Abstract:Single-frequency ultranarrow linewidth on-chip microlasers with a fast wavelength tunability play a game-changing role in a broad spectrum of applications ranging from coherent communication, light detection and ranging, to metrology and sensing. Design and fabrication of such light sources remain a challenge due to the difficulties in making a laser cavity that has an ultrahigh optical quality (Q) factor and supports only a single lasing frequency simultaneously. Here, we demonstrate a unique single-frequency ultranarrow linewidth lasing mechanism on an erbium ion-doped lithium niobate (LN) microdisk through simultaneous excitation of high-Q polygon modes at both pump and laser wavelengths. As the polygon modes are sparse within the optical gain bandwidth compared with the whispering gallery mode counterpart, while their Q factors (above 10 million) are even higher due to the significantly reduced scattering on their propagation paths, single-frequency lasing with a linewidth as narrow as 322 Hz is observed. The measured linewidth is three orders of magnitude narrower than the previous record in on-chip LN microlasers. Finally, enabled by the strong linear electro-optic effect of LN, real-time electro-optical tuning of the microlaser with a high tuning efficiency of similar to 50 pm/100 V is demonstrated.

Widely tunable 780 nm distributed feedback laser based on high-order surface isolation grooves

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Widely Tunable Distributed Feedback Semiconductor Lasers with Constant Power and Narrow Linewidth

Two-Segment Gain-Coupled Distributed Feedback Laser

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

A 795 Nm Gain Coupled Distributed Feedback Semiconductor Laser Based on Tilted Waveguides

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Experimental demonstration of a widely tunable two-section DFB laser

Narrow-Strip 670 Nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

1045 nm purely gain coupled semiconductor laser based on periodic electric injection

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

Wavelength Tunable Laser Based on Distributed Reflectors with Deep Submicron Slots

Tunable V-Cavity Semiconductor Laser And Modules

High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Single-Electrode Controlled Four-Section Coupled-Cavity Tunable Laser

Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

Wide-Spectrum Tuning and Narrowing of 780 nm Broad-Area Diode Laser with Littrow-Type Transmission Gratings

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm