Band structure of graphene modulated by Ti or N dopants and applications in gas sensoring.

Hongping Zhang,X. Luo,X. Lin,Yaping Zhang,Pingping Tang,Xiong Lu,Youhong Tang

DOI: https://doi.org/10.1016/j.jmgm.2015.08.004

IF: 2.942

2015-09-01

Journal of Molecular Graphics and Modelling

Abstract:

What problem does this paper attempt to address?

Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD

Aymeric Panglosse,Philippe Martin-Gonthier,Olivier Marcelot,Cédric Virmontois,Olivier Saint-Pé,Pierre Magnan

DOI: https://doi.org/10.3390/s21175860

2021-08-31

Abstract:Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology are potential candidates for future "Light Detection and Ranging" (Lidar) space systems. Among the SPAD performance parameters, the Photon Detection Probability (PDP) is one of the principal parameters. Indeed, this parameter is used to evaluate the SPAD sensitivity, which directly affects the laser power or the telescope diameter of space-borne Lidars. In this work, we developed a model and a simulation method to predict accurately the PDP of CMOS SPAD, based on a combination of measurements to acquire the CMOS process doping profile, Technology Computer-Aided Design (TCAD) simulations, and a Matlab routine. We compare our simulation results with a SPAD designed and processed in CMOS 180 nm technology. Our results show good agreement between PDP predictions and measurements, with a mean error around 18.5%, for wavelength between 450 and 950 nm and for a typical range of excess voltages between 15 and 30% of the breakdown voltage. Due to our SPAD architecture, the high field region is not entirely insulated from the substrate, a comparison between simulations performed with and without the substrate contribution indicates that PDP can be simulated without this latter with a moderate loss of precision, around 4.5 percentage points.
A Comprehensive and Accurate Analytical SPAD Model for Circuit Simulation

Zeng Cheng,Xiaoqing Zheng,Darek Palubiak,M. Jamal Deen,Hao Peng

DOI: https://doi.org/10.1109/ted.2016.2537879

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:The single-photon avalanche diode (SPAD) is an attractive photosensor due to its high sensitivity and low dead time. In this paper, a comprehensive, accurate analytical SPAD circuit simulation model is proposed and implemented in Verilog-A hardware description language. It shows great application universality and is fully compatible with mainstream commercial circuit simulators. This model incorporates all important operating features of the SPAD. Most importantly, to the best of our knowledge, it is the first time that the band-to-band tunneling mechanism and the temporal dependence of after-pulsing probability are included in an SPAD circuit simulation model. The parameter extraction processes from interavalanche time measurement of a free-running SPAD device are discussed. The simulation results indicate that the proposed model works well. In addition, the primary dark counts from the model are validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5 V. The accuracy of this paper can be greatly improved by using more accurate physical parameters available from the SPAD fabrication vendor.
Accurate Prediction of Photon Detection Probability Based on the 2-D Dead-Space Model for SPADs

Yang Liu,Yihan Zhao,Jin Hu,Rui Ma,Dong Li,Xiayu Wang,Maliang Liu,Zhangming Zhu

DOI: https://doi.org/10.1109/jsen.2022.3226237

IF: 4.3

2023-01-18

IEEE Sensors Journal

Abstract:In this article, we propose an accurate procedure for predicting the photon detection probability (PDP) for single-photon avalanche diodes (SPADs). The energy threshold needed for triggering impact ionization, that is, the dead space, was carefully considered and developed into a 2-D solution. The input parameters are based on the manufacturing process and device layout. The breakdown probability of each point on the 2-D profile was calculated without adding fitting parameters, which can overcome the inaccurate prediction caused by the uneven distribution of the electric field and photon generation for the device with the guard ring. Two sets of SPADs based on 180 nm for front-side illumination and 55 nm for back-side illumination were fabricated and tested. The simulation and experimental results are in accordance with each other. This procedure makes it very easy to optimize the device structure based on the simulation results. In addition, the invention can invoke graphics processing units (GPUs) in the MATLAB platform to perform parallel acceleration calculations and improve the calculation efficiency.

