Abstract:Nanoscale devices that utilize oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to conductive, magnetic, and even superconductive functionalities they exhibit. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects and hence are attractive for next-generation data technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of individual oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale electric-field, charge, dipole-moment, and strain distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. The engineered vacancies were used to form quasi-linear quadrupole topological defects. Significant intraband states were found in the unit cell of the engineered vacancies, proposing a meaningful domain-wall conductivity for miniaturized data-storage applications. Reduction of the Ti ion as well as enhanced charging and electric-field concentration were demonstrated near the vacancy. A 3–5% tensile strain was observed at the immediate surrounding unit cells of the vacancies. Engineering individual oxygen vacancies and topological solitons thus offers a platform for predetermining both atomic-scale and global functional properties of device miniaturization in metal oxides.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.1c03623.Large-scale micrographs for images used in the manuscript; TEM-based tomography around individual oxygen vacancy; Ba–Ba distance distribution in a native crystal; spatial domain and domain walls and the corresponding EELS spectra of the entire range that covers the oxidation states of Ba, Ti, and O; DPC-based charge-density calculation; lattice parameters; formation energy of oxygen vacancies at domain walls; charge-density and Bader charge calculation by DFT; electronic band structure calculation for PbTiO3 with an oxygen vacancy; oxygen-vacancy formation at an existing domain wall (PDF)This article has not yet been cited by other publications.

Oxygen vacancy dynamics in monoclinic metallic VO 2 domain structures

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

Engineering Individual Oxygen Vacancies: Domain-Wall Conductivity and Controllable Topological Solitons

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

Evolution of Metallicity in Vanadium Dioxide by Creation of Oxygen Vacancies

Insight into Electronic and Structural Reorganizations for Defect-Induced Vo2 Metal-Insulator Transition

New aspects of size-dependent metal-insulator transition in synthetic single-domain monoclinic vanadium dioxide nanocrystals.

3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ

Dynamics of Anisotropic Oxygen-Ion Migration in Strained Cobaltites

High-strain-induced local modification of the electronic properties of VO$_2$ thin films

Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

Phase Transition Engineering of Vanadium Dioxide Induced by Oxygen Vacancies

Effects of oxygen vacancy and interfacial strain on the metal-insulator transition of VO2 nanobeams

Nanotextured Dynamics of a Light-Induced Phase Transition in VO 2

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

Oxygen Vacancy Dynamics at Room Temperature in Oxide Heterostructures

Electronic structure evolutions driven by oxygen vacancy in SrCoO3−x films

Highly repeatable nanoscale phase coexistence in vanadium dioxide films

Oxygen vacancies: The origin of n-type conductivity in ZnO