Abstract:(PEA)2PbBr4/CsPbBr3 vertical SC heterojunctions are first grow by facile low‐cost liquid‐phase epitaxial method based on LTC. Due to the prominent passivation effect of the epitaxial 2D (PEA)2PbBr4 layer on CsPbBr3 SC surface, the (PEA)2PbBr4/CsPbBr3 SC heterojunction detectors display a record‐low detectable limit of 3.05 nGyair s−1 with a high sensitivity of 34 496 μC Gyair−1 cm−2 for 120 keV hard X‐ray detection. Metal halide perovskite (MHP) single crystals have shown great potential for high‐performance X‐ray detection due to their excellent carrier transport properties, tunable optical bandgap, and low‐temperature fabrication process. However, 3D perovskite single crystals suffer from severe ion migration, limiting the stability and sensitivity of X‐ray detectors. Herein, a lowing temperature crystallization (LTC) method for liquid‐phase epitaxial growth of 2D (PEA)2PbBr4 single‐crystal (SC) film on 3D CsPbBr3 substrate is demonstratedand a 2D/3D (PEA)2PbBr4/CsPbBr3 SC heterojunction is successfully constructed. The epitaxial (PEA)2PbBr4 layer shows a pronounced passivation effect on CsPbBr3 SC with a low trap density of 2.27 × 1010 cm−3. As such, the prepared 2D/3D heterojunction X‐ray detector achieves a record‐low detectable dose rate of 3.05 nGyair s−1 and high sensitivity of 34496 μC Gyair−1 cm−2 in 120 keV hard X‐ray detection, with a largely suppressed dark current drift of 2.49 × 10−4 nA cm−1 s−1 V−1. In addition, the heterojunction detector exhibits a self‐driven sensitivity of 44 μC Gyair−1 cm−2 due to its built‐in electric field. This work provides a simple strategy to controllable construct 2D/3D MHP SC heterojunction with excellent optoelectronic characteristic, which is conducive to promoting the development of MHP SC X‐ray detectors and other optoelectronic devices.

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