engineering, electrical & electronic,instruments & instrumentation,physics, applied
A Computational Model of a Single-Photon Avalanche Diode Sensor for Transient Imaging

Quercus Hernandez,Diego Gutierrez,Adrian Jarabo

DOI: https://doi.org/10.48550/arXiv.1703.02635

2017-02-23

Abstract:Single-Photon Avalanche Diodes (SPAD) are affordable photodetectors, capable to collect extremely fast low-energy events, due to their single-photon sensibility. This makes them very suitable for time-of-flight-based range imaging systems, allowing to reduce costs and power requirements, without sacrifizing much temporal resolution. In this work we describe a computational model to simulate the behaviour of SPAD sensors, aiming to provide a realistic camera model for time-resolved light transport simulation, with applications on prototyping new reconstructions techniques based on SPAD time-of-flight data. Our model accounts for the major effects of the sensor on the incoming signal. We compare our model against real-world measurements, and apply it to a variety of scenarios, including complex multiply-scattered light transport.

Instrumentation and Detectors,Computer Vision and Pattern Recognition,Graphics
Electrical and Optical 3D Modelling of Light-Trapping Single-Photon Avalanche Diode

Tianzhe Zheng,Kai Zang,Matthew Morea,Muyu Xue,Ching-Ying Lu,Xiao Jiang,Qiang Zhang,Theodore I. Kamins,James S. Harris

DOI: https://doi.org/10.1117/12.2287312

2018-01-01

Abstract:Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.
Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Salih Yanikgonul,Victor Leong,Jun Rong Ong,Ching Eng Png,Leonid Krivitsky

DOI: https://doi.org/10.1109/JSTQE.2019.2938439

2019-05-07

Abstract:Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated quantum photonics demonstrations still require the coupling of light to external photodetectors. On-chip silicon single-photon avalanche diodes (SPADs) provide a viable solution as they can be seamlessly integrated with photonic components, and operated with high efficiencies and low dark counts at temperatures achievable with thermoelectric cooling. Moreover, they are useful in applications such as LIDAR and low-light imaging. In this paper, we report the design and simulation of silicon waveguide-based SPADs on a silicon-on-insulator platform for visible wavelengths, focusing on two device families with different doping configurations: p-n+ and p-i-n+. We calculate the photon detection efficiency (PDE) and timing jitter at an input wavelength of 640 nm by simulating the avalanche process using a 2D Monte Carlo method, as well as the dark count rate (DCR) at 243 K and 300 K. For our simulated parameters, the optimal p-i-n+ SPADs show the best device performance, with a saturated PDE of 52.4 +/- 0.6% at a reverse bias voltage of 31.5 V, full-width-half-max (FWHM) timing jitter of 10 ps, and a DCR of < 5 counts per second at 243 K.

Instrumentation and Detectors,Optics,Quantum Physics
Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges

Xuanyu Qian,Wei Jiang,Ahmed Elsharabasy,M. Jamal Deen

DOI: https://doi.org/10.3390/s23073412

IF: 3.9

2023-03-25

Sensors

Abstract:With the growing importance of single-photon-counting (SPC) techniques, researchers are now designing high-performance systems based on single-photon avalanche diodes (SPADs). SPADs with high performances and low cost allow the popularity of SPC-based systems for medical and industrial applications. However, few efforts were put into the design optimization of SPADs due to limited calibrated models of the SPAD itself and its related circuits. This paper provides a perspective on improving SPAD-based system design by reviewing the development of SPAD models. First, important SPAD principles such as photon detection probability (PDP), dark count rate (DCR), afterpulsing probability (AP), and timing jitter (TJ) are discussed. Then a comprehensive discussion of various SPAD models focusing on each of the parameters is provided. Finally, important research challenges regarding the development of more advanced SPAD models are summarized, followed by the outlook for the future development of SPAD models and emerging SPAD modeling methods.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
TH‐CD‐207B‐07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

