Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

All-optical switching in long-period fiber grating with highly nonlinear chalcogenide fibers

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

All-fiber Nonvolatile Optical Switch

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

CO2 laser-written long-period fiber grating with a high diffractive order cladding mode near the turning point

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Wavelength-Switchable Fiber Laser Based on Long-Period Fiber Grating Written on Polarization-Maintaining Photonic Crystal Fiber

Cascaded long-period fiber gratings on an all-solid photonic bandgap fiber

High Sensitivity Chiral Long-Period Grating Sensors Written in the Twisted Fiber

Compact Long-Period Fiber Gratings Based on Periodic Microchannels

All-optical signal gating in cascaded long-period fiber gratings

Direct femtosecond laser writing fiber Bragg gratings in double-D cladding chalcogenide glass infrared fibers

In-fiber polarizer based on a long-period fiber grating written on photonic crystal fiber.

Tunable sensitivity in long period fiber gratings during mode transition with low refractive index intermediate layer

Fiber End-Facet Integrated Non-Volatile Optical Switch Based on Ge2Sb2Te5

Nonlinear switching in a concentric ring core chalcogenide glass optical fiber for passively mode-locking a fiber laser

Nonlinear light propagation in chalcogenide photonic crystal slow light waveguides

Compact Long-Period Fiber Gratings With Resonance at Second-Order Diffraction

Programmable Long-Period Grating in a Liquid Core Optical Fiber.

Femtosecond Laser Inscribed Small-Period Long-Period Fiber Gratings With Dual-Parameter Sensing