[Circadian variations of blood sugar and blood insulin in acute myocardial infarct as a function of caloric intake].

C. Pasotti,M. Tenconi,M. Arpesella,A. Capra,M. Rossi,P. Sala

1978-07-01

Abstract:

What problem does this paper attempt to address?

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Chundong Wang,Koen Schouteden,Qi-Hui Wu,Zhe Li,Jianjun Jiang,Chris Van Haesendonck

DOI: https://doi.org/10.1088/0957-4484/27/36/365702

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.
Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering

Ondrej Dyck,Mina Yoon,Lizhi Zhang,Andrew R. Lupini,Jacob L. Swett,Stephen Jesse

DOI: https://doi.org/10.1021/acsanm.0c02118

2023-07-12

Abstract:Chromium atoms in graphene have been proposed to exhibit magnetic moments and spin-selective conducting states depending on the local bonding geometry within the graphene structure, which could lead to interesting applications in spintronics. Despite this interest, there are few direct experimental reports of Cr dopants in graphene even though it is theorized to be stable. Here, we demonstrate the introduction of single Cr dopant atoms into the graphene lattice and onto graphene edges through the controlled use of a focused electron beam in a scanning transmission electron microscope. We show local control of doping locations and when coupled with targeted in situ milling during scanning of the e-beam, these strategies demonstrate an important component of the fabrication of tailored nanostructured devices in the electron microscope. The approach is validated with first principles calculations to understand synthesis pathways during fabrication and reveal the energetics and local properties of Cr atoms embedded in graphene; e.g., Cr doping can convert graphene into a magnetic and semiconducting material, which suggests Cr-doped graphene can be used as a building block for potential electronic devices and a means to construct them.

Materials Science
Direct synthesis of large-area Al-doped graphene by chemical vapor deposition: Advancing the substitutionally doped graphene family

Sami Ullah,Yu Liu,Maria Hasan,Wenwen Zeng,Qitao Shi,Xiaoqin Yang,Lei Fu,Huy Q. Ta,Xueyu Lian,Jingyu Sun,Ruizhi Yang,Lijun Liu,Mark H. Rümmeli

DOI: https://doi.org/10.1007/s12274-021-3655-x

IF: 9.9

2021-07-26

Nano Research

Abstract:Graphene doping continues to gather momentum because it enables graphene properties to be tuned, thereby affording new properties to, improve the performance of, and expand the application potential of graphene. Graphene can be chemically doped using various methods such as surface functionalization, hybrid composites (e.g., nanoparticle decoration), and substitution doping, wherein C atoms are replaced by foreign ones in the graphene lattice. Theoretical works have predicted that graphene could be substitutionally doped by aluminum (Al) atoms, which could hold promise for exciting applications, including hydrogen storage and evolution, and supercapacitors. Other theoretical predictions suggest that Al substitutionally doped graphene (AlG) could serve as a material for gas sensors and the catalytic decomposition of undesirable materials. However, fabricating Al substitutionally doped graphene has proven challenging until now. Herein, we demonstrate how controlled-flow chemical vapor deposition (CVD) implementing a simple solid precursor can yield high-quality and large-area monolayer AlG, and this synthesis is unequivocally confirmed using various characterization methods including local electron energy-loss spectroscopy (EELS). Detailed high-resolution transmission electron microscopy (HRTEM) shows numerous bonding configurations between the Al atoms and the graphene lattice, some of which are not theoretically predicted. Furthermore, the produced AlG shows a CO2 capturability superior to those of other substitutionally doped graphenes.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties

Ondrej Dyck,Lizhi Zhang,Mina Yoon,Jacob L. Swett,Dale Hensley,Cheng Zhang,Philip D. Rack,Jason D. Fowlkes,Andrew R. Lupini,Stephen Jesse

DOI: https://doi.org/10.1016/j.carbon.2020.11.015

2023-07-12

Abstract:Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing graphene offers a simplified platform for the development of atomic-scale fabrication and the focused electron beam in a scanning transmission electron microscope can be used to locally induce defects and sculpt the graphene. In this scenario, the graphene forms the stabilizing scaffold and the experimental question is whether a range of dopant atoms can be attached and incorporated into the lattice using a single technique and, from a theoretical perspective, we would like to know which dopants will create technologically interesting properties. Here, we demonstrate that the electron beam can be used to selectively and precisely insert a variety of transition metal atoms into graphene with highly localized control over the doping locations. We use first-principles density functional theory calculations with direct observation of the created structures to reveal the energetics of incorporating metal atoms into graphene and their magnetic, electronic, and quantum topological properties.

Materials Science
Doping Monolayer Graphene with Single Atom Substitutions

Hongtao Wang,Qingxiao Wang,Yingchun Cheng,Kun Li,Yingbang Yao,Qiang Zhang,Cezhou Dong,Peng Wang,Udo Schwingenschloegl,Wei Yang,X. X. Zhang

DOI: https://doi.org/10.1021/nl2031629

IF: 10.8

2012-01-01

Nano Letters

Abstract:Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.
Competing dynamics of single phosphorus dopant in graphene with electron irradiation

Cong Su,Mukesh Tripathi,Qing-Bo Yan,Zegao Wang,Zihan Zhang,Leonardo Basile,Gang Su,Mingdong Dong,Jani Kotakoski,Jing Kong,Juan-Carlos Idrobo,Toma Susi,Ju Li

DOI: https://doi.org/10.1126/sciadv.aav2252

2018-03-04

Abstract:Atomic-level structural changes in materials are important but challenging to study. Here, we demonstrate the dynamics and the possibility of manipulating a phosphorus dopant atom in graphene using scanning transmission electron microscopy (STEM). The mechanisms of various processes are explored and compared with those of other dopant species by first-principles calculations. This work paves the way for designing a more precise and optimized protocol for atomic engineering.

Materials Science,Atomic Physics
Synthesis and characterization of aluminum-doped graphitic carbon

Isabelle P. Gordon,Grace Suenram,Devin McGlamery,Nicholas P. Stadie

DOI: https://doi.org/10.1557/s43579-024-00531-w

2024-02-21

MRS Communications

Abstract:Heteroatom doping of graphitic carbon is of high interest for tuning its physicochemical properties. Aluminum is commonly reported as a high-interest dopant, but few synthetic strategies have been reported owing to the low equilibrium solubility of Al within graphite. Herein we report several strategies to achieve metastable aluminum-substituted turbostratic graphitic carbon materials with aluminum contents up to ~ 0.5 at%, via co-pyrolysis of two molecular precursors between 800 and 1100°C. The resulting materials exhibit turbostratic graphitic structure and a previously unreported aluminum environment detectable by X-ray absorption spectroscopy (XAS), a likely signature of trigonal planar or puckered AlC3-type sites.

materials science, multidisciplinary
Electrical Properties Of Chemically Doped Graphene With Aluminum Ions

Prashant Jain,Cheng Zhang,Jiang'Ao Huang,Kama Ahmad,Dan Xie,Zewen Liu

DOI: https://doi.org/10.1109/nano.2016.7751527

2016-01-01

Abstract:In this article, we report a Field Effect Transistor (FET) with Aluminum doped graphene channel. The graphene is doped by spin coating a chemical dopant solution which tailored the electrical properties of graphene, such as transfer characteristics and output characteristics. The Doping of graphene was successfully verified by X-Ray photoelectron spectra (XPS) measurements. The testing results showed that the Dirac point (the value of gate to source voltage at which minimum value of drain to source current is attained) in transfer characteristics of Graphene Field Effect Transistor (GFET) shifted from V-GS = 6.42 V to V-GS = 40 V after doping. The slope of the output characteristics of GFET for V-GS = 0 V increased from 3.56 to 5.44.
Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene

Ondrej Dyck,Cheng Zhang,Philip D. Rack,Jason D. Fowlkes,Bobby Sumpter,Andrew R. Lupini,Sergei V. Kalinin,Stephen Jesse

DOI: https://doi.org/10.1016/j.carbon.2020.01.042

2022-03-17

Abstract:Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In situ dopant insertion into a graphene lattice has thus far been demonstrated only for Si, which is ubiquitously present as a contaminant in this material. Here, we achieve in situ manipulation of Pt atoms and their insertion into the graphene host matrix using the e-beam deposited Pt on graphene as a host system. We further demonstrate a mechanism for stabilization of the Pt atom, enabled through the formation of Si-stabilized Pt heteroatomic clusters attached to the graphene surface. This study provides evidence toward the universality of the e-beam assembly approach, opening a pathway for exploring cluster chemistry through direct assembly.

