Solution epitaxy and photoelectric detection performance of halide–oxide perovskite heterojunction

Rong Wu,Jie Tu,Xudong Liu,Xiuqiao Liu,Guoqiang Xi,Jianjun Tian,Linxing Zhang

DOI: https://doi.org/10.1039/d4tc00718b

IF: 6.4

2024-06-06

Journal of Materials Chemistry C

Abstract:All-inorganic halide perovskites have attracted much attention in their applications due to their excellent optoelectronic properties. Here, we report the epitaxial deposition of high-quality CsPbBr 3 perovskite films on ABO 3 single-crystal substrates using a simple one-step solution spin coating method. The gradual optimization of process parameters plays a significant role in inhibiting the Volmer–Weber growth mode, and the improved film plays a major role in improving the photoelectric properties such as improving light absorption and extending the carrier life. Moreover, the dark current can be significantly reduced to a remarkable level of 2.37 × 10 −10 A under stress modulation, while achieving an impressive switching ratio as high as 2.56 × 10 4 and a light detection response of 1.55 A W −1 . Among them, the non-traditional epitaxial lattice matching method also plays a pivotal role in the formation of high-quality films with biaxial strain, and the heterojunction structure behavior of halide–oxide perovskites provides a promising avenue for the formation of high-performance perovskite photodetectors. This simple, fast, and low-cost solution spin coating method expands the horizons for the construction of multifunctional heterojunction optoelectronic devices.

materials science, multidisciplinary,physics, applied