Atomic-level polarization reversal in sliding ferroelectric semiconductors
Fengrui Sui,Haoyang Li,Ruijuan Qi,Min Jin,Zhiwei Lv,Menghao Wu,Xuechao Liu,Yufan Zheng,Beituo Liu,Rui Ge,Yu-Ning Wu,Rong Huang,Fangyu Yue,Junhao Chu,Chungang Duan
DOI: https://doi.org/10.1038/s41467-024-48218-z
IF: 16.6
2024-05-07
Nature Communications
Abstract:Abstract Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.
multidisciplinary sciences