Materials Science
Electronically Nonadiabatic Structural Transformations Promoted by Electron Beams

David B. Lingerfelt,Panchapakesan Ganesh,Jacek Jakowski,Bobby G. Sumpter

DOI: https://doi.org/10.1002/adfm.201901901

IF: 19

2019-06-07

Advanced Functional Materials

Abstract:<p>The use of scanning transmission electron microscopes to manipulate substitutional defects in graphene has recently been demonstrated and modeled using ground state molecular dynamics, but the role of electronic excitations induced through inelastic electron scattering in promoting these transformations has so‐far remained unexplored. Here, probed are the effects of electronic excitation on the structural dynamics of graphene quantum dots of differing edge morphologies that are substitutionally doped with silicon or phosphorous. The ground and excited state potential energy barriers for pyramidal inversion of these nonplanar doped species are evaluated using time‐dependent density functional theory. Optically bright excited states in which the barrier is decreased are identified in the low energy region of the electronic spectrum, suggesting that photoexcitation can modulate the reactivity of defects in graphene under electron beam irradiation. Coupling matrix elements between these inversion‐favoring excited states and the ground state and time‐domain simulations of the material's response to a point charge impulse indicate that focusing an electron beam near the defect can also lead to population of these states, suggesting that beam electrons incident on a defect can both excite the material to an inversion‐favoring state and transfer momentum to the defect to initiate the inversion.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Aluminium storage using nitrogen-doped graphene nanoribbons from first principles

Jovana Vlahović,Ana S. Dobrota,Natalia V. Skorodumova,Igor A. Pašti

DOI: https://doi.org/10.48550/arXiv.2106.11636

2021-06-22

Abstract:Pristine graphene interacts relatively weakly with Al, which is a specie of importance for novel generations of metal-ion batteries. We employ DFT calculations to explore the possibility of enhancing Al interaction with graphene. We investigate non-doped and N-doped graphene nanoribbons, address the impact of the edge sites, which are always present to some extent in real samples, and N-containing defects on the material's reactivity towards Al. The results are compared to that of pristine graphene. We show that introduction of edges does not affect the energetics of Al adsorption significantly by itself. On the other hand, N-doping of graphene nanoribbons is found to affect the adsorption energy of Al to the extent that strongly depends on the type of N-containing defect. While graphitic and pyrrolic N induce minimal changes, the introduction of edge NO group and doping with in plane pyridinic N result in Al adsorption nearly twice as strong as on pristine graphene. The obtained results could guide the further design of advanced materials for Al-ion rechargeable batteries.

Materials Science,Applied Physics,Chemical Physics
Electronic structure of N-doped graphene with native point defects

Zhufeng Hou,Xianlong Wang,Takashi Ikeda,Kiyoyuki Terakura,Masaharu Oshima,Masa-aki Kakimoto

DOI: https://doi.org/10.1103/physrevb.87.165401

IF: 3.7

2013-04-01

Physical Review B

Abstract:Nitrogen doping in graphene has important implications in graphene-based devices and catalysts. We have performed the density functional theory calculations to study the electronic structures of N-doped graphene with vacancies and Stone-Wales defect. Our results show that monovacancies in graphene act as hole dopants and that two substitutional N dopants are needed to compensate for the hole introduced by a monovacancy. On the other hand, divacancy does not produce any free carriers. Interestingly, a single N dopant at divacancy acts as an acceptor rather than a donor. The interference between native point defect and N dopant strongly modifies the role of N doping regarding the free carrier production in the bulk π bands. For some of the defects and N dopant-defect complexes, localized defect π states are partially occupied. Discussion on the possibility of spin polarization in such cases is given. We also present qualitative arguments on the electronic structures based on the local bond picture. We have analyzed the 1s-related x-ray photoemission and adsorption spectroscopy spectra of N dopants at vacancies and Stone-Wales defect in connection with the experimental ones. We also discuss characteristic scanning tunneling microscope (STM) images originating from the electronic and structural modifications by the N dopant-defect complexes. STM imaging for small negative bias voltage will provide important information about possible active sites for oxygen reduction reaction.

