High-Quality Graphene Using Boudouard Reaction

Artem K Grebenko,Dmitry V Krasnikov,Anton V Bubis,Vasily S Stolyarov,Denis V Vyalikh,Anna A Makarova,Alexander Fedorov,Aisuluu Aitkulova,Alena A Alekseeva,Evgeniia Gilshtein,Zakhar Bedran,Alexander N Shmakov,Liudmila Alyabyeva,Rais N Mozhchil,Andrey M Ionov,Boris P Gorshunov,Kari Laasonen,Vitaly Podzorov,Albert G Nasibulin
DOI: https://doi.org/10.1002/advs.202200217
Abstract:Following the game-changing high-pressure CO (HiPco) process that established the first facile route toward large-scale production of single-walled carbon nanotubes, CO synthesis of cm-sized graphene crystals of ultra-high purity grown during tens of minutes is proposed. The Boudouard reaction serves for the first time to produce individual monolayer structures on the surface of a metal catalyst, thereby providing a chemical vapor deposition technique free from molecular and atomic hydrogen as well as vacuum conditions. This approach facilitates inhibition of the graphene nucleation from the CO/CO2 mixture and maintains a high growth rate of graphene seeds reaching large-scale monocrystals. Unique features of the Boudouard reaction coupled with CO-driven catalyst engineering ensure not only suppression of the second layer growth but also provide a simple and reliable technique for surface cleaning. Aside from being a novel carbon source, carbon monoxide ensures peculiar modification of catalyst and in general opens avenues for breakthrough graphene-catalyst composite production.
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