

Materials Science
Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

Enze Zhang,Peng Wang,Zhe Li,Haifeng Wang,Chaoyu Song,Ce Huang,Zhigang Chen,Lei Yang,Kaitai Zhang,Shiheng Lu,Weiyi Wang,Shanshan Liu,Hehai Fang,Xiaohao Zhou,Hugen Yan,Jin Zou,Xiangang Wan,Peng Zhou,Weida Hu,Faxian Xiu

DOI: https://doi.org/10.1021/acsnano.6b04165

IF: 17.1

2016-01-01

ACS Nano

Abstract:Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 107 and a well-developed current saturation in the current–voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperature...
Defect-assisted reversible phase transition in mono- and few-layer ReS$_2$

George Zograf,Andrew B. Yankovich,Betül Küçüköz,Abhay V. Agrawal,Alexander Yu. Polyakov,Joachim Ciers,Fredrik Eriksson,Åsa Haglund,Paul Erhart,Tomasz J. Antosiewicz,Eva Olsson,Timur O. Shegai

2024-05-21

Abstract:Transition metal dichalcogenide (TMD) materials have attracted substantial interest due to their remarkable excitonic, optical, electrical, and mechanical properties, which are highly dependent on their crystal structure. Controlling the crystal structure of these materials is essential for fine-tuning their performance, $\textit{e.g.}$, linear and nonlinear optical, as well as charge transport properties. While various phase-switching TMD materials, like molybdenum telluride (MoTe$_2$), are available, their transitions are often irreversible. Here, we investigate the mechanism of a light-induced reversible phase transition in mono- and bilayer flakes of rhenium disulfide (ReS$_2$). Our observations, based on scanning transmission electron microscopy, nonlinear spectroscopy, and density functional theory calculations, reveal a transition from the ground T$''$ (double distorted T) to the metastable H$'$ (distorted H) phase under femtosecond laser irradiation or influence of highly-energetic electrons. We show that the formation of sulfur vacancies facilitates this phenomenon. Our findings pave the way towards actively manipulating the crystal structure of ReS$_2$ and possibly its heterostructures.

Optics,Materials Science
Anisotropy of two-dimensional ReS2 and advances in its device application

Ya-Di Cao,Ying-Hui Sun,Su-Fei Shi,Rong-Ming Wang

DOI: https://doi.org/10.1007/s12598-021-01781-6

IF: 6.318

2021-07-02

Rare Metals

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted growing interest regarding their potential applications in next-generation electronic and optoelectronic devices. Owing to their atomic thickness and tunable bandgap, they exhibit unique mechanical, electrical, and optical properties. As a specific member of the TMDC family, rhenium disulfide (ReS2) has stimulated intensive interest due to its anisotropic crystal structure, weak inter-layer coupling, and anisotropic electrical and optical properties. In this review, we summarize the distinct crystal structure and intrinsic anisotropic properties of ReS2, followed by an introduction to its synthesis methods. The current applications of ReS2 and its heterojunctions are presented based on its anisotropic properties. This review not only provides a timely summary of the current applications of ReS2 and its heterojunctions, but also inspires new approaches to develop other innovative devices based on 2D materials with a low lattice symmetry.Graphical abstract

materials science, multidisciplinary,metallurgy & metallurgical engineering
Controlling topology through targeted composite symmetry manipulation in magnetic systems

Ilyoun Na,Marc Vila,Sinéad M. Griffin

DOI: https://doi.org/10.1103/PhysRevB.110.205104

2024-11-09

Abstract:The possibility of selecting magnetic space groups by orienting the magnetization direction or tuning magnetic orders offers a vast playground for engineering symmetry protected topological phases in magnetic materials. In this work, we study how selective tuning of symmetry and magnetism can influence and control the resulting topology in a 2D magnetic system, and illustrate such procedure in the ferromagnetic monolayer MnPSe$_3$. Density functional theory calculations reveals a symmetry-protected accidental semimetalic (SM) phase for out-of-plane magnetization which becomes an insulator when the magnetization is tilted in-plane, reaching band gap values close to $100$ meV. We identify an order-two composite antiunitary symmetry and threefold rotational symmetry that induce the band crossing and classify the possible topological phases using symmetry analysis, which we support with tight-binding and $\mathbf{k}\cdot\mathbf{p}$ models. Breaking of inversion symmetry opens a gap in the SM phase, giving rise to a Chern insulator. We demonstrate this explicitly in the isostructural Janus compound Mn$_2$P$_2$S$_3$Se$_3$, which naturally exhibits Rashba spin-orbit coupling that breaks inversion symmetry. Our results map out the phase space of topological properties of ferromagnetic transition metal phosphorus trichalcogenides and demonstrate the potential of the magnetization-dependent metal-to-insulator transition as a spin switch in integrated two-dimensional electronics.

