Abstract:The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM) materials which exhibit similar capability of spin-polarizing electrons with ferromagnets, it is a nature question whether the ALM insulators or semiconductors can also act as unique barriers for the spin splitting effect. Here, through first-principles calculations, we investigated the complex band structure of the ALM insulator FeF$_2$ and found that it possesses an anisotropic spin filtering effect: along the [001] direction of FeF$_2$, a current remains spin-neutral but has locally nonvanishing spin polarizations in the momentum space; moreover, along the [110] direction of FeF$_2$, a current will be globally spin-polarized by different attenuation lengths of oppositely spin-polarized electrons. Leveraging this anisotropic spin filtering effect, we designed two types of MTJs with the ALM barrier: ALM electrode/ALM insulator barrier/non-magnetic (NM) electrode and FM electrode/ALM insulator barrier/NM electrode, using RuO$_2$(001)/FeF$_2$/IrO$_2$ and CrO$_2$(110)/FeF$_2$/IrO$_2$ as the corresponding prototypes, respectively. We found that these two proposed MTJs exhibited the tunneling magnetoresistance (TMR) ratios of 216\% and 3956\%, by matching the conduction channels of the electrodes and the spin-resolved lowest decay rate of the barrier in the momentum space. Our work deepens and generalizes understanding toward the spin filtering effect for the rising ALM insulators and semiconductors, and broadens applications of the AFM spintronics.

Spin filtering through ferromagnetic BiMnO3 tunnel barriers

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin-filtering in superconducting junction with the manganite interlayer

The role of magnetic anisotropy in spin filter junctions

Spin Filtering in the Double-Barrier Structure

Spin Filtering in Single Magnetic Barrier Structures Revisited

Spin-dependent tunneling through high-k LaAlO3

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Spin Hall Magnetoresistance in Pt/BiFeO3 Bilayer

Rectification in Spin-Orbit Materials Using Low Energy Barrier Magnets

Spin filtering with insulating altermagnets

Combining half-metals and multiferroics into epitaxial heterostructures for spintronics

Large magnetoresistance using hybrid spin filter devices

Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers

Spin-filtering and Switching Effects of a Single-Molecule Magnet Mn(dmit)2

Current-driven magnetic resistance in van der Waals spin-filter antiferromagnetic tunnel junctions with MnBi$_2$Te$_4$

Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

Spin-Filter Effect in Magnetite Nanowire

Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions