Abstract:Creating a heterostructure by combining two magnetically and structurally distinct ruthenium oxides is a crucial approach for investigating their emergent magnetic states and interactions. Previously, research has predominantly concentrated on the intrinsic properties of the ferromagnet SrRuO3 and recently discovered altermagnet RuO2 solely. Here, we engineered an ultrasharp sublattice-matched heterointerface using pseudo-cubic SrRuO3 and rutile RuO2, conducting an in-depth analysis of their spin interactions. Structurally, to accommodate the lattice symmetry mismatch, the inverted RuO2 layer undergoes an in-plane rotation of 18 degrees during epitaxial growth on SrRuO3 layer, resulting in an interesting and rotational interface with perfect crystallinity and negligible chemical intermixing. Performance-wise, the interfacial layer of 6 nm in RuO2 adjacent to SrRuO3 exhibits a nonzero magnetic moment, contributing to an enhanced anomalous Hall effect (AHE) at low temperatures. Furthermore, our observations indicate that, in contrast to SrRuO3 single layers, the AHE of [(RuO2)15/(SrRuO3)n] heterostructures shows nonlinear behavior and reaches its maximum when the SrRuO3 thickness reaches tens of nm. These results suggest that the interfacial magnetic interaction surpasses that of all-perovskite oxides (~5-unit cells). This study underscores the significance and potential applications of magnetic interactions based on the crystallographic asymmetric interfaces in the design of spintronic devices.

Ab initio study of electronic and magnetic properties of Mn2Ru Z/MgO (001) heterojunctions (Z= Al, Ge)

Ab-initio study of electronic and magnetic properties of Mn$_2$RuZ/MgO (001) heterojunctions (Z= Al, Ga, Si, Ge)

Ballistic spin-transport properties of magnetic tunnel junctions with MnCr-based ferrimagnetic quaternary Heusler alloys

Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions

First-principles study of the structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction

Ab initio comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn3Ga and Mn3Al

Ab initio comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn$_3$Ga and Mn$_3$Al

Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices

Study of half metallicity, structural and mechanical properties in inverse Heusler alloy Mn2ZnSi(1- x)Ge x and a superlattice

Antiferromagnetism in Ru2MnZ (Z=Sn, Sb, Ge, Si) full Heusler alloys: effects of magnetic frustration and chemical disorder

First Principles Investigation of Magnetocrystalline Anisotropy at the L2_1 Full Heusler|MgO Interfaces and Tunnel Junctions

Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study

Structural, Electronic, Half-Metallic and Thermoelectric Properties of Quaternary Heusler Alloys AgCoFeZ (Z = Al, Ga, Si, Ge, and Sn), NiFeCrZ(Z = Al, Si, Ge, In) and NdCoMnGa: a First Principles Study

First-principles study of exchange interactions and Curie temperatures of half-metallic ferrimagnetic full Heusler alloys Mn2VZ (Z=Al, Ge)

First-principles study on the magnetic anisotropy of the CoFe/ MgAl2O4 heterostructures

Structural, elastic, electronic, magnetic and thermoelectric properties of new quaternary Heusler compounds CoZrMnX (X=Al, Ga, Ge, In)

Confined Magnetization at the Sublattice-Matched Ruthenium Oxide Heterointerface

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seedlayer

Ab-initio study of electronic and optical properties of Zr 2 NiZ (Z=Al, Ga, In) full Heusler alloys

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2Y Al and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Preparation and structural properties of thin films and multilayers of the Heusler compounds Cu2MnAl, Co2MnSn, Co2MnSi and Co2MnGe