Simulation Study of the Variation of Boundary Voltages in Brain EIT Caused by Resistivity Disturbance inside Cranium

Dong Xiu
Abstract:Because of the existence of the high resistivity skull,the variations of the boundary voltages which are caused by the resistivity changes inside the target area are different to that with non skull object during EIT measurement. In order to study these variations,a simulation model which consists of 7300 resistors was established based on the anatomical atlas of the human head.Simulation results based on this model shown that the existence of the skull and CSF caused the dynamic range of boundary voltages increased from 17 to 28 times.As the skull and CSF was considered,the resulted average and the maximal normalized boundary voltage changes decreased by 11.4 and 8.3 times respectively when the spatial resolution is 0.09 and the conductivity resolution is 0.25.Based on those results,we think that the hardware of brain EIT should be able to measure 0.01% of the boundary voltages changes compared with their full scale ranges(FSR) so that it can detect the resistivity disturbance like this.
Engineering,Medicine,Physics
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