Mesoscale and Nanoscale Physics
Tunable anisotropy in ReS 2 flakes achieved by Ar + ion bombardment probed by polarized Raman spectroscopy

Jing Yu,Yingying Wang,Jie Jiang,Yao Liang,Yinjie Liu,Bo Zhong,Sufeng Quan,Mengfan Zhou,Zhenhua Ni,Shuai Guo

DOI: https://doi.org/10.1063/5.0053903

IF: 4

2021-08-02

Applied Physics Letters

Abstract:Crystal-orientation-dependent properties in low symmetric two-dimensional material ReS2 have inspired its novel applications in photonics, electronics, and optoelectronics. In this work, Ar+ ion bombardment is used to treat ReS2 with different thicknesses, and different amounts of defect densities are introduced in ReS2 flakes. Angular dependent polarized Raman spectra is used to probe the change in anisotropy. The intensities of mode V exhibit maximum and minimum intensities with incident polarization along the b-axis and perpendicular. The intensity ratio Imin/Imax is used as a quantity to detect the change in anisotropy. It is found that with the same defect density, the change in anisotropy in 1-layer (L) ReS2 is the highest among ReS2 flakes; thus, 1L ReS2 is susceptible to ion bombardment. With an increase in the defect density in 1L ReS2, an increase in the Imin/Imax value is observed. A phenomenological model is established to understand the quantitative relationship between defect density and anisotropy, and the isotropic scattering range associated with defects is obtained. The results here provide ways of quantitatively understanding anisotropy by angular polarized Raman spectroscopy as well as ways of tuning anisotropy in two-dimensional anisotropic materials by ion bombardments.

physics, applied
ReS2‐Based Field‐Effect Transistors and Photodetectors

Enze Zhang,Yibo Jin,Xiang Yuan,Weiyi Wang,Cheng Zhang,Lei Tang,Shanshan Liu,Peng Zhou,Weida Hu,Faxian Xiu

DOI: https://doi.org/10.1002/adfm.201500969

IF: 19

2015-01-01

Advanced Functional Materials

Abstract:Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS2 field‐effect transistors is reported via the encapsulation of ReS2 nanosheets in a high‐κ Al2O3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate‐tunable photoresponsivity up to 16.14 A W−1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe2, GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics.
Electrically Tunable Second Harmonic Generation in Atomically Thin ReS 2

Jing Wang,Nannan Han,Zheng-Dong Luo,Mingwen Zhang,Xiaoqing Chen,Yan Liu,Yue Hao,Jianlin Zhao,Xuetao Gan

DOI: https://doi.org/10.1021/acsnano.2c00514

IF: 17.1

2022-04-15

ACS Nano

Abstract:Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than 1 order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

A new phase of the two-dimensional ReS 2 sheet with tunable magnetism

A New Phase of the Two-Dimensional ReS2 Sheet with Tunable Magnetism

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Tunable ferromagnetic ordering in phosphorus adsorbed ReS 2 nanosheets

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Distorted Monolayer ReS2 with Low-Magnetic-Field Controlled Magnetoelectricity.

Pressure-induced Metallization and Superconducting Phase in ReS2

Identifying the Ground State Geometry of a MoN2 Sheet Through a Global Structure Search and Its Tunable P-Electron Half-Metallicity

Phase-Engineering-Induced Generation and Control of Highly Anisotropic and Robust Excitons in Few-Layer ReS 2 .

Intrinsic 2D-XY Ferromagnetism in a Van Der Waals Monolayer

The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

Electrically tunable second harmonic generation in atomically thin ReS2

The Exchange Between Anions and Cations Induced by Coupled Plasma and Thermal Annealing Treatment for Room-Temperature Ferromagnetism

"Extraordinary" Phase Transition Revealed in a van der Waals Antiferromagnet

Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

Defect-assisted reversible phase transition in mono- and few-layer ReS$_2$

Anisotropy of two-dimensional ReS2 and advances in its device application

Controlling topology through targeted composite symmetry manipulation in magnetic systems

Tunable anisotropy in ReS 2 flakes achieved by Ar + ion bombardment probed by polarized Raman spectroscopy

ReS2‐Based Field‐Effect Transistors and Photodetectors

Electrically Tunable Second Harmonic Generation in Atomically Thin ReS 2