physics, condensed matter, applied,materials science, multidisciplinary
Alkali doping of graphene: the crucial role of high temperature annealing

Ali Khademi,Ebrahim Sajadi,Pinder Dosanjh,Doug Bonn,Joshua A. Folk,Alexander Stöhr,Stiven Forti,Ulrich Starke

DOI: https://doi.org/10.1103/PhysRevB.94.201405

2016-10-03

Abstract:The doping efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high doping regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of doping that could be achieved: doping saturated at $\Delta n = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated doping rose one order of magnitude to $\Delta n = 2\times 10^{14}$ e$^-$/cm$^2$.

Mesoscale and Nanoscale Physics
(Invited) High-Density, Flip-Chip Alkali Doping of Graphene and Observation of the Lifshitz Transition

Thomas Szkopek,Ayse Melis Aygar,Oliver Durnan,Sam Bovey,Alexander Grueneis

DOI: https://doi.org/10.1149/ma2024-01121023mtgabs

2024-08-09

ECS Meeting Abstracts

Abstract:The physical properties of 2D materials can be tuned by doping to extreme charge carrier density, enabling the investigation of phenomena such as superconductivity, charge density waves, band inversion and Lifshitz transitions. For example, it is variably estimated that an electron density of 3.7 − 5.1 × 10 14 cm −2 is required in order to induce a Lifshitz transition in monolayer graphene [1,2]. At this charge density, the Fermi surface passes through the hyperbolic saddle point of graphene at the M-pointin the Brillouin zone, where the Fermi surface geometry changes and the density of states diverges at a van Hove singularity. Achieving charge density sufficient to reach the Lifshitz transition has been limited to chemical doping in ultra-high vacuum (UHV) conditions and observation by angle resolved photoemission spectroscopy (ARPES). Integrating experimental methods for charge transport measurements with UHV chemical doping conditions is typically difficult. Field-effect methods including dielectric gating and ionic liquid gating are readily integrated with charge transport measurements, but achieve lower charge carrier density than UHV chemical doping methods. We report here an integrated flip-chip method to dope graphene by alkali vapour in the diffusive regime, suitable for charge transport measurements at ultra-high charge carrier density. We introduce a liquid cesium droplet source into a sealed cavity filled with inert gas (argon) to dope a monolayer graphene Hall bar on a quartz substrate by the process of cesium atom diffusion, adsorption and ionization at the graphene surface (Fig. a). Doping can be monitored by operando ac Hall measurement of longitudinal R xx and transverse R xy resistance of graphene (Fig. b). An optical image of a representative graphene Hall bar is shown in Fig. c (scale bar = 100 μm). The measured time dependent R xx and R xy during Cs exposure can be used to determine the time dependent electron density n and electron mobility μ . Upon sealing, the flip-chip assembly containing doped graphene is stable in ambient conditions, enabling sample characterization by various means, including non-resonant Raman scattering measurement through the transparent quartz window. Charge transport versus temperature and magnetic field in a variable temperature insert was performed, including Hall measurements to B = 7 T (Fig. d). By these methods, we confirm that flip-chip doping with Cs can be used to achieve charge density exceeding 4 × 10 14 cm −2 . The Lifshitz transition is observed via the inversion of cyclotron effective mass, corresponding to sign inversion of the Hall coefficient R H (Fig. d). Employing a third-nearest-neighbour tight binding (3NNTB) calculation, we estimate the Fermi energies and Fermi surfaces corresponding to the charge densities observed by high field magnetotransport (Fig. e). At the Lifshitz transition, the Fermi surface transforms abruptly from that of electron pockets around the K and K' points, to a hole pocket around Γ. Further experimental observations will be discussed. In summary, our findings show that chemical doping, hitherto restricted to ultra-high vacuum conditions, can be applied in a diffusive regime at ambient pressure in an inert gas environment. We anticipate that our flip-chip doping method can be applied to a variety of 2D materials and dopant speciies beyond monolayer graphene and Cs. [1] P. Rosenzweig et al., "Overdoping graphene beyond the van Hove singularity", Physical Review Letters 125, 176403 (2020). [2] A. Zaarour et al., "Flat band and Lifshitz transition in long-range-ordered supergraphene obtained by Erbium intercalation. Physical Review Research 5, 013099 (2023). Figure 1
Boron-doped graphene -- DFT study of the role of dopant concentration and oxidation on sodium and aluminium storage applications