Z. Cheng,X. Zheng,J. Deen,H. Peng,L. Xing

DOI: https://doi.org/10.1118/1.4958213

IF: 4.506

2016-01-01

Medical Physics

Abstract:Purpose:Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors.Methods:The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p‐well junction, which is isolated from the p‐substrate by a deep n‐well junction. Inter‐avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap.Results:At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after‐pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after‐pulsing probability is 63.5% at ‐ 30 °C and drops to ∼6.6% at 40 °C.Conclusion:A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band‐to‐band tunneling dark noise contribution and temporal dependence of the after‐pulsing probability.
Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors

Abdul Waris Ziarkash,Siddarth Koduru Joshi,Mario Stipčević,Rupert Ursin

DOI: https://doi.org/10.1038/s41598-018-23398-z

IF: 4.6

2018-03-22

Scientific Reports

Abstract:Single-photon avalanche diode (SPAD) detectors, have a great importance in fields like quantum key distribution, laser ranging, florescence microscopy, etc. Afterpulsing is a non-ideal behavior of SPADs that adversely affects any application that measures the number or timing of detection events. Several studies based on a few individual detectors, derived distinct mathematical models from semiconductor physics perspectives. With a consistent testing procedure and statistically large data sets, we show that different individual detectors - even if identical in type, make, brand, etc. - behave according to fundamentally different mathematical models. Thus, every detector must be characterized individually and it is wrong to draw universal conclusions about the physical meaning behind these models. We also report the presence of high-order afterpulses that are not accounted for in any of the standard models.

multidisciplinary sciences
InGaAs/InP Single-Photon Detectors with 60% Detection Efficiency at 1550 Nm

Yu-Qiang Fang,Wei Chen,Tian-Hong Ao,Cong Liu,Li Wang,Xin-Jiang Gao,Jun Zhang,Jian-Wei Pan

DOI: https://doi.org/10.1063/5.0014123

IF: 1.6

2020-01-01

Review of Scientific Instruments

Abstract:InGaAs/InP single-photon detectors (SPDs) are widely used for near-infrared photon counting in practical applications. Photon detection efficiency (PDE) is one of the most important parameters for SPD characterization, and therefore, increasing PDE consistently plays a central role in both industrial development and academic research. Here, we present the implementation of high-frequency gating InGaAs/InP SPDs with a PDE as high as 60% at 1550 nm. On one hand, we optimize the structure design and device fabrication of InGaAs/InP single-photon avalanche diodes with an additional dielectric-metal reflection layer to relatively increase the absorption efficiency of incident photons by ∼20%. On the other hand, we develop a monolithic readout circuit of weak avalanche extraction to minimize the parasitic capacitance for the suppression of the afterpulsing effect. With 1.25 GHz sine wave gating and optimized gate amplitude and operation temperature, the SPD is characterized to reach a PDE of 60% with a dark count rate (DCR) of 340 kcps. For practical use, given 3 kcps DCR as a reference, the PDE reaches ∼40% PDE with an afterpulse probability of 5.5%, which can significantly improve the performance for the near-infrared SPD-based applications.
Room temperature continuous frequency tuning InGaAs/InP single-photon detector

