Abstract:In this study, we present a wavelength sensor that is capable of distinguishing the spectrum in the range from ultraviolet (UV) to near-infrared (NIR) light. The filterless device is composed of two horizontally stacking PdSe2/20 μm Si/PdSe2 heterojunction photodetectors with a photovoltaic (PV) behavior, which makes it possible for the device to work at 0 bias voltage. Due to the relatively small thickness of Si and the wavelength-dependent absorption coefficient, the two PdSe2/20 μm Si/PdSe2 photodetectors according to theoretical simulation display a sharp contrast in distribution of the photoabsorption rate. As a result, the photocurrents of both photodetectors evolve in completely different ways with increasing wavelengths, leading to a monotonic decrease in the photocurrent ratio from 6800 to 22 when the wavelength gradually increases from 265 to 1050 nm. The corresponding relationship between both the photocurrent ratio and wavelength can be easily described by the monotonic function, which can help to precisely determine the wavelength in the range from 265 to 1050 nm, with an average relative error less than ±1.6%. It is also revealed that by slightly revising the monotonic function, the wavelength in other different temperatures can also be estimated.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c12885.An AFM image of the as-synthesized PdSe2 layer; HRTEM and SAED characterization of the PdSe2 film; XPS spectra of Pd 3d and Se 3d; a single normalized cycle measured at 5 kHz for determining both rise time (τr) and fall time (τf); Boltzmann equation for IPh,1/IPh,2 at different wavelengths; experimental absorption of multilayer PdSe2 films; and details about the ideality factor and ΦB extraction (PDF)This article has not yet been cited by other publications.

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