Milica S. Ritopečki,Natalia V. Skorodumova,Ana S. Dobrota,Igor A. Pašti

2023-07-06

Abstract:Graphene is thought to be a promising materials for many applications. However, pristine graphene is not suitable for most electrochemical devices, where defect engineering is crucial for its performance. We demonstrate how boron doping of graphene can alter its reactivity, electrical conductivity and potential application for sodium and aluminium storage, with the emphasis on novel metal-ion batteries. Using DFT calculations, we investigate both the influence of boron concentration and the oxidation of the material, on the mentioned properties. It is demonstrated that the presence of boron in graphene increases its reactivity towards atomic hydrogen and oxygen-containing species, in other words, it makes B-doped graphene more prone to oxidation. Additionally, the presence of these surface functional groups significantly alters the type and strength of the interaction of Na and Al with the given materials. Boron-doping and oxidation of graphene is found to increase Na storage capacity of graphene by the factor of up to 4.

Materials Science,Chemical Physics,Computational Physics
Single-atom doped graphene for hydrogen evolution reactions

Jin-Ho Choi,Hui min Hu

DOI: https://doi.org/10.1088/2053-1583/acddf7

IF: 6.861

2023-06-14

2D Materials

Abstract:Atomic doping is a widely used technique to modify the electronic properties of two-dimensional materials for various applications. In this study, we investigate the catalytic properties of single-atom doped graphene as electrocatalysts for hydrogen evolution reactions (HER) using first-principles calculations. We consider several elements, including Al, Ga, In, Si, Ge, Sn, P, As, and Sb, which were interstitially doped into single and double C vacancies in graphene. Our density functional theory calculations show that all the considered doped graphene, except for As-doped graphene, can be highly active for HER, with hydrogen adsorption free energies (∆G H* ) close to the optimal value (∆G H* = 0), ranging from –0.19 to 0.11 eV. Specifically, ∆G H* of Al, Ga, In, and Ge are much closer to zero when doped in the single vacancy than in the double vacancy. In contrast, ∆G H* of Sb and Sn are much closer to zero in the double vacancy. Si and P have ∆G H* values close to the optimum in both vacancies. Interestingly, the vacancy numbers play a crucial role in forming orbital hybridizations, resulting in distinct electronic distributions for most dopants. As a result, a few doped graphenes show distinctive ferrimagnetic and ferromagnetic orders, which is also an important factor for determining the strength of H adsorption. These findings have important implications for designing graphene-based HER catalysis.

materials science, multidisciplinary
Electronic Structures of N-doped Graphene with Native Point Defects

Zhufeng Hou,Xianlong Wang,Takashi Ikeda,Kiyoyuki Terakura,Masaharu Oshima,Masa-aki Kakimoto

DOI: https://doi.org/10.48550/arXiv.1205.6575

2012-05-30

Materials Science

Abstract:Nitrogen doping in graphene has important implications in graphene-based devices and catalysts. We have performed the density functional theory calculations to study the electronic structures of N-doped graphene with vacancies and Stone-Wales defect. Our results show that monovacancies in graphene act as hole dopants and that two substitutional N dopants are needed to compensate for the hole introduced by a monovacancy. On the other hand, divacancy does not produce any free carriers. Interestingly, a single N dopant at divacancy acts as an acceptor rather than a donor. The interference between native point defect and N dopant strongly modifies the role of N doping regarding the free carrier production in the bulk pi bands. For some of the defects and N dopant-defect complexes, localized defect pi states are partially occupied. Discussion on the possibility of spin polarization in such cases is given. We also present qualitative arguments on the electronic structures based on the local bond picture. We have analyzed the 1s-related x-ray photoemission and adsorption spectroscopy spectra of N dopants at vacancies and Stone-Wales defect in connection with the experimental ones. We also discuss characteristic scanning tunneling microscope (STM) images originating from the electronic and structural modifications by the N dopant-defect complexes. STM imaging for small negative bias voltage will provide important information about possible active sites for oxygen reduction reaction.
Site-selective Substitutional Doping with Atomic Precision on Stepped Al (111) Surface by Single-Atom Manipulation

