Abstract:Despite recent advances of layered square-net topological material models that possess ideal semimetallic electronic structures and promising potential in material applications, the identification of experimentally accessible two-dimensional square-net materials with related topological properties has proven challenging. Due to the highly tunable physical and topological properties of III-V semiconductors, we revisit the class of III-V materials and observe that the litharge-phase InBi is a layered square-net material and can be exfoliated into the InBi monolayer. We present a comprehensive first-principles study of the energy landscape of the InBi monolayer. We identify a paraelastic phase and three ferroelastic phases and study their topological properties. Specifically, we show that the paraelastic InBi monolayer is a trivial insulator due to the orbital-ordering-induced band inversion occurring between states with the same parity. Substituting one Bi atom per cell with another V-group element (N, P, As) or applying an electric field that breaks the inversion symmetry and changes the orbital onsite energy, the paraelastic InBi monolayer can be driven into the topological insulator phase. Furthermore, one of the ferroelastic phases of pure InBi, which can be obtained by gently straining the paraelastic phase, also possesses such topological insulating properties. These results provide several experimentally accessible routes to tune the nontrivial topology in the InBi monolayer, including creating heterostructures with piezoelectric or ferroelectric substrates and applying mechanical strain, making the InBi monolayer an ideal platform to study the interplay of reduced dimensionality, square-net chemical bonding networks, and band topology.

Topological Hourglass Dirac Semimetal in the Nonpolar Phase of Ag_{2}BiO_{3}

Hourglass-like Nodal Net Semimetal in Ag2BiO3

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Signature of half-metallicity in $\text{BiFeO}_\text{3}$

Dirac semimetal and topological phase transitions in A 3 Bi ( A = Na , K, Rb)

Robust three-dimensional type-II Dirac semimetal state in SrAgBi

Topologically nontrivial phase and tunable Rashba effect in half-oxidized bismuthene

Non-trivial topological phases in transition metal rich half-Heusler Oxides

Massive Dirac fermions and strong Shubnikov–de Haas oscillations in single crystals of the topological insulator Bi 2 Se 3 doped with Sm and Fe

Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals

Controllable Topological Insulator Phases in Litharge-phase InBi Monolayer

Phase Transitions in Three-Dimensional Dirac Semimetal Induced by Off-Resonant Circularly Polarized Light

Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Phase transition of ultrathin Bi2Se3 film sandwiched between ferromagnetic insulators

Switchable band topology and geometric current in sliding bilayer elemental ferroelectric

Intrinsic Ferroelectric Quantum Spin Hall Insulator in Monolayer Na3Bi with Surface Trimerization.

Broken symmetry driven topological semi-metal to gaped phase transitions in SrAgAs

Anomalous lattice contraction and emerging topological phases in Bi-substituted Sm2Ir2O7

Two-dimensional Dirac semiconductor and its material realization