Abstract:In this paper,the matching asymptotic method and multiple variable method are used to obtain the dispersion relation and the quantization condition of the interfacial morphology in directional solidification process when the interfacial dynamics is anisotropic,based on the steady solution of deep cellular crystal growth.The stability of interfacial morphology of deep cell growth during directional solidification under the influence of anisotropic interfacial dynamics was studied.In the second part of the article,the mathematical model of the oriented solidification system is established,and the overall ground state solution of the constant cellular growth is taken as the ground state,and the unsteady state solution of the deep cellular growth is expressed as the superposition of the ground state solution and the perturbation dynamics solution when the stability analysis is carried out.Since the thermodynamic conditions in the mathematical model of the problem constitute a regenerative problem together with the boundary conditions.The asymptotic solution for the growth of the cellular crystal ε→0 when can be sought by dividing the cellular crystal growth region into an external region away from the root and a region near the root,finding the asymptotic solution in the external region and the root region,respectively,and then matching them to obtain a consistent and effective asymptotic solution over the whole region.The third part of the article solves the asymptotic solution of the model in the external region to obtain a first-order approximation of the eigenvalues.The fourth and fifth parts of the article then match the inner solutions with the outer solutions based on the vicinity of the singularity to obtain the global solutions and quantization conditions of the system,and finally perform stability analysis.The results show that the directional solidification system of deep cellular crystal growth considering anisotropic interfacial kinetics contains two global instability mechanisms:global oscillation instability and low-frequency instability.The stability analysis shows that the anisotropic interfacial kinetics has a significant effect on the global oscillatory instability mechanism under low order approximation.With the increase of the anisotropic interfacial kinetics parameters β 4 ,the global oscillatory instability region ( Os.U ) of the dendrite structure with strong oscillation in neutral mode decreases.At the same time,the influence of interfacial dynamic anisotropy parameters on the overall oscillation instability of the system increases with the increase of interfacial dynamic parameters.

Effect of silicon anisotropy on the stability of thermomigration of linear zones

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

The effect of mechanical strains on the ferroelectric and dielectric properties of a model single crystal ? Phase field simulation

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Linear stability analysis on the thermocapillary flow of molten silicon in a liquid bridge between unequal disks under a rotating magnetic field

Effect of rotating magnetic field on instabilities of thermocapillary flow in a Czochralski silicon melt pool

Analysis of Structural Development and Defects during the Anisotropic Growth of Silicon

In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon

Effect of crystal rotation on the instability of thermocapillary–buoyancy convection in a Czochralski model

Thermally induced structural modification in the Al/Zr multilayers

A Study on the Room-Temperature Magnetoplastic Effect of Silicon and Its Mechanism.

Anomalous tension–compression asymmetry in amorphous silicon: insights from atomistic simulations and elastoplastic constitutive modeling

Influence of morphological instability on grain boundary trajectory during directional solidification

Enhanced heat transport in amorphous silicon via microstructure modulation

Convective instabilities in the Czochralski model with different radii ratios

Simulations of multivariant Si I to Si II phase transformation in polycrystalline silicon with finite-strain scale-free phase-field approach

Interface Dislocation Trajectory and Long-Range Strain Associated with the Migration of Semicoherent Interfaces

Deformation effect of melt pool boundaries on the mechanical property anisotropy in the SLM AlSi10Mg

Effects of anisotropic interfacial kinetics on morphology stability of deep cellular crystal growth