Chang Chen,Jinhu Zhang,Guofeng Dong,Hezhu Shao,Bo-yuan Ning,Li Zhao,Xi-jing Ning,Jun Zhuang

DOI: https://doi.org/10.1186/1556-276x-9-235

2014-01-01

Nanoscale Research Letters

Abstract:In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method.
Atomistic-Scale Simulations of Defect Formation in Graphene under Noble Gas Ion Irradiation

Kichul Yoon,Ali Rahnamoun,Jacob L Swett,Vighter Iberi,David A Cullen,Ivan V Vlassiouk,Alex Belianinov,Stephen Jesse,Xiahan Sang,Olga S Ovchinnikova,Adam J Rondinone,Raymond R Unocic,Adri C T van Duin

DOI: https://doi.org/10.1021/acsnano.6b03036

IF: 17.1

2016-09-27

ACS Nano

Abstract:Despite the frequent use of noble gas ion irradiation of graphene, the atomistic-scale details, including the effects of dose, energy, and ion bombardment species on defect formation, and the associated dynamic processes involved in the irradiations and subsequent relaxation have not yet been thoroughly studied. Here, we simulated the irradiation of graphene with noble gas ions and the subsequent effects of annealing. Lattice defects, including nanopores, were generated after the annealing of the irradiated graphene, which was the result of structural relaxation that allowed the vacancy-type defects to coalesce into a larger defect. Larger nanopores were generated by irradiation with a series of heavier noble gas ions, due to a larger collision cross section that led to more detrimental effects in the graphene, and by a higher ion dose that increased the chance of displacing the carbon atoms from graphene. Overall trends in the evolution of defects with respect to a dose, as well as the defect characteristics, were in good agreement with experimental results. Additionally, the statistics in the defect types generated by different irradiating ions suggested that the most frequently observed defect types were Stone-Thrower-Wales (STW) defects for He(+) irradiation and monovacancy (MV) defects for all other ion irradiations.
Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Xuefei Liu,Zhaofu Zhang,Zijiang Luo,Bing Lv,Zhao Ding

DOI: https://doi.org/10.3390/nano9121674

2019-11-23

Abstract:The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.

[Circadian variations of blood sugar and blood insulin in acute myocardial infarct as a function of caloric intake].

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering

Direct synthesis of large-area Al-doped graphene by chemical vapor deposition: Advancing the substitutionally doped graphene family

Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties

Doping Monolayer Graphene with Single Atom Substitutions

Competing dynamics of single phosphorus dopant in graphene with electron irradiation

Synthesis and characterization of aluminum-doped graphitic carbon

Electrical Properties Of Chemically Doped Graphene With Aluminum Ions

Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene

Electronically Nonadiabatic Structural Transformations Promoted by Electron Beams

Aluminium storage using nitrogen-doped graphene nanoribbons from first principles

Electronic structure of N-doped graphene with native point defects

Alkali doping of graphene: the crucial role of high temperature annealing

(Invited) High-Density, Flip-Chip Alkali Doping of Graphene and Observation of the Lifshitz Transition

Boron-doped graphene -- DFT study of the role of dopant concentration and oxidation on sodium and aluminium storage applications

Single-atom doped graphene for hydrogen evolution reactions

Electronic Structures of N-doped Graphene with Native Point Defects

Site-selective Substitutional Doping with Atomic Precision on Stepped Al (111) Surface by Single-Atom Manipulation

Atomistic-Scale Simulations of Defect Formation in Graphene under Noble Gas Ion Irradiation

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering