Abstract:We have been developing a kind of micro spectrometer with 64 pixels GaAs-based quantum dots-in-well in double barrier photodetector linear array. The novel photodetector array has a specific inner multiplication at extremely weak illumination environment at low bias voltage. High current gains are achieved and accompanied by extremely low dark currents. The photoelectric response spectrum of the photodetector shows excellent light absorption characteristics from 400nm up to 850nm. Unlike the photon sensitivity of the previous AlGaAs QD-RTD, the QDs photodetector shows high sensitivity to the light irradiation and operating at room temperature. Its current responsivity can reach about 7 × 10 11 A/W when 0.01 picowatts (pW) 633nm light power and -0.5V bias are added. The CTIA readout circuit has been designed to acquire the photocurrent with wide wavelength range under different radiations especially at weak light settings. Two kinds of silicon interposer, namely via-with-one-line and via-with-four-line have been simulated and compared. ADS simulations demonstrate the via-with-four-line silicon interposer is better than via-with-one-line silicon interposer and other interposers such as PCB interposer and ceramic interposers can reduce more crosstalk and suppresses noise. And the response voltage is 7mV and 80μs integration time at 300K. The voltage responsivity has reached about 2.7×10 9 V/W. A high sensitivity spectrometer based on the photodetector array was made and mounted in a microscopy hyperspectral imaging system with optical path switcher. The system has been used to analyze and comparative study the blood smears and biological section.

Single-channel UV/vis dual-band detection with ZnCdS:Mn/ZnS core/shell quantum dots

UV-C-Sensitive Single-Channel Panoramic Detector Via Mn-Doped Quantum Dots Encapsulated in SiO2 Film

Exciton behavior control of high-quality CdSSe/CdS/ZnS quantum dots and its application for ultrasensitive sensing copper ions

Application of ZnCdS:Mn/ZnS Quantum Dots in Silicon-Based Ultraviolet Detectors

Quantum dots enhanced UV response of silicon photodetectors for broadband light detection (Conference Presentation)

Enhancement of near ultraviolet spectral range responsibility of silicon photodetectors via additional fluorescent InP/ZnS quantum dots layer

Visible-blind ZnMgO Colloidal Quantum Dot Downconverters expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and enable UV Band Discrimination

Highly DUV to NIR-II responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators

Single-/fused-band Dual-Mode Mid-Infrared Imaging with Colloidal Quantum-Dot Triple-Junctions

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots

Perovskite Quantum Dots Embedded Composite Films Enhancing UV Response of Silicon Photodetectors for Broadband and Solar‐Blind Light Detection

Low-Cost UV-IR Dual Band Detector Using Nonporous ZnO Film Sensitized by PbS Quantum Dots

Assembly and Integration of Optical Sensors Based on Quantum Dots-In-Well in Double-Barrier Photodetector Array

Resonant Cavity-enhanced Colloidal Quantum-dot Dual-band Infrared Photodetectors

Toward Broadband Imaging: Surface Engineered PbS Quantum Dot/Perovskite Composite Integrated Ultrasensitive Photodetectors.

Surface Engineering of Quantum Dots for Remarkably High Detectivity Photodetectors.

Strategy of All-Inorganic Cs3Cu2I5/Si-Core/Shell Nanowire Heterojunction for Stable and Ultraviolet-Enhanced Broadband Photodetectors with Imaging Capability.

Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure

Vis-Infrared Wide-band and Self-powered Photodetectors Base on CuI/MoS 2 Van der Waals Heterostructure

Nano-Oxide-Assisted Si/PbS CQD Heterojunction Photodetectors for Broadband Sensing

Advancements in Dual-Function UV-Visible Light Detection