Abstract:Optoelectronic synapses based on 3D graphene/MoS2 heterostructure field‐effect transistors are developed. The device demonstrates remarkable light response with photoresponsivity up to 105 A W−1 at 590 nm. Furthermore, multiple synaptic neuromorphic functions are successfully emulated in ultraviolet, visible, near‐infrared, and different polarized light. A new concept is provided here for designing high‐performance optoelectronic synapses with polarization sensitivity. Optoelectronic synapses with information sensing, processing, and memory function are promoting the development of artificial visual perception systems. However, optoelectronic synapses' relatively inferior optoelectronic performance impedes their application in complex neuromorphic computing. Herein, optoelectronic synapses based on 3D graphene/molybdenum disulfide (MoS2) heterostructure field‐effect transistors are developed by using the double stress layer self‐rolled‐up method. The graphene, with excellent electrical properties, enhances the carrier transport capacity of the device. The unique continuous photoconductivity of MoS2 is suitable for simulating various synaptic nerve morphological functions. Meanwhile, the 3D resonant microcavity is added to enhance the optical field and make the device polarization sensitive, which reveals more intangible features of objects. The device demonstrates room‐temperature photodetection at ultraviolet, visible, near‐infrared, and mid‐infrared regions, with photoresponsivity up to 105 A W−1 at 590 nm. Furthermore, multiple synaptic neuromorphic functions, such as inhibitory postsynaptic current, paired‐pulse facilitation, short‐term depression, and long‐term depression, are successfully emulated. Here a new concept is provided for designing high‐performance optoelectronic synapses with polarization sensitivity and excellent potential in artificial intelligence is shown.

Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices

Internal And External Polarization Memory Loss In Single Semiconductor Quantum Dots

Internal and external polarization memory loss in single quantum dots

High-Fidelity Quantum Memory Utilizing Inhomogeneous Nuclear Polarization in A Quantum Dot

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Polarization‐Sensitive Optoelectronic Synapse Based on 3D Graphene/MoS2 Heterostructure

Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon Nanomembrane and P3HT

Spectrum‐dependent Photonic Synapses Based on 2D Imine Polymers for Power‐efficient Neuromorphic Computing

Tailoring Neuroplasticity in Flexible Perovskite QDs-based Optoelectronic Synaptic Transistors by Dual Modes Modulation

Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric Heterojunctions

Barrier Polarity Reversal Based on Interfacial Modification of Au Nanoparticles for Nonvolatile Multilevel Memory and Optoelectronic Synapses

Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric p-n Heterojunctions

All-inorganic perovskite quantum dot light-emitting memories

CsPbBr3 Perovskite Quantum Dots Embedded in Polystyrene-poly2-vinyl Pyridine Copolymer for Robust and Light-Tunable Memristors

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure

Ultrafast Responsive and Low‐Energy‐Consumption Poly(3‐hexylthiophene)/Perovskite Quantum Dots Composite Film‐Based Photonic Synapse

Floating-gate Photosensitive Synaptic Transistors with Tunable Functions for Neuromorphic Computing

Optically Stimulated Synaptic Transistor Based on MoS2/quantum Dots Mixed-Dimensional Heterostructure with Gate-Tunable Plasticity