Huan Chen,Musheng Jiang,Shihai Sun,Guangzhao Tang,Linmei Liang

DOI: https://doi.org/10.1063/1.5030141

IF: 1.697

2018-07-01

AIP Advances

Abstract:The available high speed InGaAs/InP-based single-photon avalanche detectors (SPAD) are normally worked at fixed gate or narrow tunable gate frequency. However, a wide tunable gate frequency or even free running single photon detectors at high speed would be very useful in quantum key distribution, quantum entanglement distribution and so on. Here, we present a high speed InGaAs/InP-based single photon avalanche detector (SPAD) with tunable gate frequency from 900MHz to 1000MHz which also can work under the room temperature without any cooling setups. Instead of restricting the spike noise by self-differencing or filtering method, we use an Analog to Digital Converter(ADC) to sample the output voltage of the APD. Through the sampled voltage we can discriminate an avalanche signal from the noise. Based on the sampling method, a room temperature SPAD is implemented with a dark count rate of 2.5 × 10−5 per gate and afterpulse probability of 1.3%, given the condition that detection efficiency of 10.6%, dead time of 1ns, and clock frequency of 1GHz. The wide tunable gate frequency makes the SPAD very suitable for practical use and commercial producing.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Investigation of the Effects of the Multiplication Area Shape on the Operational Parameters of InGaAs/InAlAs SPADs

Anton Losev,Alexandr Filyaev,Vladimir Zavodilenko,Igor Pavlov,Alexander Gorbatsevich

2023-10-06

Abstract:A 2D model of an InGaAs/InAlAs single photon avalanche photodiode has been developed. The influence of the active area structure in the multiplication region on the diode's operating parameters has been studied. It was found that changing the diameter of the structure's active region leads to a change in the dark current in the linear part of the current-voltage curve and a change in the breakdown voltage. Reducing the diameter of the active region from 25 $\mu$m to 10 $\mu$m allowed decreasing the dark current in the linear mode by about $10$ dB. It has been shown that the quality of the SPAD device can be assessed by knowing the avalanche breakdown voltage and the overall current-voltage curve plot if we consider structures with the same multiplication region thickness and different remaining layers. The higher the breakdown voltage, the better the structure's quality due to smaller local increases in the field strength. Following this statement, we conclude that for further use in single-photon detectors, it is reasonable to pick specific SPADs from a batch on the sole basis of their current-voltage curves.

Applied Physics,Quantum Physics
A Simple Numerical Model to Estimate the Temperature Distributions Over Photodetectors in Steady-State

Ergun Simsek,Alexander S. Hastings,David A. Tulchinsky,Keith J. Williams,Curtis R. Menyuk

DOI: https://doi.org/10.1109/jphot.2024.3397857

IF: 2.4

2024-05-17

IEEE Photonics Journal

Abstract:This research introduces an approximation method for computing the temperature distribution in photodetectors operating in a steady state under optical excitation. The derived temperature profile is utilized to assess the impact of temperature variations on crucial performance metrics of photodetectors, encompassing quantum efficiency, bandwidth, and phase noise. Our methodology, grounded in simplified heat transport equations, yields significant insights into the intricate relationship between temperature and photodetector performance. Our findings reveal that assuming constant room temperature operation leads to an overestimate of the output current and quantum efficiency and an underestimate of bandwidth, by contrast, a model in which the temperature varies produces estimates that closely align with experimentally-measured values for quantum efficiency and bandwidth. The low thermal conductivity of InGaAs hampers heat dissipation, resulting in temperature accumulation. Varying the reverse bias voltage while keeping the output current constant by changing the input optical power leads to nonlinear variations in the bandwidth, phase noise, and quantum efficiency. These insights contribute to the understanding and optimization of thermal management in photodetectors under strong optical excitations.

engineering, electrical & electronic,optics,physics, applied
Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron

Kai Qiao,Yu Chang,Zefang Xu,Fei Yin,Liyu Liu,Jieying Wang,Chang Su,Linmeng Xu,Mengyan Fang,Chunliang Liu,Jinshou Tian,Xing Wang

DOI: https://doi.org/10.1109/jqe.2024.3399176

IF: 2.5

2024-06-07

IEEE Journal of Quantum Electronics

Abstract:InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting single-photon in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection and ranging(LIDAR). The effect of multiplication layer width on the performance of SPADs in both linear and Geiger mode have been theoretically studied. Three-types of InGaAs/InP planer SPADs with different multiplication width are fabricated and evaluated. The results of this study suggest that modifying the width of the multiplication layer can regulate the breakdown voltage, punch-through voltage, and dark current of the device. It is found that the measured time jitter is decreasing with the reduction of the width of the multiplication region. These characteristics can be used to optimize the temporal resolution of SPADs device.

