Abstract:Utilization of the switchable spontaneous polarization of ferroelectric materials offers a promising avenue for the future of nanoelectronic memories and logic devices provided that nanoscale metal-ferroelectric-metal heterostructures can be engineered to maintain a bi-stable polarization switchable by an applied electric field. The most challenging aspect of this approach is to overcome the deleterious interface effects which tend to render ferroelectric polarization either unstable or unswitchable and which become ever more important as ferroelectric materials are produced thinner and thinner. Here we use first-principles density functional calculations and phenomenological modeling to demonstrate that a BaO/RuO2 interface termination sequence in SrRuO3/BaTiO3/SrRuO3 epitaxial heterostructures grown on SrTiO3 can lead to a nonswitchable polarization state for thin BaTiO3 films due to a fixed interface dipole. The unfavorable interface dipole at the BaO/RuO2 interface leads to a strong preference for one polarization state and, in thin film structures, leads to instability of the second state below a certain critical thickness, thereby making the polarization unswitchable. We analyze the contribution of this interface dipole to the energetic stability of these heterostructures. Furthermore, we propose and demonstrate that this unfavorable interface dipole effect can be alleviated by deposition of a thin layer of SrTiO3 at the BaO/RuO2 terminated interface. Our first-principles and phenomenological modeling predict that the associated change of the interface termination sequence to SrO/TiO2 on both sides of the heterostructure leads to a restoration of bi-stability with a smaller critical thickness, along with an enhancement of the barrier for polarization reversal. These results demonstrate that interface engineering is a viable approach to enhance ferroelectric properties at the nanoscale.

Tunable Multistate Ferroelectricity of Unit-Cell-Thick BaTiO3 Revived by a Ferroelectric SnS Monolayer via Interfacial Sliding

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP<sub>2</sub>Se<sub>6</sub> monolayers

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Single Molecular Semi-Sliding Ferroelectricity/multiferroicity

Atomic-Scale Insight into the Reversibility of Polar Order in Ultrathin Epitaxial Nb:SrTiO 3/batio 3 Heterostructure and Its Implication to Resistive Switching

Enhancement of Ferroelectric Polarization in Layered BaZrO3/BaTiO3 Superlattices

Polarization multistates in composite ferroelectrics

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

Atomic-level polarization reversal in sliding ferroelectric semiconductors

Sliding induced multiple polarization states in two-dimensional ferroelectrics

Polarization multistates in antiferroelectric van der Waals materials

Strain-driven stabilization of a room-temperature chiral multiferroic with coupled ferroaxial and ferroelectric order

Cumulative Polarization Coexisting with Conductivity at Interfacial Ferroelectrics

Cumulative Polarization in Conductive Interfacial Ferroelectrics

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Modulation of Polarization in Sliding Ferroelectrics by Introducing Intrinsic Electric Fields

Interlayer-spin-interaction-driven Sliding Ferroelectricity in a van der Waals Magnetic Heterobilayer

In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si