Design Considerations of Electrically Induced Source/Drain Junction SOI MOSFETs for the Reduced Short Channel and Hot Carrier Effects

S. Gupta,S. Baishya
DOI: https://doi.org/10.7763/IJCEE.2011.V3.435
Abstract:Due to scaling of the channel length, SCEs and HCEs are becoming serious issues. To reduce these effects, electrically induced ultra-shallow source/drain junctions has been investigated using actual (Gaussian) source/drain doping profiles. In this paper the novel attributes of nano scale SOI MOSFETs with electrically induced source/drain junctions are presented with extensive simulation study. It has been found that the use of induced source/drain junctions is capable of controlling the short channel effects.
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