engineering, electrical & electronic,optics,physics, applied,quantum science & technology
Characterization of Single Photon Avalanche Diodes Fabricated by 0.13μm CMOS Technology

Jiayu Guo,Chuyu Chen,Liang Feng,XiaoFeng Pu,Xiaoli Ji,Feng Yan

DOI: https://doi.org/10.1117/12.2034784

2013-01-01

Abstract:In this paper, two different SPAD structures are designed and fabricated by 0.13 mu m CMOS technology. For the structure-1, a guard ring with low implanted p-well is used at the edge of p(+) region, which prevents the periphery region breakdown while for the structure-2 a "virtual" guard ring structure with a p(-) well under the whole P+ region is designed. The first structure exhibits a maximum photon detection probability of 15% and a typical dark count rate of 18 kHz at room temperature while the second structure exhibits a maximum of photon detection probability of 28% and a dark count rate of 23 kHz. These results would give a help for further advanced SPAD design.
Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

Jian Ma,Bing Bai,Liu-Jun Wang,Cun-Zhu Tong,Ge Jin,Jun Zhang,Jian-Wei Pan

DOI: https://doi.org/10.1364/ao.55.007497

IF: 1.9

2016-09-12

Applied Optics

Abstract:InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage, and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs.

optics
Thermal radiation effect in near infrared single photon detector

Bin Li,Yuxiu Niu,Yinde Feng

DOI: https://doi.org/10.1007/s11801-023-3036-7

2023-08-22

Optoelectronics Letters

Abstract:Aminiaturized near infrared single photon detector is demonstrated by integrating a thermoelectric cooler (TEC), a thermistor, and a planar type InGaAs/InP separate absorption, charge and multiplication structure single photon avalanche diode into a butterfly case. The performance of the device at different temperatures is tested. It can achieve 20.3% single photon detection efficiency and 1.38 kHz dark count rate when the chip is cooled to 223 K. The test results show that even when the chip temperature is kept constant, the dark count rate of the device still increases with the increase of ambient temperature, which is consistent with the carrier generation mechanism of semiconductor materials. The mechanism is researched and it is found that thermal radiation of the high temperature case is the main source of dark count. The deep research on the mechanism is beneficial to developing higher performance devices in the future.

optics
A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Sheikh Z. Ahmed,Samiran Ganguly,Yuan Yuan,Jiyuan Zheng,Yaohua Tan,Joe C. Campbell,Avik W. Ghosh

DOI: https://doi.org/10.1109/JLT.2021.3068265

2021-02-09

Abstract:III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations.

Instrumentation and Detectors,Materials Science
Compact free-running InGaAs/InP single-photon detector with 40% detection efficiency and 2.3 kcps dark count rate

Qi Xu,Chao Yu,Wei Chen,Jianglin Zhao,Dajian Cui,Jun Zhang,Jian-Wei Pan

DOI: https://doi.org/10.1109/JSTQE.2023.3328870

2023-10-26

Abstract:Free-running InGaAs/InP single-photon detectors (SPDs) based on negative-feedback avalanche diodes (NFADs) are the key components for applications requiring asynchronous single-photon detection in the near-infrared region. From the perspective of practical applications, the features of SPDs in terms of high photon detection efficiency (PDE), low noise, large sensitive area, and compactness are highly desired for system integration and performance enhancement. Here, we present the implementation of a compact four-channel multimode fiber coupling free-running InGaAs/InP SPD, with the best overall performance to date. On the one hand, we design and fabricate structure-optimized InGaAs/InP NFAD devices with 25 $\mu$m diameter active area and integrated thin film resistors to enhance the maximum achievable PDE. On the other hand, we apply a compact thermoacoustic cryocooler to regulate the operating temperature of NFADs within a large range, and design a dedicated readout circuit with minimized parasitic parameters and tunable settings of hold-off time to suppress the afterpulsing effect. The SPD is then characterized to achieve remarkable overall performance simultaneously at 1550 nm, i.e., 40% PDE, 2.3 kcps dark count rate, 8% afterpulse probability and 49 ps timing jitter (full width at half maximum) under the conditions of 5.9 V excess bias voltage, 10 $\mu$s hold-off time and 213 K operation temperature. Such performance and the results of the long-term stability tests indicate that the SPD could be a favorable solution for practical applications.

