Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Structural Modulation and BC8 Enrichment of Silicon via Dynamic Decompression

Structural Modulation and BC8 Enrichment of Silicon via Dynamic Decompression

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Metastable C-centered Orthorhombic Si8and Ge8

A New Metastable Metallic Silicon Allotrope

A Review on Metastable Silicon Allotropes

Crystalline-amorphization-recrystallization Structural Transition and Emergent Superconductivity in Van Der Waals Semiconductor SiP under Compression

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Temperature- and Rate-Dependent Pathways in Formation of Metastable Silicon Phases under Rapid Decompression

Multiple structural phase transitions in single crystal silicon subjected to dynamic loading

Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

In Situ Tem Study of Deformation-Induced Crystalline-To-Amorphous Transition in Silicon

Boron‐dependent Microstructural Evolution, Thermal Stability, and Crystallization of Mechanical Alloying Derived SiBCN

Crystal Structures of Silicon-Rich Lithium Silicides at High Pressure

Topological Luttinger semimetallic phase accompanied with surface states realized in silicon

Reveal the Deformation Mechanism of (110) Silicon from Cryogenic Temperature to Elevated Temperature by Molecular Dynamics Simulation

Enhanced stability and tunable optoelectronic properties of silicon-carbon monolayer by strain and surface functionalization

Unveiling structural features and mechanical properties of amorphous Si2BC3N by density functional theory

Significant phase-space-driven thermal transport suppression in BC8 silicon