Instrumentation and Detectors,Optics,Quantum Physics
Dark Current and Single Photon Detection by 1550nm Avalanche Photodiodes: Dead Time Corrected Probability Distributions and Entropy Rates

Nicole Menkart,Joseph D. Hart,Thomas E. Murphy,Rajarshi Roy

DOI: https://doi.org/10.48550/arXiv.2210.01921

2022-10-04

Optics

Abstract:Single photon detectors have dark count rates that depend strongly on the bias level for detector operation. In the case of weak light sources such as novel lasers or single-photon emitters, the rate of counts due to the light source can be comparable to that of the detector dark counts. In such cases, a characterization of the statistical properties of the dark counts is necessary. The dark counts are often assumed to follow a Poisson process that is statistically independent of the incident photon counts. This assumption must be validated for specific types of photodetectors. In this work, we focus on single-photon avalanche photodiodes (SPADs) made for 1550nm. For the InGaAs detectors used, we find the measured distributions often differ significantly from Poisson due to the presence of dead time and afterpulsing with the difference increasing with the bias level. When the dead time is increased to remove the effects of afterpulsing, it is necessary to correct the measured distributions for the effects of the dead time. To this end, we apply an iterative algorithm to remove dead time effects from the probability distribution for dark counts as well as for the case where light from an external weak laser source (known to be Poisson) is detected together with the dark counts. We believe this to be the first instance of the comprehensive application of this algorithm to real data and find that the corrected probability distributions are Poisson distributions in both cases. We additionally use the Grassberger-Procaccia algorithm to estimate the entropy production rates of the dark count processes, which provides a single metric that characterizes the temporal correlations between dark counts as well as the shape of the distribution. We have thus developed a systematic procedure for taking data with 1550nm SPADs and obtaining accurate photocount statistics to examine novel light sources.

Band structure of graphene modulated by Ti or N dopants and applications in gas sensoring.

Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD

A Comprehensive and Accurate Analytical SPAD Model for Circuit Simulation

Accurate Prediction of Photon Detection Probability Based on the 2-D Dead-Space Model for SPADs

A Computational Model of a Single-Photon Avalanche Diode Sensor for Transient Imaging

Electrical and Optical 3D Modelling of Light-Trapping Single-Photon Avalanche Diode

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges

TH‐CD‐207B‐07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors

InGaAs/InP Single-Photon Detectors with 60% Detection Efficiency at 1550 Nm

Room temperature continuous frequency tuning InGaAs/InP single-photon detector

Investigation of the Effects of the Multiplication Area Shape on the Operational Parameters of InGaAs/InAlAs SPADs

A Simple Numerical Model to Estimate the Temperature Distributions Over Photodetectors in Steady-State

Analysis of InGaAs/InP Single Photon Avalanche Diodes With Multiplication Width in Sub-Micron

Characterization of Single Photon Avalanche Diodes Fabricated by 0.13μm CMOS Technology

Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

Thermal radiation effect in near infrared single photon detector

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

Compact free-running InGaAs/InP single-photon detector with 40% detection efficiency and 2.3 kcps dark count rate

Dark Current and Single Photon Detection by 1550nm Avalanche Photodiodes: Dead Time Corrected Probability Distributions and Entropy Rates